GSC3F-7879
Abstract: SC-1513 LS20023 locosys 1513 ls20022 ls20021 sirf star III 497260 sirf star III settings SiRF Binary Protocol Reference Manual
Text: LOCOSYS Technology Inc. 20F.-13, No.79, Sec. 1, Xintai 5th Rd., Xizhi City, Taipei County 221, Taiwan ℡ 886-2-8698-3698 ¬ 886-2-8698-3699 ßwww.locosystech.com Product name Description LS20020 GPS smart antenna module/USB,9600BPS,30x30mm LS20021 GPS smart antenna module/TTL,9600BPS,30x30mm
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LS20020
9600BPS
30x30mm
LS20021
LS20022
module/RS232
GSC3F-7879
SC-1513
LS20023
locosys 1513
ls20022
ls20021
sirf star III
497260
sirf star III settings
SiRF Binary Protocol Reference Manual
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uN3010
Abstract: LS9548N smd transistor SY locosys GPS antenna nmea 0183 amplifier LS-9548N real id technology smd transistor txa NMEA-0183
Text: LOCOSYS Technology Inc. N 25°03.716’ E 121°38.742’ nt id e Specifications for GPS receiver ia l www.locosystech.com Lo co Sy s Co nf LS9548N 2008 Locosys Technology Inc. All rights reserved. Page 1/11 Preliminary Confidential - Information is subject to change without prior notice.
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LS9548N
LS9548N
uN3010
smd transistor SY
locosys
GPS antenna
nmea 0183 amplifier
LS-9548N
real id technology
smd transistor txa
NMEA-0183
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0.5um 2P3M Mixed Signal 5V
Abstract: 2P3M
Text: 0.5um 2P3M Mixed Signal 5V updated in 2005.03.16 Features Vdd Core/IO 5V/5V Starting material P-type (100), 9~12 Ω/□ Well Structure CMOS Twin-well Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side Transistor Channel Buried channel PMOS
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50um2
0.5um 2P3M Mixed Signal 5V
2P3M
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INTERMETal diode
Abstract: zener diode BN NMOS transistor 0.18 um CMOS BPSG
Text: 0.6um 1P3M High Voltage 12V / 12V updated in 2005.03.29 Features Voltage Logic,High Voltage 5V/5V,12V/12V Starting material P-type (100), 9~12 Ω-cm Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side
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2V/12V
INTERMETal diode
zener diode BN
NMOS transistor 0.18 um CMOS
BPSG
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2P3M
Abstract: 0.6 um cmos process
Text: 0.6um 2P3M Mixed Signal 5V updated in 2005.03.16 Features Vdd Core/IO 5V / 5V Starting Material P-type (100), 9~12 Ω/□ Well Structure CMOS Twin-well Isolation Conventional LOCOS Transistor Channel Buried channel PMOS Gate oxide (Electrical)
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1P3M
Abstract: 530 transistor
Text: 0.6um 1P3M Logic 5V updated in Oct 01, 2004 Features Vdd Core/IO 5V / 5V Starting Material P-type (100), 9~12 Ω/□ Well Structure CMOS Twin-well Isolation Conventional LOCOS Transistor Channel Buried channel PMOS Gate oxide (Electrical) 145Å
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MTK MT3318
Abstract: MC-1513 mediatek mediatek mt3318 ls20031 locosys 1513 locosys mc 1513 LS20032 of MC-1513 GPS module LS20033
Text: LOCOSYS Technology Inc. 20F.-13, No.79, Sec. 1, Xintai 5th Rd., Xizhi City, Taipei County 221, Taiwan ℡ 886-2-8698-3698 ¬ 886-2-8698-3699 ßwww.locosystech.com Product name Description LS20030 GPS smart antenna module/USB,9600BPS,30x30mm LS20031 GPS smart antenna module/TTL,9600BPS,30x30mm
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LS20030
9600BPS
30x30mm
LS20031
LS20032
module/RS232
MTK MT3318
MC-1513
mediatek
mediatek mt3318
ls20031
locosys 1513
locosys mc 1513
LS20032
of MC-1513 GPS module
LS20033
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SG 1050
Abstract: C06 60V polysilicon fuse
