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    TRANSISTOR 20 DB 14 GHZ Search Results

    TRANSISTOR 20 DB 14 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 20 DB 14 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 7432

    Abstract: AT 1004 S12 IC 7432 power dissipation NE687 NE699M01 NE699M01-T1 S21E of IC 7432 S12 sot 23-6
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm HIGH fT: 16 GHz TYP at 2 V, 20 mA • LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz


    Original     		PDF NE699M01 NE699M01 NE687) OT363 24-Hour IC 7432 AT 1004 S12 IC 7432 power dissipation NE687 NE699M01-T1 S21E of IC 7432 S12 sot 23-6

    6621 sot-23

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ IS21E NE699M01 NE699M01-T1 S21E 519 510 SOT-363 662 transistor 5555
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 • HIGH fT: 16 GHz TYP TOP VIEW • HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz, VCE = 2 V, Ic = 20 mA


    Original     		PDF NE699M01 NE699M01 OT-363 OT-23 OT143 24-Hour 6621 sot-23 RF NPN POWER TRANSISTOR C 10-12 GHZ IS21E NE699M01-T1 S21E 519 510 SOT-363 662 transistor 5555

    Untitled

    Abstract: No abstract text available
    Text: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4012036-FL T1G4012036-FL

    Untitled

    Abstract: No abstract text available
    Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4012036-FS T1G4012036-FS

    Untitled

    Abstract: No abstract text available
    Text: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G6001528-SG T2G6001528-SG TQGaN25

    Untitled

    Abstract: No abstract text available
    Text: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G6001528-SG T2G6001528-SG TQGaN25

    BFT25A

    Abstract: MCD113 MCD110 RF POWER TRANSISTOR NPN
    Text: BFT25A NPN 5 GHz wideband transistor Rev. 04 — 6 July 2004 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up


    Original     		PDF BFT25A BFT25A MCD113 MCD110 RF POWER TRANSISTOR NPN

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF TGF2819-FS TGF2819-FS

    BFG520

    Abstract: No abstract text available
    Text: BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Rev. 04 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BFG520; BFG520/X; BFG520/XR BFG520XR BFG520

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF TGF2819-FL TGF2819-FL

    MAR 745 TRANSISTOR

    Abstract: BFR505T MRC013 SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Feb 11 2000 Mar 14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505T FEATURES DESCRIPTION • Low current consumption


    Original     		PDF M3D173 BFR505T OT416 SC-75) MBK090 603508/02/pp16 MAR 745 TRANSISTOR BFR505T MRC013 SC-75

    Untitled

    Abstract: No abstract text available
    Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G3000532-SM T1G3000532-SM 30MHz

    BFG540

    Abstract: BFG540X fibreoptical MRA751 PHILIPS BFG540 MRA760
    Text: BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BFG540; BFG540/X; BFG540/XR BFG540 BFG540XR BFG540X fibreoptical MRA751 PHILIPS BFG540 MRA760

    Untitled

    Abstract: No abstract text available
    Text: BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BFG540; BFG540/X; BFG540/XR BFG540 BFG540XR

    bfr520

    Abstract: No abstract text available
    Text: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


    Original     		PDF BFR520 BFR520

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FS T1G4020036-FS

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FL T1G4020036-FL

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


    Original     		PDF BFR520 BFR520

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FL T1G4020036-FL

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FS T1G4020036-FS

    BFT92

    Abstract: BFR92A P2 bft92 die BFR92 BFR92A application note BFR90A BFR92A MSB003
    Text: BFR92A NPN 5 GHz wideband transistor Rev. 04 — 2 March 2009 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BFR92A BFR92A BFT92 BFR92A P2 bft92 die BFR92 BFR92A application note BFR90A MSB003

    NEC 2706

    Abstract: nec 501 t 6229 6pin
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fr • High gain PACKAGE DIMENSIONS in mm 16 G H zT Y P . 2.1 ± 0.1 1.25+0.1 |Szie|2 = 14 dB TYP. @ f = 2 GHz, V ce = 2 V, Ic = 20 mA


    OCR Scan     		PDF 2SC5409 2SC5409-T1 50-pcs NEC 2706 nec 501 t 6229 6pin

    BFG90A

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS 3^31 0031222 13 T Product specification « A P X £ NPN 5 GHz wideband transistor BFG90A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT103 envelope. PIN It is designed for application in


    OCR Scan     		PDF BFG90A OT103 OT103. BFG90A

    Untitled

    Abstract: No abstract text available
    Text: • Philips Semiconductors bb53T31 0055155 757 H A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor DESCRIPTION Product specification b7E J> c BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use In RP wideband amplifiers and


    OCR Scan     		PDF bb53T31 BFR92 BFT92. bbS3131 00B5157 bS3T31 -------------BFR92