TRANSISTOR 2335 Search Results

TRANSISTOR 2335 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 2335 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
j350 TRANSISTOR Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MHT1006N Rev. 0, 5/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.	Original	MHT1006N MHT1006NT1 j350 TRANSISTOR	PDF
TRANSISTOR J477 Abstract: J890 Text: Document Number: AFT23S170−13S Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.	Original	AFT23S170â 13SR3 TRANSISTOR J477 J890	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.	Original	AFT27S006N AFT27S006NT1	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.	Original	AFT27S010N AFT27S010NT1	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.	Original	AFT27S006N AFT27S006NT1	PDF
j292 Abstract: aft23h200-4s2l Text: Document Number: AFT23H200−4S2L Rev. 1, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET AFT23H200−4S2LR6 This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of	Original	AFT23H200-4S2L AFT23H200-4S2LR6 j292	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.	Original	AFT27S006N AFT27S006NT1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.	Original	AFT27S010N AFT27S010NT1	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
transistor c 2335 Abstract: TP2335 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP 2335 The RF Line VHF Power Transistor 35 W — 175 MHz VHF POWER TRANSISTOR NPN SILICON The TP2335 device is in ten d e d fo r use in VHF tra n s m itte r o u tp u t stages w h e re high gain is desired. Use o f g o ld m e ta llizatio n and d iffu se d e m itte r balla st resistors result in enhanced re li	OCR Scan	TP2335 transistor c 2335	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF

A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF
Untitled Abstract: No abstract text available Text: SIEMENS PNP Silicon Transistor SMBTA 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 70 s2C Q62702-M0003	OCR Scan	Q62702-M0003 OT-23 235b05	PDF
MT1115 Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir	OCR Scan	108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117	PDF
2SK680A Abstract: TC-7831B Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 S K 6 8 0 A N-CHANIMEL MOS FET FOR HIGH SPÈED SWITCHING	OCR Scan	2SK680A 2SK680A, 2SK680A TC-7831B	PDF
TC-7831B Abstract: 2335A 2SK680A Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 S K 6 8 0 A N-CHANIMEL MOS FET FOR HIGH SPÈED SWITCHING The 2SK680A, N-channel vertical type MOS FET , is a switching PACKAGE DIMENSIONS Unit : mm device which can be driven directly by the output of ICs having a 5 V	OCR Scan	2SK680A 2SK680A, TC-7831B 2335A 2SK680A	PDF
m5009 Abstract: pnp high emitter base voltage 15 volt 2N5009 2N5330 2N5006 2N5007 2N5008 E131 E134 SFT8200 Text: SOLID STATE DEVICES INC \|fl3bb011 0002130 h \| 1EE D T - ^3 -X3 2N5007 AND 2 N5009 10 AMP HIGH SPEED PNP TRANSISTOR 100 VOLTS CASE STYLE T JEDEC TO—61 ALL TERMINALS ISOLATED FROM CASE s S a S I E r l l 14830 Valley View Avenue La Mirada, California 90638	OCR Scan	fl3bb011 2N5007 M5009 2N5006 2N5008 pnp high emitter base voltage 15 volt 2N5009 2N5330 2N5007 2N5008 E131 E134 SFT8200	PDF
Untitled Abstract: No abstract text available Text: SOLID STATE DEVICES I N C 1 5 E D\|fl3bb011 0002132 T \| P relim in ary Data S h eet SFT8200 10 AMP SM RADIATION TOLERANT PNP TRANSISTOR 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396 100 VOLTS CASE STYLE W	OCR Scan	fl3bb011 SFT8200 150MHz 150ns	PDF
logos 4012B Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX	OCR Scan	TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485	PDF
2SC2322 Abstract: 2SA1002 2SA1009 2SA10 2SA1009/A 2SA1007 2SA101 Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	2SA10] h-17dB, 800MHz) 200MHz) 2SC2322 2SA1002 2SA1009 2SA10 2SA1009/A 2SA1007 2SA101	PDF

TRANSISTOR 2335 Search Results

TRANSISTOR 2335 Result Highlights (5)

TRANSISTOR 2335 Datasheets Context Search

j350 TRANSISTOR

TRANSISTOR J477

Untitled

Untitled

Untitled

j292

Untitled

Untitled

2sb504

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

transistor c 2335

Transistor 2SA 2SB 2SC 2SD

A5 GNE mosfet

Motorola transistors MRF 947

Untitled

MT1115

2SK680A

TC-7831B

m5009

Untitled

logos 4012B

2SC2322