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    TRANSISTOR 20 DB 2400 MHZ Search Results

    TRANSISTOR 20 DB 2400 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 20 DB 2400 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-100; BLF7G24LS-100 IS-95 ACPR885k BLF7G24L-100 7G24LS-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-100; BLF7G24LS-100 ACPR885k IS-95 IS-95 BLF7G24L-100 7G24LS-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 3 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-100; BLF7G24LS-100 IS-95 ACPR885k BLF7G24L-100 7G24LS-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-140; BLF7G24LS-140 ACPR885k IS-95 IS-95 BLF7G24L-140 7G24LS-140 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-140; BLF7G24LS-140 IS-95 ACPR885k BLF7G24L-140 7G24LS-140 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-140; BLF7G24LS-140 IS-95 ACPR885k BLF7G24L-140 7G24LS-140 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L100; BLF2425M7LS100 Power LDMOS transistor Rev. 1 — 6 December 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF2425M7L100; BLF2425M7LS100 ACPR885k IS-95 IS-95 BLF2425M7L100 2425M7LS100 PDF

    j350 TRANSISTOR

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHT1006N Rev. 0, 5/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.


    Original     		MHT1006N MHT1006NT1 j350 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF8G22LS-270 Power LDMOS transistor Rev. 3 — 20 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		BLF8G22LS-270 PDF

    smd transistor 2300

    Abstract: BLF7G24LS-160P 2300 TRANSISTOR REPLACEMENT table for transistor
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 3 — 20 April 2012 Preliminary data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P smd transistor 2300 BLF7G24LS-160P 2300 TRANSISTOR REPLACEMENT table for transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance


    Original     		BLF7G27L-75P; BLF7G27LS-75P IS-95 ACPR885k IS-95 BLF7G27L-75P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF8G24LS-200PN Power LDMOS transistor Rev. 1 — 20 January 2014 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF8G24LS-200PN PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance


    Original     		BLF7G27L-75P; BLF7G27LS-75P IS-95 ACPR885k IS-95 BLF7G27L-75P PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		AFT27S006N AFT27S006NT1 PDF

    Application Notes on LM7805

    Abstract: lm7805 lm7805 p PCC104BCTND PCC104bct-nd ATC 4r7 capacitor 100b LM7805 05 PTF240101S BCP56 ceramic capacitor 47 pf
    Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PTF240101S PTF240101S 10-watt, CDMA2000 Application Notes on LM7805 lm7805 lm7805 p PCC104BCTND PCC104bct-nd ATC 4r7 capacitor 100b LM7805 05 BCP56 ceramic capacitor 47 pf PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 4 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P PDF

    smd transistor 2300

    Abstract: No abstract text available
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 2 — 1 March 2012 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P smd transistor 2300 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 4 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF8G22LS-270 Power LDMOS transistor Rev. 2 — 3 December 2012 Preliminary data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		BLF8G22LS-270 PDF

    smd transistor 2300

    Abstract: No abstract text available
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 5 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P smd transistor 2300 PDF

    LM7805

    Abstract: PCC104BCTND PCC104bct-nd H-32259-2 rf transistor 2.5GHz 240101S
    Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PTF240101S PTF240101S 10-watt, CDMA2000 H-32259-2 LM7805 PCC104BCTND PCC104bct-nd H-32259-2 rf transistor 2.5GHz 240101S PDF

    transistor 742

    Abstract: j494 transistor blf8g22ls
    Text: BLF8G22LS-270V; BLF8G22LS-270GV Power LDMOS transistor Rev. 2 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.


    Original     		BLF8G22LS-270V; BLF8G22LS-270GV BLF8G22LS-270V 8G22LS-270GV transistor 742 j494 transistor blf8g22ls PDF

    ECB-101537

    Abstract: ECB1 transistor 20 dB 2400 mhz
    Text: Product Description SGA-2186 DC-5000 MHz Silicon Germanium HBT Cascadeable Gain Block Stanford Microdevices’ SGA-2186 is a high performance cascadeable 50-ohm amplifier designed for operation from a 2.2-volt supply. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    Original     		SGA-2186 50-ohm SGA-2186 DC-5000 EDS-100623 ECB-101537 ECB1 transistor 20 dB 2400 mhz PDF

    TRANSISTOR J477

    Abstract: J890
    Text: Document Number: AFT23S170−13S Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.


    Original     		AFT23S170â 13SR3 TRANSISTOR J477 J890 PDF