Untitled
Abstract: No abstract text available
Text: ^ctdxy isStmi-Conchctoi ZPiotLata., Una. TELEPHONE: 873 376-2882 (212) 227-6008 FAX! (973) 378 0960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA 2N2483 NPN SILICON TRANSISTOR MECHANICAL DATA CASE: TERMINAL CONNECTIONS: JFflFC TO-1H Icnrt 1 Fmittnr l.o.irt 2 Unso
|
Original
|
2N2483
R9-10KI1,
BW-20
1000cps,
200cpS
-10K1I
|
PDF
|
transistor c 4106
Abstract: varta 4106 varta alkaline varta alkaline aa
Text: LR 6 / AA power one Primary Alkaline Manganese Cylindrical Data Sheet Type number 4106 Designation IEC System LR6 Zn-MnO2 Alkaline Shelf Life (Coding)* 7 years Nominal Voltage [V] Typical Capacity C [mAh] Premissible Temperature Range 1.5 2.600 (discharge with high-resistance)
|
Original
|
D-73479
transistor c 4106
varta 4106
varta alkaline
varta alkaline aa
|
PDF
|
varta 4106
Abstract: varta aa lr6 alkaline varta transistor c 4106 varta aa VARTa aa 4106 alkaline varta 4106 varta alkaline varta alkaline aa
Text: LR 6 / AA power one Primary Alkaline Manganese Cylindrical Data Sheet Type Number 4106 Designation IEC System LR6 Zn-MnO2 Alkaline Shelf Life (Coding)* 7 years Nominal Voltage [V] Typical Capacity C [mAh] Premissible Temperature Range 1.5 2600 (discharge with high-resistance)
|
Original
|
D-73479
varta 4106
varta aa lr6
alkaline varta
transistor c 4106
varta aa
VARTa aa 4106
alkaline varta 4106
varta alkaline
varta alkaline aa
|
PDF
|
transistor 4103
Abstract: VARTa aaa LR03 alkaline varta LR03 varta 4103
Text: LR 03 / AAA power one Primary Alkaline Manganese Cylindrical Data Sheet Type Number 4103 Designation IEC System LR03 Zn-MnO2 Alkaline Shelf Life (Coding)* 7 years Nominal Voltage [V] Typical Capacity C [mAh] Premissible Temperature Range 1.5 1200 (discharge with high-resistance)
|
Original
|
D-73479
transistor 4103
VARTa aaa
LR03
alkaline varta LR03
varta 4103
|
PDF
|
ALKALINE LR20
Abstract: LR20 LR20D LR20 varta VARTA 4120
Text: LR 20 / D power one Primary Alkaline Manganese Cylindrical Data Sheet Type Number 4120 Designation IEC System LR20 Zn-MnO2 Alkaline Shelf Life (Coding)* 7 years Nominal Voltage [V] Typical Capacity C [mAh] Premissible Temperature Range 1.5 16500 (discharge with high-resistance)
|
Original
|
D-73479
ALKALINE LR20
LR20
LR20D
LR20 varta
VARTA 4120
|
PDF
|
omron E3F
Abstract: Y92E-M12PUR4A5M-L E3FZ-T86H-D e3f omron Y92E-M12PUR4S5M-L E3FZ-D87 Y92E-M12PUR4A2M-L Y92E-M12 E3FZ-T81H E3FZ-LS89H
Text: E55E-EN-01+E3FZ-E3FR+Datasheet.FM Seite 1 Dienstag, 15. April 2008 5:17 17 Easy mounting photoelectric sensor in short M18 housing E3FZ/E3FR • Secure-click snap mounting for fast installation • High power LED for enhanced sensing distance • Short housing with less than
|
Original
|
E55E-EN-01
NL-2132
omron E3F
Y92E-M12PUR4A5M-L
E3FZ-T86H-D
e3f omron
Y92E-M12PUR4S5M-L
E3FZ-D87
Y92E-M12PUR4A2M-L
Y92E-M12
E3FZ-T81H
E3FZ-LS89H
|
PDF
|
ZEN-10C1AR-A
Abstract: ZEN-10C1 omron zen ZEN-10C2DR-D schema inverter LCD ZEN-10C1DR-D ZEN-10C ZEN-10C1DT-D omron zen 10c1dr-d omron zen-4ed
Text: General Specifications Performance Specifications Item Specification ZEN-10C Power supply voltage 100 to 240 VAC Rated power supply voltage 85 to 264 VAC AR-A Item ZEN-10C DR-D 24 VDC Specification Control method Stored program control I/O control method Cyclic scan
