TRANSISTOR 228 T3 Search Results

TRANSISTOR 228 T3 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR 228 T3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K 3115 Abstract: RF tuner 900MHz samsung IMTIA 400M KSC2759 k 4145 transistor npn 200w k 4145 Text: SAMSUNG SEMICONDUCTOR INC KSC2759 mE \| ?*ibq;me OOOt'iSb S \| NPN EPITAXIAL SILICON TRANSISTOR T-31-15 MIXER, OSCILLATOR FOR UHF TUNER SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Unit 30 14 3 50 150 150 -5 5 - 1 5 0 V Symbol CoBector-Base Voltage	OCR Scan	KSC2759 T-31-15 OT-23 Vc8-15V, Vce-10V, Vet-10V KSC2759 900MHz, K 3115 RF tuner 900MHz samsung IMTIA 400M k 4145 transistor npn 200w k 4145	PDF
KSD5005 Abstract: KSD5006 L-500 NPN Triple Diffused Planar Silicon Transistor samsung tv FC4A Text: SAMSUNG SEMICONDUCTOR 14E INC D I 7^4145 0a07bS0 fl KSD5005 T-33 COLOR TV HORIZONTAL' OUTPUT APPLICATIONS TO-3P HIQH Collector-Base Voltage Vc*o=1500V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Colleotor-Emltter Voltage Emitter-Base Voltage'	OCR Scan	KSD5005 71k4iq2 a007bS0 KSD5006 L-500 KSD5005 KSD5006 NPN Triple Diffused Planar Silicon Transistor samsung tv FC4A	PDF
Philips KS 40 Temperature Control Abstract: BUZ80 transistor Ip BUZ80 transistor BUZ80 T-39-U T0220AB transistor 2TH Text: PowerMOS transistor N AMER PH IL IP S / D I SC RE T E BUZ80 GbE D m bfaSB'm 0014S4E . 7 • T-2Î-W May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ80 0014S4E T0220AB; Philips KS 40 Temperature Control BUZ80 transistor Ip BUZ80 transistor BUZ80 T-39-U T0220AB transistor 2TH	PDF
BUK444-400B Abstract: No abstract text available Text: N AMER PHIL IPS/DISCR ETE LTE D • LbS3T31 QQ30S30 Obi ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a lastic full-pack envelope, he device Is intended for use in	OCR Scan	GQ30S3D BUK444-400B OT186	PDF
transistor abe 438 Abstract: sti 7110 F103G marking 33a on semiconductor microwave transistor 03 npn power amplifier circuit NPN Silicon Epitaxial Planar Transistor MX1011B400W FO-91 TRANSISTOR package FO-91 Text: “7 — 3 3 -/5 ' Prelim inary specification Philips Sem iconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL MX1011B400W 5bE J> 711Qfl2b 00Mb3b2 'ISb « P H I N FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium	OCR Scan	-T-33-AS' MX1011B400W 711Qfl2b 00Mb3b2 us/10% FO-91B 03GHz. MCU133 711002b transistor abe 438 sti 7110 F103G marking 33a on semiconductor microwave transistor 03 npn power amplifier circuit NPN Silicon Epitaxial Planar Transistor MX1011B400W FO-91 TRANSISTOR package FO-91	PDF
Untitled Abstract: No abstract text available Text: PowerMOS transistor_ BUZ80 N AMER PHILIPS/DISCRETE ObE D • bbSBTai 001454E 7 ■ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ80 001454E BUZ80_ bbS3T31 T-39-11	PDF
Untitled Abstract: No abstract text available Text: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53131 0D50445 BUK453-50A BUK453-50B BUK453 inK453-50A T-39-n	PDF
