2SC5125 Search Results

2SC5125 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
2SC5125		Mitsubishi	NPN EPITAXIAL PLANAR TYPE		Scan	PDF
2SC5125		Mitsubishi	MITSUBISHI RF POWER TRANSISTOR		Scan	PDF

2SC5125 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	PDF	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
2SC5125 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,	OCR Scan	PDF	2SC5125 2SC5125 175MHz, 175MHz
2SC5125 Abstract: air variable capacitor transistor 5d mica capacitor metal clad mica capacitor T-40E Text: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial. planar type transistor OUTLINE DRAWING Dimension in mm specifically designed for high power amplifiers in VHF band. R1 FEATURES • High power output and high gain : Po 2 80W, Gpe S 7.2dB,	OCR Scan	PDF	2SC5125 2SC5125 175MHz, Tc-25^ 175MHz air variable capacitor transistor 5d mica capacitor metal clad mica capacitor T-40E
2SC5125 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,	OCR Scan	PDF	2SC5125 2SC5125 175MHz, 175MHz
2sc2538 Abstract: hpa b 110 2SC2S39 2SC5125 2sc4624 2SC2094 Text: 150MHz B and 13.5V S eries fo r M obile Radios <Tc = 25C> Max. ratings Application 2SC20S3 HPA S ,NPN,EP VM ° 40 2SC1970 HPA S ,NPN,EP 40 2SC730 3K V Structure •' - 0.3 4 0.6 & Rttv-c 5 + 150 25 fc /w 0.61 + 135 183 w 4 Pç W) Ve (min) {%) {«ax) i* A )	OCR Scan	PDF	150MHz 2SC20S3 2SC1970 2SC730 2SC1947 2SC197Í 2SC2237 2SC1972 2SC2094 2SC1729 2sc2538 hpa b 110 2SC2S39 2SC5125 2sc4624