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    TRANSISTOR 1GM Search Results

    TRANSISTOR 1GM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1GM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 MMBTA06 MMBTA56

    1gm transistor

    Abstract: 1GM sot-23 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 MMBTA06 MMBTA56 100mA 100mA, 100MHz 1gm transistor 1GM sot-23 transistor

    1gm marking

    Abstract: No abstract text available
    Text: MMBTA06 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP tranistor MMBTA56 is recommended. • This transistor is also available in the TO-92 case


    Original     		PDF MMBTA06 MMBTA56 MPSA06. OT-23 MMBTA06 MMBTA06-GS18 MMBTA06-GS08 D-74025 01-Sep-04 1gm marking

    Untitled

    Abstract: No abstract text available
    Text: MMBTA06Q Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product Features SOT-89 • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. D D1 • As complementary type, the PNP tranistor MMBTA56Q is recommended.


    Original     		PDF MMBTA06Q OT-89 MMBTA56Q MPSA06. OT-89 OT-223 OT-23 01-Jun-2002

    1gm transistor

    Abstract: 1GM sot-23 transistor marking code 1GM 1GM j MMBTA06 MMBTA56 MPSA06
    Text: MMBTA06 Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. SOT-23 3.Collector • As complementary type, the PNP tranistor MMBTA56 is


    Original     		PDF MMBTA06 OT-23 MMBTA56 OT-23 MPSA06. 100mA, 100mA 100MHz 01-Jun-2004 1gm transistor 1GM sot-23 transistor marking code 1GM 1GM j MMBTA06 MPSA06

    SOT-23

    Abstract: No abstract text available
    Text: Formosa MS Drive NPN Transistor FMBTA05 / FMBTA06 List List. 1 Package outline. 2


    Original     		PDF FMBTA05 FMBTA06 1000hrs 15min 20sec 1000cycle 96hrs 1000hrs SOT-23

    1GM sot-23 transistor

    Abstract: UCT 122
    Text: MMBTA06 Small Signal Transistors NPN uct New Features d o r P • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP tranistor MMBTA56 is recommended. • This transistor is also available in the TO-92 case


    Original     		PDF MMBTA06 OT-23 MMBTA56 MPSA06. OT-23 1GM sot-23 transistor UCT 122

    1GM sot-23 transistor

    Abstract: 1gm transistor 1GM sot-23 MMBTA06 MMBTA56 MPSA06
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA06 Small Signal Transistors NPN SOT-23 FEATURES .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ As complementary type, the PNP transistor MMBTA56 is recommended. .056 (1.43) .052 (1.33) 1 ♦ This transistor is also available in the TO-92 case with


    Original     		PDF MMBTA06 OT-23 MMBTA56 MPSA06. OT-23 1GM sot-23 transistor 1gm transistor 1GM sot-23 MMBTA06 MPSA06

    1GM sot-23 transistor

    Abstract: 1GM sot-23 MMBTA06 80V SOT-23 1gm transistor marKing 1GM sot-23 MMBTA06 MMBTA05 NPN medium power transistor in a SOT package transistor marking code SOT-23 free IC npn transistor
    Text: BL Galaxy Electrical Production specification NPN General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary PNP type available MMBTA05/MMBTA06 Pb Lead-free MMBTA55/MMBTA56 . z Also available in lead free version. APPLICATIONS


    Original     		PDF MMBTA05/MMBTA06 MMBTA55/MMBTA56) OT-23 MMBTA05 MMBTA06 1GM sot-23 transistor 1GM sot-23 MMBTA06 80V SOT-23 1gm transistor marKing 1GM sot-23 MMBTA06 MMBTA05 NPN medium power transistor in a SOT package transistor marking code SOT-23 free IC npn transistor

    1GM sot-23 transistor

    Abstract: 1gm transistor transistor 1gm
    Text: MMBTA05/MMBTA06 NPN General Purpose Transistor SOT-23 Features — Epitaxial planar die construction. — Complementary PNP type available MMBTA55/MMBTA56 . — Also available in lead free version. Applications — Ideal for medium power amplification and switching


    Original     		PDF MMBTA05/MMBTA06 OT-23 MMBTA55/MMBTA56) MMBTA05 MMBTA06 OT-23 1GM sot-23 transistor 1gm transistor transistor 1gm

    MMBTA06

    Abstract: No abstract text available
    Text: MMBTA06 0.5A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOT-23 High Voltage Application Telephone Application Complementary to MMBTA56 A


    Original     		PDF MMBTA06 OT-23 MMBTA56 100mA 100mA, 100MHz 03-May-2012 MMBTA06

    Marking 1GM

    Abstract: 1gm transistor 1GM sot-23 transistor MMBTA06 MMBTA56 transistor 1gm 6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT-23 FEATURES z z Complementary PNP types available MMBTA56 1. BASE Ldeal for medium power amplification and switching 2. EMITTER 3. COLLECTOR


    Original     		PDF OT-23 MMBTA06 OT-23 MMBTA56 Marking 1GM 1gm transistor 1GM sot-23 transistor MMBTA06 MMBTA56 transistor 1gm 6

    Untitled

    Abstract: No abstract text available
    Text: MMBTA06 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.3 W(Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23


    Original     		PDF MMBTA06 OT-23 -55OC 150OC OT-23 MIL-STD-202E

    1GM sot-23

    Abstract: MMBTA06 1GM sot-23 transistor
    Text: MMBTA06 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.3 W(Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23


    Original     		PDF MMBTA06 OT-23 -55OC 150OC OT-23 MIL-STD-202E 1GM sot-23 MMBTA06 1GM sot-23 transistor

    bfr106

    Abstract: BCW66 marking code FA sot23 12652
    Text: BFR106 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers • For linear broadband amplifiers 2 3 • Special application: antenna amplifiers 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR106 bfr106 BCW66 marking code FA sot23 12652

    BFT91

    Abstract: BFR92p application note marking GFs BCW66 BFR92P E 94733
    Text: BFR92P NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 2 3 from 0.5 mA to 20 mA 1 • Complementary type: BFT91 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


    Original     		PDF BFR92P BFT91 BFT91 BFR92p application note marking GFs BCW66 BFR92P E 94733

    marking p1S

    Abstract: BCR108W BFR92W BFT92W
    Text: BFR92W NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 from 0.5 mA to 20 mA 1 • Complementary type: BFT92W PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


    Original     		PDF BFR92W BFT92W OT323 marking p1S BCR108W BFR92W BFT92W

    2sc2053

    Abstract: 2Sc2053 equivalent
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2053 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on VHF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES


    OCR Scan     		PDF 2SC2053 2SC2053 175MHz 2Sc2053 equivalent

    1GM sot-23 transistor

    Abstract: marking code 1GM sot23-6 marking code 601
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA06 Small Signal Transistors NPN SOT-23 FEATURES .122 (3.-H .118 (3.0) .016 (0.4) Top View ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor MMBTA56 is recommended.


    OCR Scan     		PDF MMBTA06 OT-23 MMBTA56 MPSA06. OT-23 1GM sot-23 transistor marking code 1GM sot23-6 marking code 601

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC20S3 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on VHF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES


    OCR Scan     		PDF 2SC20S3 2SC2053 175MHz 2SC2053

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1GM sot-23 transistor

    Abstract: No abstract text available
    Text: : S v m S : e m i 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 MMBTA06LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W (Tamb=25 °C) 2. 1 Collector current 1cm * 1.3 0.5 A Collector base voltage


    OCR Scan     		PDF MMBTA06LT1 OT-23 950TPY 037TPY 550REF 022REF 1GM sot-23 transistor