Untitled Abstract: No abstract text available Text: PHILIPS INTERNATIONAL SbE D • 7110fiEb 00442^0 ÜSS « P H I N Philips Components Data sheet status Product specification date of issue March 1991 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.	OCR Scan	7110fiEb BUK446 -1000A -1000B BUK446-1000A/B 7110fl2b	PDF
BUK453-50B Abstract: 1B05 BUK453-50A 1B-05 T0220AB D0504 buk453 bfa53 Text: N AUER P H I L I P S / D I S C R E T E 25E D • bbSBTBl 0020445 b PowerMOS transistor BUK453-50A BUK453-50B T-3^-}\| GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bfa53T31 0G20445 BUK453-50A BUK453-50B BUK453 ID/100 1B05 1B-05 T0220AB D0504 bfa53	PDF
transistor 13007 Abstract: 13007 TRANSISTOR transistor E 13007 D 13007 K D 13007 K transistor 13006 TRANSISTOR j 13007 TRANSISTOR 13007 transistor m 13007 ballast 13007 TRANSISTOR Text: TELEFUNKEN ELECTRONIC 17E D • ô'îSOO'îb D D D % 4 3 T ■ ALÛG TE 13006 * TE 13007 9electronic Cr««ifv«l«chno<ogws T- 33-13 Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique	OCR Scan	15A3DIN transistor 13007 13007 TRANSISTOR transistor E 13007 D 13007 K D 13007 K transistor 13006 TRANSISTOR j 13007 TRANSISTOR 13007 transistor m 13007 ballast 13007 TRANSISTOR	PDF
AT-01610 Abstract: avantek AVANTEK transistor AT016 Text: AVANTEK Q INC 5DE a v a n tek D • 1141%h QOGbMSG □ AT-01610 Up to 4 GHz General Purpose* Silicon Bipolar Transistor * Avantek 100 mil Package Features • 22.0 dBm typical Pi ¿b at 2.0 GHz • 9.5 dB typical Gi dB at 2.0 GHz • High Galn-Bandwldth Product: 7.0 GHz typical fr	OCR Scan	AT-01610 AT-01610 avantek AVANTEK transistor AT016	PDF
Transistor B C 458 Abstract: No abstract text available Text: MO T OR OL A SC XSTRS/R F 15E D j b3fc,7SSM GüaS2flS 1 \| T - 3 3 - 0 7 MOTOROLA T-33-17 S E M IC O N D U C T O R TECHNICAL DATA NPN M JD340 H ig h V o l t a g e P o w e r T r a n s is t o r s PNP M JD350 D P A K For Surface M o u n t A pp licatio n s Designed fo r line operated audio ou tput am plifier, switchm ode power supply	OCR Scan	T-33-17 JD340 JD350 MJE340 MJE350 89A-04 MJD340-1) Transistor B C 458	PDF
234 optocoupler Abstract: SOT230 Text: Product specification Philips Sem iconductors High-voltage optocoupier CNX62A FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of AC and DC Insulation 3750 V (RMS and	OCR Scan	CNX62A CNX62A OT230 OT230 BS415 BS7002 234 optocoupler SOT230	PDF
te 2443 MOTOROLA transistor Abstract: 2443 MOTOROLA transistor 2N5344 transistor te 2443 EISA sc 107 transistor 80373 K/te 2443 MOTOROLA transistor Text: TTü T O K O L A XL 6367254 iX^IK^/K ’TE r> MOTOROLA SÇ_ X S T R S / R F bdb i’eii 4 uuaudr’u □ 96 D 80370 . D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE POWER PNP SILICON TRANSISTOR 1 AMPERE . . . designed for high-voltage switching and amplifier applications.	OCR Scan	O-213AA te 2443 MOTOROLA transistor 2443 MOTOROLA transistor 2N5344 transistor te 2443 EISA sc 107 transistor 80373 K/te 2443 MOTOROLA transistor	PDF

