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    TRANSISTOR 2.4GHZ Search Results

    TRANSISTOR 2.4GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2.4GHZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFP620 acs

    Abstract: BFP620 s parameters 4ghz
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		BFP620 VPS05605 OT343 -j100 Aug-29-2001 BFP620 acs BFP620 s parameters 4ghz PDF

    H3101B

    Abstract: HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration
    Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		HFA3101 HFA3101 10GHz) FN3663 UPA101 H3101B HFA3101B HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration PDF

    HFA3101

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
    Text: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		HFA3101 HFA3101 10GHz) RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz PDF

    transistor npn c 9012

    Abstract: HFA3101BZ 5GHz band pass filter
    Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		HFA3101 HFA3101 10GHz) FN3663 UPA101 transistor npn c 9012 HFA3101BZ 5GHz band pass filter PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640F BFP640may PDF

    acs sot-343

    Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560
    Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		VPS05605 OT-343 -j100 Dec-22-2000 acs sot-343 spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560 PDF

    marking re

    Abstract: BFP640 BGA420 T-25
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640 OT343 marking re BFP640 BGA420 T-25 PDF

    bfp640

    Abstract: BFP640/F
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640 VPS05605 OT343 bfp640 BFP640/F PDF

    620 sot-343

    Abstract: acs sot-343
    Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		VPS05605 OT-343 -j100 Mar-01-2001 620 sot-343 acs sot-343 PDF

    bfp640f

    Abstract: BFP420F
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640F bfp640f BFP420F PDF

    BFP640E6327

    Abstract: BFP640 noise figure bfp640e R4S BFP640
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640 OT343 726-BFP640E6327 E6327 BFP640E6327 BFP640 noise figure bfp640e R4S BFP640 PDF

    bfp640f

    Abstract: bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640F bfp640f bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz PDF

    R4S BFP640

    Abstract: BFP640 transistor ph 45 v marking r4s
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640 VPS05605 OT343 Aug-16-2004 R4S BFP640 BFP640 transistor ph 45 v marking r4s PDF

    kf 8715

    Abstract: 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96
    Text: HFA3101 Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		HFA3101 HFA3101 10GHz) 10GHz kf 8715 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96 PDF

    4GHZ TRANSISTOR

    Abstract: R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640 OT343 4GHZ TRANSISTOR R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640 PDF

    HFA3101

    Abstract: 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair
    Text: HFA3101 TM Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		HFA3101 HFA3101 10GHz) 10GHz 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair PDF

    BFR740L3RH

    Abstract: BFR705L3RH AN077
    Text: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Extremly small and flat leadless package, 3 height 0.32 mm, ideal for modules 1 2 • Provides outstanding performance for wireless applications up to 10 GHz • Ideal for WLAN applications,


    Original     		BFR740L3RH BFR740L3RH BFR705L3RH AN077 PDF

    ACS 086

    Abstract: germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz
    Text: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		VPS05605 OT-343 -j100 Feb-09-2000 ACS 086 germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz PDF

    germanium transistor ac 128

    Abstract: BFR740L3RH RF NPN POWER TRANSISTOR C 10-12 GHZ BFR705L3RH BFR740L3
    Text: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		BFR740L3RH BFR74 germanium transistor ac 128 BFR740L3RH RF NPN POWER TRANSISTOR C 10-12 GHZ BFR705L3RH BFR740L3 PDF

    bfp740

    Abstract: No abstract text available
    Text: BFP740 NPN Silicon Germanium RF Transistor 3 4 • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		BFP740 VPS05605 OT343 bfp740 PDF

    BFP640 noise figure

    Abstract: s parameters 4ghz
    Text: BFP640 E/L6327 and E/L7764 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		BFP640 E/L6327 E/L7764 L6327 L7764 VPS05605 BFP640 Oct-30-2003 BFP640 noise figure s parameters 4ghz PDF

    BFR740L3RH

    Abstract: BFR705L3RH GMA marking TP 180
    Text: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		BFR740L3RH BFR740L3RH BFR705L3RH GMA marking TP 180 PDF

    germanium transistor ac 128

    Abstract: BFR705L3RH BFR740L3RH WLAN chip
    Text: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 a wide range of wireless applications 1 2 up to 10 GHz and more • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		BFR740L3RH germanium transistor ac 128 BFR705L3RH BFR740L3RH WLAN chip PDF