Text: 0.6µ µm 60V CMOS Process ID: SG [C06] Applications Main Process Flow • Automotive, including 42V standard. • P Substrate • HV Well Formation • LOCOS Field Oxidation • Twin Retrograde Wells
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Untitled
Abstract: No abstract text available
Text: Process Introduction 1.5um BiCMOS Process Technology Process features Key Design Rules P substrate and P-epi Twin well LOCOS High performance bipolar devices Dual gate oxide available（optional） Low voltage CMOS 5V High voltage CMOS(30V)
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GSC3F-7879
Abstract: sirf star iii SC-1513 locosys 1513 sirf star III settings GSC3F sky star 2 sirf star iii e sirf GSC3f SiRF
Text: LOCOSYS Technology Inc. 20F.-13, No.79, Sec. 1, Xintai 5th Rd., Xizhi City, Taipei County 221, Taiwan ℡ 886-2-8698-3698 ¬ 886-2-8698-3699 ßwww.locosystech.com/ 1 Product name Description Version SC-1513 Datasheet of SC-1513 GPS module 1.2 Introduction
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SC-1513
SC-1513
20-channel
GSC3F-7879
sirf star iii
locosys 1513
sirf star III settings
GSC3F
sky star 2
sirf star iii e
sirf GSC3f
SiRF
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GSC3F/LP-7979
Abstract: GSC3f/LP sirf star III lp PSRF104 PSRF106 SIRF NMEA Reference Manual Revision 2.1 sirf star III settings sirf star III GSC3F/LP GSC3f/LP 7979 GSC3f* GSC3f GSC3f sirf star III lp GSC3f/LP
Text: LOCOSYS Technology Inc. 20F.-13, No.79, Sec. 1, Xintai 5th Rd., Xizhi City, Taipei County 221, Taiwan ℡ 886-2-8698-3698 ¬ 886-2-8698-3699 ßwww.locosystech.com Product name Description LS20025 GPS smart antenna module/SS3LP,MMCX,9600BPS, Version 1.1 Datasheet of GPS smart antenna module, LS20025
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LS20025
9600BPS,
LS20025
GSC3F/LP-7979
GSC3f/LP
sirf star III lp
PSRF104
PSRF106
SIRF NMEA Reference Manual Revision 2.1
sirf star III settings
sirf star III GSC3F/LP
GSC3f/LP 7979
GSC3f* GSC3f GSC3f sirf star III lp GSC3f/LP
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NMOS transistor 0.18 um CMOS
Abstract: 1P3M LOCOS
Text: 0.6um 1P3M High Voltage 16V / 16V updated in 2005.03.29 Features Voltage Logic,High Voltage 5V/5V,16V/16V Starting material P-type (100), 9~12 Ω-cm Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side
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6V/16V
NMOS transistor 0.18 um CMOS
1P3M
LOCOS
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Vg 5V
Abstract: No abstract text available
Text: 0.5um 1P3M Embedded Flat ROM 5V updated in Oct 01, 2004 Features Vdd Core/IO 5V/5V Starting material P-type (100), 9~12 Ω/□ Well Structure CMOS Twin-well Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side Transistor Channel Buried channel PMOS
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50um2
60um2
Vg 5V
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Untitled
Abstract: No abstract text available
Text: 0.6um 1P3M High Voltage 20V / 5V updated in 2005.03.29 Features Voltage Logic,High Voltage 5V/5V, 20V/5V Starting material P-type (100), 9~12 Ω-cm Well Structure CMOS Twin-well (Nwell, Pwell) Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side
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LOCOS
Abstract: DSASW0024855 1P3M
Text: 0.5um 1P3M Logic 5V updated in 2005.03.16 Features Vdd Core/IO 5V/5V Starting material P-type (100), 9~12 Ω/□ Well Structure CMOS Twin-well Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side Transistor Channel Buried channel PMOS Gate oxide (Electrical)
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Descrip-260
50um2
LOCOS
DSASW0024855
1P3M
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cmos transistor 0.35 um
Abstract: 0.35Um c035 ZENER C035 5V IMD2 transistor bsim3v3 polysilicon 20v zener diode 3.3v zener C035