2N5430 MOTOROLA Abstract: 2443 MOTOROLA transistor IC CD 3102 2N5430 2N5428 Text: MOTOROLA SC XSTRS/R 1HE F D § b3b?ES4 GDflMSMb 1 \| MOTOROLA 2N5428 TECHNICAL DATA 2N5430 SEMICONDUCTOR thru 7 AM PERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage —	OCR Scan	2N5428 2N5430 O-213AA C01LECT0R-EMITTER 2N5430 MOTOROLA 2443 MOTOROLA transistor IC CD 3102 2N5430 2N5428	PDF
AVANTEK transistor Abstract: lm 3907 Avantek UA-152 Text: AVANTEK INC Q a v a 2QE D n t e • lm iU b OOQbMbQ 3 I AT-41400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip k " P 3 .1 -Z I Avantek Chip Outline Features • • • Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.5 dB typical at 2.0 GHz	OCR Scan	AT-41400 AVANTEK transistor lm 3907 Avantek UA-152	PDF
E 13003 TRANSISTOR Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR Text: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique	OCR Scan	T-33-II 0IN41 I3-75. 15A3DIN E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR	PDF
TRANSISTOR SE 135 Abstract: No abstract text available Text: AVANTEK INC 5DE D • 0A V A N T E K OODfc^SO □ AT-01610 Up to 4 GHz General PurposeSilicon Bipolar Transistor Avantek 100 mil Package Features • 22.0 dBm typical Pi dB at 2.0 GHz • 9.5 d B typical G i dB at 2.0 G Hz • High Galn-Bandw idth Product: 7.0 GHz typical fr	OCR Scan	AT-01610 TRANSISTOR SE 135	PDF
transistor 3904 Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn Text: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.	OCR Scan	OT-23 CMPT491E CMPT591E OT-23 OT-223 CMPTA46 CMPTA96 CZTA46 CZTA96 transistor 3904 transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn	PDF
PHILIPS MOSFET MARKING Abstract: BF998R UBB087 Text: 00E3tM3 474 • Philips Semiconductors Data sheet status Product specification date of issue O ctob e r 1990 FEATURES • Short channel transistor with high ratio lYfs \|/C S. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor	OCR Scan	00Z3fc BF998R OT143R PHILIPS MOSFET MARKING UBB087	PDF
TEA2117 Abstract: No abstract text available Text: S G S - T H O M S O N TEA2117 Hi ¥^ s Rf©S HORIZONTALAND VERTICAL DEFLECTION MONITOR • DIRECT FRAME YOKE DRIVE ± 1.5A DRIV ING CURRENT ■ LINE DARLINGTON DRIVING CAPABILITY ■ BUILT-IN FRAME SEPARATOR WITHOUT EXTERNAL COMPONENTS ■ INTEGRATED FLYBACK GENERATOR	OCR Scan	TEA2117 15kHz 100kHz 120Hz TDA2117 TEA2117 00Sfl42b 00SfiM2fi	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the	OCR Scan	2SC4570 2SC4570 SC-70) 4570-T PACK878	PDF
ESM2030DF Abstract: ESM2030DV BYT11 S125 ESM2 T100C SGS Text: 3QE D m 7 cJ5ciS37 QQ3G42b 4 SGS-THOMSON HLKgTMKS ESM2030DF ESM2030DV S G s-thomson 1 *3 3 -3 5 NPN DARLINGTON POWER MODULE l • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rm JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE	OCR Scan	QQ3G42b ESM2030DF ESM2030DV ESM2030DV T-91-20 O-240) ESM2030DF BYT11 S125 ESM2 T100C SGS	PDF
NHE313 Abstract: nicera Text: ＩＩｎｎＳＳｂｂ TTyyppee H Haalll EElleem meenntt MODEL ＮＨＥ３１３ Features ◆ Absolute Maximum Ratings ◆ This is a high sensitivity type of Nicera Hall element using evaporated InSb Symbol Limit Unit film. Max. Input Current Item Icmax	Original		PDF

TRANSISTOR 228 T3 Search Results

TRANSISTOR 228 T3 Result Highlights (5)

TRANSISTOR 228 T3 Datasheets Context Search

K 3115

KSD5005

Philips KS 40 Temperature Control

BUK444-400B

transistor abe 438

Untitled

Untitled

Untitled

BUK453-50B

transistor 13007

AT-01610

Transistor B C 458

234 optocoupler

te 2443 MOTOROLA transistor

2N5430 MOTOROLA

AVANTEK transistor

E 13003 TRANSISTOR

TRANSISTOR SE 135

transistor 3904

PHILIPS MOSFET MARKING

TEA2117

Untitled

ESM2030DF

NHE313