IRFF230
Abstract: TB334
Text: IRFF230 Data Sheet March 1999 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET • 5.5A, 200V Formerly developmental type TA17412. Ordering Information IRFF230 PACKAGE TO-205AF 1892.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF230
TA17412.
O-205AF
IRFF230
TB334
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Untitled
Abstract: No abstract text available
Text: IRFF230 Data Sheet Title FF2 bt 5A, 0V, 00 m, March 1999 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF230
IRFF230
O-205AF
TB334
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c102 TRANSISTOR
Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency
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PTFA220041M
PTFA220041M
PG-SON-10
c102 TRANSISTOR
LM7805 M SMD
R804
c103 TRANSISTOR
transistor c107 m
TRANSISTOR c801
NFM18PS105R0J3
TRANSISTOR c104
TL217
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transistor c735
Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency
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PTFA220041M
PTFA220041M
PG-SON-10
transistor c735
ATC100A120FW150XB
TRANSISTOR c104
TL107
c103 m TRANSISTOR
c103 TRANSISTOR
TRANSISTOR C802
C735 transistor
TRANSISTOR C107
TRANSISTOR C103
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SMD r801
Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,
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PTFA220041M
PTFA220041M
SMD r801
TL217
TL218
TL2082
TRANSISTOR c801
c803
R804
3224W-202ECT-ND
transistor c803
TL223
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c102 TRANSISTOR
Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency
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PTFA220041M
PTFA220041M
c102 TRANSISTOR
tl113
c103 TRANSISTOR
TRANSISTOR c104
NFM18PS105R0J3
c103 TRANSISTOR equivalent
c104 TRANSISTOR
TL108
tl111
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Untitled
Abstract: No abstract text available
Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power ampliier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,
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PTFA220041M
PTFA220041M
PG-SON-10
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dc motor 5v
Abstract: 1RF541 SMP60N06 replacement 74C906 DG303 IRF541 MAX1822 MAX1822ESA MAX333 MAX622
Text: 19-1892; Rev 0; 1/01 High-Side Power Supply _Features ♦ +3.5V to +16.5V Operating Supply Voltage Range A +3.5V to +16.5V input supply range and a typical quiescent current of only 150µA make the MAX1822 ideal for a wide range of line- and battery-powered switching
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MAX1822
MAX622.
MAX1822
dc motor 5v
1RF541
SMP60N06 replacement
74C906
DG303
IRF541
MAX1822ESA
MAX333
MAX622
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dc motor 5v
Abstract: c2pr 74c906 SMP60N06 replacement 1RF541 H-Bridge Motor Driver 2N017
Text: 19-1892; Rev 0; 1/01 High-Side Power Supply _Features ♦ +3.5V to +16.5V Operating Supply Voltage Range A +3.5V to +16.5V input supply range and a typical quiescent current of only 150µA make the MAX1822 ideal for a wide range of line- and battery-powered switching
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MAX1822
MAX1822
dc motor 5v
c2pr
74c906
SMP60N06 replacement
1RF541
H-Bridge Motor Driver
2N017
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1RF541
Abstract: No abstract text available
Text: 19-1892; Rev 0; 1/01 High-Side Power Supply _Features ♦ +3.5V to +16.5V Operating Supply Voltage Range ♦ Output Voltage Regulated to VCC + 11V typ ♦ 150µA (typ) Quiescent Current ♦ Power-Ready Output A +3.5V to +16.5V input supply range and a typical quiescent current of only 150µA make the MAX1822 ideal
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MAX1822
MAX622.
MAX1822
1RF541
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dc motor 5v
Abstract: 1RF541 c2pr MAX333 74c906
Text: 19-1892; Rev 0; 1/01 High-Side Power Supply _Features ♦ +3.5V to +16.5V Operating Supply Voltage Range A +3.5V to +16.5V input supply range and a typical quiescent current of only 150µA make the MAX1822 ideal for a wide range of line- and battery-powered switching
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MAX1822
21-0041B
MAX1822EPA+
MAX1822EPA
MAX1822ESA
MAX1822ESA-T
MAX1822ESA+
dc motor 5v
1RF541
c2pr
MAX333
74c906
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CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
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400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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Untitled
Abstract: No abstract text available
Text: 6427525 N E C ELECTRONICS IN C 98D 18922 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK773 DESCRIPTION The 2SK773 is N-channel MOD Field E ffect Power Transistor designed for switching power supplies DC-DC converters. FEATURES • • • PACKAGE DIMENSIONS
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2SK773
2SK773
T-39-13
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2SK784
Abstract: No abstract text available
Text: 6427 52 5 N E C ELECTRON ICS INC 98D 18928 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Tfl • t427S2S 3 I _ _ _ 2SK784 DESCRIPTION The 2SK784 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters. FEA TU R ES
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t427sas
2SK784
2SK784
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2SK773
Abstract: CEE 32A DIODE S45
Text: 6427525 N E^C ELECTRONICS INC 98D 18922 .4575S5 ÜGIflTEE E D Y - S f 'S S SsSv N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK773 DESCRIPTION The 2SK773 is N-channel MOD Field Effect Power Transistor PACKAGE DIM ENSIONS designed for switching power supplies DC-DC converters.
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2SK773
2SK773
Voltag100
CEE 32A
DIODE S45
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2SK774
Abstract: No abstract text available
Text: 6427525 N E C ELECTRONICS as SaSyir.";- FEATU RES 98D 18925 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ~Tfi D ESCRIPTIO N INC D E | b457S2S OQlfl^BS fl 2SK774 The 2SK774 is N-channel MOS Field Effect Power Transistor designed for switching power supplies OC-OC converter.
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2SK774
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n10n
Abstract: 2SK784 transistor 2sk784
Text: 6427525 N E C ELECTRONICS INC 98D 18928 D N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR IB DESCRIPTION FEA TU R ES 2SK784 E | b i 2 ?sas OOlMao 3 I The 2SK784 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters.
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2SK784
2SK784
Curre00
n10n
transistor 2sk784
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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2SC1892
Abstract: E JHAA AC42C
Text: 2/ U D > N P N = « f f i l b « . W h 5 > 2; ^ SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR O * ?- y V o Color TV Horizontal Outp u t A p p l ications • A 2 SC 1892 V CB 0 = 1 5 0 0 V • V cœ eat = 5 V (Typ.) ; -X -í y ; l&ZfcÆfè MAXIMUM RATINGS CHARACTERISTIC
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2sc1892
AC42C
2SC1892
E JHAA
AC42C
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germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014
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I815/KTN
10I5/KTP
1923/KTN
380TM/KTN
germanium
kia 7208
KIA 7313
germanium transistor
speaker protector
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2SC1871
Abstract: n 1895 1878 TRANSISTOR 2SA893
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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frc-25
2SC1871
n 1895
1878 TRANSISTOR
2SA893
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Untitled
Abstract: No abstract text available
Text: DATA SHEET r NEC S ILIC O N TR A N SISTO R 2SD1699 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD D E S C R IP T IO N T h e 2 S D 1 6 9 9 is N P N silic o n e p ita xia l d a r lin g t o n t r a n sisto r d e sig n e d f o r p uise m o to r, p rin te r d rive r, so le n o id drive r.
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2SD1699
2SD1699
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