transistor 2201
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 May 31 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION
|
Original
|
PDF
|
M3D427
BLF2048
BLF2048
OT539A
125108/00/01/pp8
transistor 2201
|
Capacitor Tantal SMD
Abstract: capacitor 0,1 k 250 mkt philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Jul 14 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION
|
Original
|
PDF
|
M3D427
BLF2048
OT539A)
125108/00/01/pp11
Capacitor Tantal SMD
capacitor 0,1 k 250 mkt philips
|
Capacitor Tantal SMD
Abstract: Tantal SMD transistor SMD 2201
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Oct 18 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION
|
Original
|
PDF
|
M3D427
BLF2048
OT539A)
125108/00/01/pp12
Capacitor Tantal SMD
Tantal SMD
transistor SMD 2201
|
NTC 220-11
Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,
|
Original
|
PDF
|
transisto25-735.
NTC 220-11
PHILIPS TRANSMITTING BIPOLAR
Philips Semiconductors Small-signal Transistors Selection guide
|
Carlo Gavazzi G2120
Abstract: dupline carlo gavazzi module 2120 transistor 2120 Carlo Gavazzi CHANNEL GENERATOR dupline 128 G21205502 i3 2120
Text: Input-Module for Elevators Type G 2120 5501 700, G 2120 5502 700 Du line Fieldbus Installationbus • 8-channel transmitter • 8 contact or NPN transistor inputs G2120 5501 or 8 voltage or PNP transistor inputs (G2120 5502) • Open printed circuit board
|
Original
|
PDF
|
G2120
8047-bracket
Carlo Gavazzi G2120
dupline
carlo gavazzi module 2120
transistor 2120
Carlo Gavazzi CHANNEL GENERATOR
dupline 128
G21205502
i3 2120
|
9635
Abstract: sige hbt TARF2201 wideband linear amplifier Tx SiGe MMIC
Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2201 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2201 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
|
Original
|
PDF
|
TARF2201
50-ohm
TAHB09)
30GHz
TARF2201
12dBm
900MHz
OT343
9635
sige hbt
wideband linear amplifier
Tx SiGe MMIC
|
TRANSISTOR SUBSTITUTION
Abstract: tba 2003 capacitor j4 22010 TRANSISTOR SUBSTITUTION DATA BOOK 08051C222MAT2A 12061C104MAT2A CRF-22010 CRF-22010-TB RO4003
Text: CRF-22010-TB Evaluation Board for CRF-22010 Version A Narrowband Features • • • • • • Ready-to-Go RF Amplifier Requires Two Power Supplies Externally Adjustable Gate Bias Voltage Solderless Transistor Changeout Includes Heat Sink, Fan, and Wiring Harness
|
Original
|
PDF
|
CRF-22010-TB
CRF-22010
CRF-22010-TB-A
CRF-22010
TRANSISTOR SUBSTITUTION
tba 2003
capacitor j4
22010
TRANSISTOR SUBSTITUTION DATA BOOK
08051C222MAT2A
12061C104MAT2A
CRF-22010-TB
RO4003
|
HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
|
Original
|
PDF
|
|
nielinger
Abstract: Fleischmann chebyshev mtt siemens heft MAR 735 mosfet pp Siemens MTT philips 1968 MOSFET dynamic
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 6 6.1 References 4. Hilberg, W., ‘Einige grundsätzliche Betrachtungen zu Breitband-Übertragern’, NTZ, 1966, Heft 9, pp. 527-538. REFERENCES References in the main text
|
Original
|
PDF
|
|
transistor 2201
Abstract: SRA2201M 3001 pnp
Text: SRA2201M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
SRA2201M
O-92M
KSR-I011-000
-10mA
-10mA,
transistor 2201
SRA2201M
3001 pnp
|
Untitled
Abstract: No abstract text available
Text: SRA2201M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
SRA2201M
O-92M
KSR-I011-O
KSR-I011-001
|
transistor 2201
Abstract: No abstract text available
Text: SRA2201M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
SRA2201M
SRA2201M
O-92M
KSR-I011-002
KSR-I011-002
transistor 2201
|
SRA2201M
Abstract: transistor 2201
Text: SRA2201M PNP Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and
|
Original
|
PDF
|
SRA2201M
O-92M
KSD-R0B012-000
SRA2201M
transistor 2201
|
TRANSISTOR C802
Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS
|
Original
|
PDF
|
PTFA220121M
PTFA220121M
12-watt
PG-SON-10
TRANSISTOR C802
LM7805 c SMD
V4 MARKING
p 4712
transistor c803
atc100a200jw
|
|
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
PDF
|
|
XR-2203
Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Text: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil icon NPN Darlington pairs on a single monolithic sub
|
OCR Scan
|
PDF
|
XR-220172/3/4
XR-2201,
XR-2202,
XR-2203,
XR-2204
500mA
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
XR-2203
XR-2203CP
XR2203CP
XR2204CP
2203CP
XR-2202
2204cp
XR2203
XR2204
|
Untitled
Abstract: No abstract text available
Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for
|
OCR Scan
|
PDF
|
23SbOS
|
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
|
OCR Scan
|
PDF
|
2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
|
A751
Abstract: DIN 41872 BU205
Text: 5SC D • fl23SbOS Q004Ô3Ô 3 ■ SIE6 r - 3 3- o 7 NPN Silicon Power Transistor BU 205 O' SIEMENS A K T I E N G E S E L L S C H A F 34838 BU 205 is a triple diffused silicon NPN power switching transistor in a TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength. It is
|
OCR Scan
|
PDF
|
fl23SbOS
68000-A751
C--12
A751
DIN 41872
BU205
|
Q68000-A751
Abstract: TO115 BU205
Text: 5SC D • fl23SbOS Q004Ô3Ô 3 ■ SIE6 r - 3 3- o 7 NPN Silicon Power Transistor SIEMENS BU 205 A K T I E N G E S E L L S C H A F 34838 BU 205 is a triple diffused silicon NPN power switching transistor in a TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength. It is
|
OCR Scan
|
PDF
|
fl23SbOS
AKTIENGESELLSCHAFD4838
Q68000-A751
Q68000-A751
TO115
BU205
|
Untitled
Abstract: No abstract text available
Text: TLP130 GaAs IRED a PHOTO-TRANSISTOR PR OGR A M M A B L E C ONT ROL LER S AC / D C - I N P U T MODULE TELECOMMUNICATION 'Hie T O S H I B A MINI FLAT C O U P L E R T L P 1 3 0 is a s m l l o u t l i n e coupler, suitable for surface mo u n t assembly. TLP130 consists of a photo transistor, opt i c a l l y
|
OCR Scan
|
PDF
|
TLP130
TLP130
|
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
|
OCR Scan
|
PDF
|
|
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
|
OCR Scan
|
PDF
|
CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
|
Untitled
Abstract: No abstract text available
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The Digital Signal Processor DSP is fabricated using high-density Complementary Metal Oxide Semiconductor (CMOS) with Transistor-TransistorLogic (TTL) compatible inputs and outputs. This section covers the maximum ratings, thermal characteristics, and electrical characteristics of the DSP96002.
|
OCR Scan
|
PDF
|
DSP96002.
DSP96002/D,
G14fl47b
|