|
Original
|
ZEN-10C
ZEN-SOFT01-V2
ZEN-10C1AR-A)
ZEN-KIT01-EV2
56/ter
ZEN-10C1AR-A
ZEN-10C1
omron zen
ZEN-10C2DR-D
schema inverter LCD
ZEN-10C1DR-D
ZEN-10C
ZEN-10C1DT-D
omron zen 10c1dr-d
omron zen-4ed
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7033/S7034 series Back-thinned FFT-CCD S7033/S7034 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. S7033/S7034 series feature large full-well capacity in horizontal CCD register. By using the binning operation, S7033/S7034 series can be used
|
Original
|
S7033/S7034
SE-171
KMPD1029E10
|
PDF
|
TIC 122 Transistor
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7033/S7034 series Back-thinned FFT-CCD S7033/S7034 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. S7033/S7034 series feature large full-well capacity in horizontal CCD register. By using the binning operation, S7033/S7034 series can be used
|
Original
|
S7033/S7034
SE-171
KMPD1029E08
TIC 122 Transistor
|
PDF
|
DC04 display
Abstract: how to test POWER MOSFET with digital multimeter tektronix 576 curve tracer VISHAY VT 300 WEIGHT INDICATOR TSMC 0.35Um FLUKE 79 manual THERMAL ELECTRIC COOLER hp 4274A 532 nm laser diode PHOTO TRANSISTOR ppt
Text: Quality And Reliability Report 2005 DC04-0001 Page 1 of 79
|
Original
|
DC04-0001
DC04 display
how to test POWER MOSFET with digital multimeter
tektronix 576 curve tracer
VISHAY VT 300 WEIGHT INDICATOR
TSMC 0.35Um
FLUKE 79 manual
THERMAL ELECTRIC COOLER
hp 4274A
532 nm laser diode
PHOTO TRANSISTOR ppt
|
PDF
|
"duplex led display"
Abstract: LTH 1550 01 DualLed ADM7008 7 segment display duplex led type duplex led display
Text: ADM7008 Octal Ethernet 10/100M PHY Datasheet Version 1.1 ADMtek.com.tw Information in this document is provided in connection with ADMtek products. ADMtek may make changes to specifications and product descriptions at any time, without notice. Designers must not rely on
|
Original
|
ADM7008
10/100M
"duplex led display"
LTH 1550 01
DualLed
ADM7008
7 segment display duplex led type
duplex led display
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3327 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 Unit in mm OR MUTING AND SWITCHING APPLICATIONS • • • • High Emitter-Base Voltage : V e b q = 25V Min. High Reverse hpE : hp^ = 150(Typ.) (V q e = —2V, I q = —4mA) Low On Resistance : R q n = 1H (Typ.) (Iß = 5mA)
|
OCR Scan
|
2SC3327
|
PDF
|
schematic diagram UPS
Abstract: STU5NA90
Text: S G S -1H 0M S 0N [MOigœilLiera *® STU5NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE S TU 5N A90 V dss R dS oii Id 900 V < 2 .4 a. 5 A . TYPICAL RDs(on) =2.1 £1 . ± 30V GATE TO SOURCE VOLTAGE RATING . REPETITIVE AVALANCHE TESTED
|
OCR Scan
|
STU5NA90
STU5NA90
Max220â
O-22C)
T0-220
Max220
schematic diagram UPS
|
PDF
|
BFQ22S
Abstract: transistor dc 558 npn BFQ24 transistor 6 MHz transistor bt2
Text: Product sp ecification P h ilip s S em icon d u ctors NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL D ESCRIPTION Z/7 SbE D • 711GÛ2L. BFQ22S 00453^0 114 H P H I N PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the
|
OCR Scan
|
BFQ22S
BFQ24.
