high power FET transistor s-parameters
Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .
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ATP-1054,
5963-2025E
5966-0779E
high power FET transistor s-parameters
high frequency transistor ga as fet
ATP-1054
bipolar transistor ghz s-parameter
NF50
RF Transistor s-parameter
vacuum tube amplifier
DC bias of gaas FET
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high frequency transistor ga as fet
Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .
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ATP-1054,
5963-2025E
5966-0779E
high frequency transistor ga as fet
ATP-1054
bipolar transistor s-parameter
high power FET transistor s-parameters
Transistor s-parameter
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
2N3904,
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2N3904
Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
2N3904
LM96163C
LM96163CISD
LM96163CISDX
QFN10
RLs6
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RTU620
Abstract: No abstract text available
Text: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta
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LM96163
LM96163
SNAS433C
RTU620
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Untitled
Abstract: No abstract text available
Text: RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2401, RN2402, RN2403 RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors
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RN2401
RN2406
RN2401,
RN2402,
RN2403
RN2404,
RN2405,
RN1401
RN2401
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USE OF TRANSISTOR
Abstract: Marquardt Switches transistor model list
Text: Transistor Abstraction for the Functional Verification of FPGAs Guy Dupenloup, Thierry Lemeunier, Roland Mayr Altera Corporation 101 Innovation Drive San Jose, CA 95134 1-408-544-8672 {gdupenlo, tlemeuni, rmayr}@altera.com ABSTRACT This paper discusses the use of transistor abstraction to enable the
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3SK131
Abstract: 3SK131-T2-A V12 P12449EJ2V0DS00 TC1508
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS Unit: mm FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage
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3SK131
3SK131
3SK131-T2-A V12
P12449EJ2V0DS00
TC1508
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3SK131
Abstract: P12449EJ2V0DS00
Text: DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS Unit: mm FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage
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3SK131
3SK131
P12449EJ2V0DS00
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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70572
Abstract: bipolar transistor tester SMP30N10 "Integrated Technology corporation" AN601 RPKC MOSPOWER Design Data Book 1983 uis test
Text: AN601 Vishay Siliconix Unclamped Inductive Switching Rugged MOSFETs For Rugged Environments The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents
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AN601
15-Feb-94
70572
bipolar transistor tester
SMP30N10
"Integrated Technology corporation"
AN601
RPKC
MOSPOWER Design Data Book 1983
uis test
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Untitled
Abstract: No abstract text available
Text: RN1401～RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1401, RN1402, RN1403 RN1404, RN1405, RN1406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplified circuit design
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RN1401ï
RN1406
RN1401,
RN1402,
RN1403
RN1404,
RN1405,
RN2401
RN2406
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microwave transistor siemens bfp 420
Abstract: RF Transistors smd transistor chart smd transistor NJ transistor R 405 doppler radar SMX-1 AG SMD TRANSISTOR Siemens transistors rf SIEMENS MICROWAVE RADIO 8 GHz
Text: APPLICATIONS DISCRETE SEMICONDUCTORS Kurt Brenndörfer ● Gerhard Lohninger ● Lothar Musiol ● Jakob Huber Fourth-generation bipolar RF transistors with 25 GHz transit frequency: SIEGET heads the pack Since the very beginning of RF transistor development,
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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Untitled
Abstract: No abstract text available
Text: 25E D N AMER PHI LI PS/ DIS CR ET E bb53T31 0020515 1 • BUK455-600A BUK455-600B PowerMOS transistor 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53T31
BUK455-600A
BUK455-600B
BUK455
-600A
-600B
si10Id
btS3131
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PXTA14
Abstract: No abstract text available
Text: bbsa'm o o 2 s c]flti oTb « a p x N AMER PHILIPS/DISCRETE PXTA64 b7E D _ /v_ PNP SMALL-SIGNAL DARLINGTON TRANSISTOR PNP small-signal darlington transistor, housed in a microminiature envelope SOT-89 . It is intended primarily for use in preamplifier input applications requiring high input impedance.
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PXTA64
OT-89)
PXTA14.
PXTA14
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3SK131
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • S uita ble for use as RF a m p lifie r in V H F T V tun er. • Low • High • Low NF : 1.3 dB T Y P .
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3SK131
3SK131
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BUK455
Abstract: BUK455-600B BUK455-600A BUK455 600b T0220AB BUK455 600
Text: N AMER P H I L I P S / D I S C R E T E 25E D • ^5 3 = 1 3 1 0 0 2D S1 5 1 ■ PowerMOS transistor BUK455-600A BUK455-600B r ^ 2 i-} 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bb53T31
BUK455-600A
BUK455-600B
T-21-i3
BUK455
-600A
-600B
BUK455 600b
T0220AB
BUK455 600
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BUK455-600B
Abstract: BUK455-600A BUK455 T0220AB
Text: N AMER PH I L I P S / D I S C R E T E 2 5 E ^53=131 D 0 0 S D 5 15 1 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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00SD515
BUK455-600A
BUK455-600B
T-21-13
BUK455
-600A
-600B
BUK455-600B
BUK455-600A
T0220AB
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Helipot POTENTIOMETER
Abstract: 2N4947 transistor WL 431 Helipot 2N4949 2N4947 JAN 2N4948 JANTX TXAL118B.388B 2N4948 2n4948 jan
Text: The documentation and process conversion | measures necessary to comply with this | revision shall be completed by Q 9 - 3 0 - 92 J MIL-S-19500/388B 30 J u n e 1992 SUPERSEDING MIL-S-19500/388A 11 July 1983 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION
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MIL-S-19500/388B
MIL-S-19500/388A
2N4947,
2N4948,
2N4949
MIL-S-19500.
Helipot POTENTIOMETER
2N4947
transistor WL 431
Helipot
2N4947 JAN
2N4948 JANTX
TXAL118B.388B
2N4948
2n4948 jan
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BUW62
Abstract: NPN 400V 40A LE17 TSLA Scans-007954
Text: SEMELAB 8133167 ÜOOOSOS 3 H S M L B 37E D LTD SEMELAB JUL 0 6 1983 BUW 62 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitablefor applications requiring low saturation voltage and high gain for reduced load operation M E C H A N IC A L D A T A Dim ensions in mm
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-33-/r
BUW62
NPN 400V 40A
LE17
TSLA
Scans-007954
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design dielectric resonator oscillator
Abstract: wide band rf reference designs DIELECTRIC COAXIAL RESONATOR varactor diode q factor measurement J048A
Text: A COMPARISON OF MICROSTRIP & COAXIAL RESONATOR VOLTAGE CONTROLLED OSCILLATOR DESIGN APPROACHES APPLICATIONS single transistor driven into oscillation with positive feedback and frequency changed with a varactor tuned resonant circuit. The resonant element for the
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1920s.
10WBAN0
J048A
KD-P-B81N8
design dielectric resonator oscillator
wide band rf reference designs
DIELECTRIC COAXIAL RESONATOR
varactor diode q factor measurement
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