Text: 0.35µ µm 5V / 3.3V CMOS Process ID: SL [C035] Applications Main Process Flow • Interfacing high density industry- • P Substrate standard 0.35um core logic to 5V • LOCOS Field Oxidation
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MTK MT3318
Abstract: mediatek mt3318 Mediatek MT3318 chip mediatek of MC-1513 GPS module mt3318 MC-1513 MT3318 gps GPS Receiver MT3318 Module locosys 1513
Text: LOCOSYS Technology Inc. 20F.-13, No.79, Sec. 1, Xintai 5th Rd., Xizhi City, Taipei County 221, Taiwan ℡ 886-2-8698-3698 ¬ 886-2-8698-3699 ßwww.locosystech.com/ 1 Product name Description Version MC-1513 Datasheet of MC-1513 GPS module 0.9 Preliminary
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MC-1513
MC-1513
MT3318,
MT3318
MTK MT3318
mediatek mt3318
Mediatek MT3318 chip
mediatek
of MC-1513 GPS module
MT3318 gps
GPS Receiver MT3318 Module
locosys 1513
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0.8um
Abstract: 1P2M BPSG MAGNACHIP
Text: 0.8um 1P2M Logic 5V updated in Oct 01, 2004 Features Vdd Core/IO 5V/5V Starting Material P-type (100), 9~12 Ω/□ Well Structure CMOS Twin-well Isolation Conventional LOCOS Transistor Channel Buried channel PMOS Gate oxide (Electrical) 175Å
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2P4M P 82
Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
Text: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features Vdd Core/IO 3.3V / 5V Starting Material P(100), Non-Epi Well Retrograde Twin Well Structure Isolation Conventional LOCOS Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um
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2P3M
Abstract: transistor TI 310
Text: 0.5um 2P3M Mixed Signal 3.3V updated in Oct 01, 2004 Features Vdd Core/IO 3.3V / 3.3V Starting material Well Structure P-type (100), 9~12 Ω/□ CMOS Twin-well Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side Transistor Channel Buried channel PMOS
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50um2
2P3M
transistor TI 310
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247AA
Abstract: 2P3M LOCOS MAGNACHIP diffusion transistor
Text: 0.5um 2P3M Embedded OTP updated in 2005.03.16 Features Vcc 5V Starting Material P 100 , Non-epi Well Structure CMOS Twin-well Isolation Conventional LOCOS Transistor Channel Buried channel PMOS NV Gate oxide 128Å HV Gate oxide 247Å EPROM Tunnel oxide
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500usec
247AA
2P3M
LOCOS
MAGNACHIP
diffusion transistor
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0.35Um 1P4M
Abstract: nmos transistor 0.35 um
Text: 0.35um 1P4M Logic 3.3V updated in 2005.03.24 Features Vdd Core/IO 3.3V / 5V Starting Material P(100), Non-Epi Well Retrograde Twin Well Structure Isolation Conventional LOCOS Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel Buried Channel PMOS
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TRANSISTOR 545
Abstract: No abstract text available
Text: 0.35um 1P4M Logic 3.3V /5V updated in 2005.03.24 Features Vdd Core/IO 3.3V / 5V Starting Material P(100), Non-Epi Well Retrograde Twin Well Structure Isolation Conventional LOCOS Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel
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MN6052
Abstract: E1115 HD43880 types of motors icm7038 circuit diagram of pulse width modulation Quartz Clock Hitachi Scans-001 16Hz
Text: HD43880 ANALOG CLOCK 4MHz COUNTER+DRIVER HD43880 is a standard C MOS 1C for a quartz clock circuit of 4.19 MHz oscillation. It contains oscillator, divider, output control circuit and output buffers for motor drive and alarm. By applying low threshold technique and Si-gate LOCOS
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HD43880
HD43880
e1115
ICM7038
MN6052
types of motors
circuit diagram of pulse width modulation
Quartz Clock
Hitachi Scans-001
16Hz
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