7110fl2fc.
BFQ22S
transistor dc 558 npn
BFQ24
transistor 6 MHz
transistor bt2
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: CXL5509M/P SONY, CMOS-CCD 1H/2H Delay Line for NTSC Description CXL5509M 16 pin SOP Plastic CXL55Q9M/P is a CMOS-CCD delay line developed for video signal processing. Usage in conjunction with an external iow pass titter provide 1H and 2H delay signals simultaneously (For NTSC signals).
|
OCR Scan
|
CXL5509M/P
CXL5509M
CXL55Q9M/P
CXL5509P
130mW
CXL5509W/P
16pin
6-P-0300-A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CXL5502M/P/N SONY CMOS-CCD 1H Delay Line for NTSC Description CXL5502M 14 pin SOP Plastic The CXL5502M/P/N are CMOS-CCD delay line ICs that provide 1H delay for NTSC signals including the external low pass filter. The ICs contain a PLL circuit (quadruple progression).
|
OCR Scan
|
CXL5502M/P/N
CXL5502M
CXL5502M/P/N
CXL5502P
CXL5502N
OP014-P-0300-AX
DD17D3S
CXL5S02M/P/N
14pin
|
PDF
|
BFQ163
Abstract: No abstract text available
Text: Product specification Philips Semiconductors t• —3 3 ~Of5> NPN 1 GHz video transistor PHILIPS INTERNATIONAL D E S C R IP T IO N SbE D ■ BFQ163 7110fi2fei QDMSSfll 7fl2 ■ P H I N P IN N IN G N P N silicon epitaxial transistor in a S O T 5 T O -39 envelope with
|
OCR Scan
|
BFQ163
7110fi2b
Q045S61
MBB678
T-33-05
D04S5Ã
BFQ163
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel fntancam entpiode field-effectporor transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
BUK436-800A/B
BUK436
-800A
-800B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 15E D I ? n 7 G7 b 0 DQ4 3 4 Ö fl T-Z0-2f\ 2SC3294 201OA NPN Planar Silicon Darlington Transistor Driver Applications 1422A Duo . Switching of L load motor driver, printer hammer driver, relay driver Features . High DC current gain.
|
OCR Scan
|
2SC3294
201OA
IS-20MA
IS-313
IS-313A
IS-126
Q0D37S1
|
PDF
|
3SK168
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CÖRP 12E D | OGDS4 7 S =1 T 'il'Z s r 3SK168 GaAs Dual Gate M ES Silicon Field-Effect Transistor 2053 -' TTITD Tb 'S- • U H F Amp, Mixer Applications 2252 Absolute H a z l a n Batlags at Ta=25°C Drain to Source Voltage 'DS Gatel to Source Voltage
|
OCR Scan
|
3SK168
100uA
IS-20MA
IS-313
IS-313A
3SK168
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for
|
OCR Scan
|
023SbQS
Q004312
60203-Y66
BCY66
QQ0M31Ö
|
PDF
|
transistor w1P
Abstract: W1p TRANSISTOR w1p 60 W1p 25 TRANSISTOR w1p npn w1p code w1p 42
Text: b b S 3 T 31 0 Q 2 S 3 6 B 7 7 H « A P X Philips Semiconductors N AMER PHILIPS/D ISCR ETE Product specification L 7 E 1 £ PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF
|
OCR Scan
|
BFT92
BFR92
BFR92A.
transistor w1P
W1p TRANSISTOR
w1p 60
W1p 25 TRANSISTOR
w1p npn
w1p code
w1p 42
|
PDF
|
transistor T K 2056
Abstract: K 2056 transistor transistor K 2056
Text: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage
|
OCR Scan
|
SS2SC4271
T0126
300mA,
100mA)
SS2SC4272
1S-126A
IS-20MA
transistor T K 2056
K 2056 transistor
transistor K 2056
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TN1206L N-Channel Enhancement-Mode MOS Transistor m SSgA PRODUCT SUMMARY V BR DSS TO-92 (TO-226AA) •d “ST (A) 6 0.18 120 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: SeeVN D Q 12 I — ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
|
OCR Scan
|
TN1206L
O-226AA)
|
PDF
|
