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    TRANSISTOR 1P3 Search Results

    TRANSISTOR 1P3 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1P3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 0.6um 1P3M Embedded Flat ROM 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V / 5V ƒ Starting Material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical)


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    1P3M

    Abstract: 530 transistor
    Text: 0.6um 1P3M Logic 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V / 5V ƒ Starting Material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical) 145Å


    Original     		PDF

    1P3M

    Abstract: No abstract text available
    Text: 0.5um 1P3M Logic 3.3V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 3.3V / 3.3V ƒ ƒ Starting material Well Structure P-type (100), 9~12 Ω/□ CMOS Twin-well ƒ Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side ƒ Transistor Channel Buried channel PMOS


    Original     		PDF 50um2 1P3M

    Vg 5V

    Abstract: No abstract text available
    Text: 0.5um 1P3M Embedded Flat ROM 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V/5V ƒ Starting material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side ƒ Transistor Channel Buried channel PMOS


    Original     		PDF 50um2 60um2 Vg 5V

    LOCOS

    Abstract: DSASW0024855 1P3M
    Text: 0.5um 1P3M Logic 5V updated in 2005.03.16 Features ƒ Vdd Core/IO 5V/5V ƒ Starting material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical)


    Original     		PDF Descrip-260 50um2 LOCOS DSASW0024855 1P3M

    INTERMETal diode

    Abstract: zener diode BN NMOS transistor 0.18 um CMOS BPSG
    Text: 0.6um 1P3M High Voltage 12V / 12V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,12V/12V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side


    Original     		PDF 2V/12V INTERMETal diode zener diode BN NMOS transistor 0.18 um CMOS BPSG

    NMOS transistor 0.18 um CMOS

    Abstract: 1P3M LOCOS
    Text: 0.6um 1P3M High Voltage 16V / 16V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,16V/16V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side


    Original     		PDF 6V/16V NMOS transistor 0.18 um CMOS 1P3M LOCOS

    Untitled

    Abstract: No abstract text available
    Text: 0.6um 1P3M High Voltage 20V / 5V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V, 20V/5V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Twin-well (Nwell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side


    Original     		PDF

    TRANSISTOR BI 185

    Abstract: transistor bI 340 BI 340 cmos transistor 0.35 um
    Text: 0.6um 1P3M High Voltage 40V / 40V updated in 2005.03.30 Features ƒ Voltage Logic,High Voltage 5V/5V,40V/40V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Quadruple-Well ( Hnwell, Hpwell for HV-Device, Nwell, Pwell for LV-Device ) ƒ


    Original     		PDF 0V/40V TRANSISTOR BI 185 transistor bI 340 BI 340 cmos transistor 0.35 um

    1P3M

    Abstract: No abstract text available
    Text:       0.5um 1P3M Logic 3.3V      Features ! 8 % #  ?-?8?-?8 ! !         !" " ! #$% % %& % '   )*$( +,- $)


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    1P3M

    Abstract: No abstract text available
    Text:       0.6um 1P3M Logic 5V      Features !   *1*1 !        !     !    !    !"#$% 


    Original     		PDF

    1P3M

    Abstract: resistance
    Text:       0.5um 1P3M Logic 5V      Features ! 8 % #  ?8?8 !      !    !" " ! #$% % %& % '   )*$( +,- $) !


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    transistor 778

    Abstract: No abstract text available
    Text:       0. 6um 1P3M Embedded Flat ROM 5V      Features !  ! " ,2,2 !     !     !    !" ! 


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    Untitled

    Abstract: No abstract text available
    Text:       0. 5um 1P3M Embedded Flat ROM 5V      Features ! 8 % #  >8>8 !      !    !" " ! #$% % %& % '   )*$( +,- $)


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    Untitled

    Abstract: No abstract text available
    Text:       0.8um 1P3M High Voltage 40V / 40V      Features !     !         !     ! "#$  " $ %& "' *  +$  $


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    Untitled

    Abstract: No abstract text available
    Text:       0.6um 1P3M High Voltage 16V / 16V      Features !     !        !         ! "!#   


    Original     		PDF

    HTL LOGIC

    Abstract: analog plc sensor wiring diagram LIMIT SWITCH namur application mcr-f-ui-dc Wiring Diagram RPM module Turbine Flow meter Proximity Sensor 4-20 out incremental encoders htl "zero speed" namur magnetic pickup speed sensor
    Text: Programmable Universal Frequency Transducer Data Sheet 1140A April 2000 Features • Completely programmable frequency range from 0.1 Hz…120 kHz programmed using membrane keypad • LCD to display the input or output signals • 3-way isolation of signals ( input, output and power


    Original     		PDF

    CMOS

    Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
    Text: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular


    Original     		PDF FC025 FC025 25-micron CMOS AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    transistor 1p3

    Abstract: BFQ19P MARKING 19S ic MARKING FZ 62702-F1060 F1060 e23s
    Text: 47E D ê23SbGS DDSMMST 7 « S I E 6 7 ^ 3 3 BFQ 19P NPN Silicon RF Transistor - SIEMENS AKTI ENGESELLSCHAF • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S


    OCR Scan     		PDF 23SbGS BFQ19P 62702-F1060 OT-89 D2Hm35 transistor 1p3 MARKING 19S ic MARKING FZ F1060 e23s

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 023b3SQ Q017027 H H S I P NPN Silicon RF Transistor —» 0 1 . 1 7 BFR93P SIEMENS/ SPCLn SEMICONDS ' ' _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF 023b3SQ Q017027 BFR93P OT-23

    DIODE ITT 310

    Abstract: OC70P2 transistor 1p3
    Text: c*o OPTOELECTRONICS |* _ PH O TO TR A N SISTO R O P T IC A L IN T E R R U P T E R S W IT C H ES •Q £ h* .312 7.83 .j (- 1 2 4 (3 151 J-.1P3 ¡2.6) NOM .122(3.10) I T1 C ia p Ù o e r îiii'e Pai s W itt! ' ■/JniU' M u m b i; tm in . ._££>/S e iì a s .,


    OCR Scan     		PDF H21A1 C70P1 C70P2 DIODE ITT 310 OC70P2 transistor 1p3

    transistor 1p3

    Abstract: transistor z3
    Text: DC to 2.4 GHz High 1P3 Active Mixer Preliminary Technical Data FEATURES Double Balanced Gilbert Cell Mixer Conversion Gain: +6dB Input IP3: +18 dBm LO Drive: -10 dBm Noise Figure: 12 dB P1dB: +11 dBm Differential LO, IF and RF Ports 50 . LO Input Impedance


    OCR Scan     		PDF AD8343 AD8343 AD8343_ transistor 1p3 transistor z3