Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR RT1N430C TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING M itsubishi RT1N430C is a one chip transistor w ith built-in bias resistor, unibmm PNP type is RT1P430C.
|
OCR Scan
|
RT1N430C
RT1N430C
RT1P430C.
SC-59
O-236
-10mA
|
PDF
|
MP-25
Abstract: NP80N04CHE NP80N04DHE NP80N04EHE
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N04CHE, NP80N04DHE, NP80N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.
|
Original
|
NP80N04CHE,
NP80N04DHE,
NP80N04EHE
O-220AB
O-262
NP80N04DHE
NP80N04CHE
O-263
MP-25
NP80N04CHE
NP80N04DHE
NP80N04EHE
|
PDF
|
utc 2030
Abstract: marking 2G MMBTA55 MMBTA56 MMBTA56-AE3-R MMBTA56L MMBTA56L-AE3-R 4 1020 transistor
Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 1 2 SOT-23 *Pb-free plating product number: MMBTA56L ORDERING INFORMATION Order Number Normal
|
Original
|
MMBTA56
350mW
OT-23
MMBTA56L
MMBTA56-AE3-R
MMBTA56L-AE3-R
QW-R206-090
utc 2030
marking 2G
MMBTA55
MMBTA56
MMBTA56-AE3-R
MMBTA56L
MMBTA56L-AE3-R
4 1020 transistor
|
PDF
|
2SC1275
Abstract: 2sc1927
Text: DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION in millimeters consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN.
|
Original
|
2SC1927
2SC1275,
2SC1927
2SC1275
|
PDF
|
UTC MMBTA56
Abstract: utc 2030 MMBTA56L-AE3-R MMBTA55 MMBTA56 090 B
Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 1 2 SOT-23 ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMBTA56L-AE3-R
|
Original
|
MMBTA56
350mW
OT-23
MMBTA56L-AE3-R
MMBTA56G-AE3-R
QW-R206-090
UTC MMBTA56
utc 2030
MMBTA56L-AE3-R
MMBTA55
MMBTA56
090 B
|
PDF
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO= -80V * Collector Dissipation: PD=350mW 2 1 SOT-23 JEDEC TO-236 ORDERING INFORMATION Ordering Number Note: MMBTA56G-AE3-R
|
Original
|
MMBTA56
350mW
OT-23
O-236)
MMBTA56G-AE3-R
QW-R206-090
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR tiEM'iñe'J 0017bfi0 Mbl NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATU RES
|
OCR Scan
|
0017bfi0
2SC3241
30MHz,
15-j1
2SC3241
|
PDF
|
marking mitsubishi
Abstract: oc pnp sc62
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1948 FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1948 is a resin sealed silicon PNP epitaxial type transistor. It is OUTLINE DRAWING unit mm designed with high voltage, high hFe and high fr.
|
OCR Scan
|
2SA1948
2SA1948
2SC5213.
200MHz
500mW
SC-62
270Hz
X10-4
marking mitsubishi
oc pnp sc62
|
PDF
|
2sc4624
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W
|
OCR Scan
|
2SC4624
2SC4624
900MHz.
800-900MHz
900MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W
|
OCR Scan
|
2SC4624
2SC4624
900MHz.
800-900MHz
900MHz
|
PDF
|
transistor k 4212 fet
Abstract: Silicon Bipolar Transistor Hewlett-Packard transistor k 4212
Text: Transistor Chip Use Application Note A005 Part I. Assembly Considerations 1.0 Chip Packaging for Shipment 1.1 General Hewlett-Packard transistor chips are shipped in chip carriers with a clear or black elastomer as a carrier medium. There are up to 100 chips
|
Original
|
5091-8802E
5968-3242E
transistor k 4212 fet
Silicon Bipolar Transistor Hewlett-Packard
transistor k 4212
|
PDF
|
transistor eb 2030
Abstract: transistor 2030 2SC5209 oc pnp sc62
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1944 FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1944 is a silicon PNP epitaxial type transistor. It is designed with OUTLINE DRAWING Unit m high voltage, high collector current and high hFE.
|
OCR Scan
|
2SA1944
2SA1944
2SC5209.
-500mA
-10mA)
SC-62
transistor eb 2030
transistor 2030
2SC5209
oc pnp sc62
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
|
Original
|
AFT27S006N
AFT27S006NT1
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
|
Original
|
AFT27S006N
AFT27S006NT1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
|
Original
|
AFT27S006N
AFT27S006NT1
|
PDF
|
2SA904A
Abstract: 2SA904 cl 100 hie hre hfe
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA904A FOR LOW FREQUENCY VOLTAGE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA904A is a silicon PNP epitaxial type high voltage transistor OUTLINE DRAWING Unitrmm ¿5.6MAX designed for low frequency voltage amplify application of small signal. Due to
|
OCR Scan
|
2SA904A
2SA904A
-120V
150MHz
270Hz
X10-3
2SA904
cl 100 hie hre hfe
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
|
Original
|
AFT27S010N
AFT27S010NT1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: m NBΠX KD324515HB Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ tl- B G t3 Dual Darlington Transistor Module 150 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex High-Beta Dual Darlington Transistor Modules are
|
OCR Scan
|
KD324515HB
Amperes/600
|
PDF
|
transistor eb 2030
Abstract: 2SA1285 Tone Control amp OC120
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1285, 2SA1285A FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SA1285, 2SA1285A is a silicon PN P epitaxial type transistor. ¿5 .1 M A X Designed with high voltage, high hFE, high fr, small Cob and excellent hFE
|
OCR Scan
|
2SA1285,
2SA1285A
2SA1285A
2SC3245,
2SC3245A.
200MHz,
900mW
270Hz
270Hz
transistor eb 2030
2SA1285
Tone Control amp
OC120
|
PDF
|
LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
|
PDF
|
IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
|
PDF
|
1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
|
PDF
|
2SC5125
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,
|
OCR Scan
|
2SC5125
2SC5125
175MHz,
175MHz
|
PDF
|
