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    TRANSISTOR 1850 Search Results

    TRANSISTOR 1850 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1850 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 1850

    Abstract: transistor s 623 1850 transistor
    Text: 1719-35 35 Watt - 28 Volts, Class C Microwave 1725 - 1850 MHz Preliminary Issue GENERAL DESCRIPTION CASE OUTLINE The 1719-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1725 -1850 MHz. This transistor is


    Original     		PDF 1850MHz, transistor 1850 transistor s 623 1850 transistor

    transistor 1850

    Abstract: No abstract text available
    Text: e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB transistor 1850

    Untitled

    Abstract: No abstract text available
    Text: 1719-2 2 Watts, 22 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION The 1719-2 is a COMMON BASE transistor capable of providing 2 Watts, Class C output power over the band 1750-1850 MHz. The transistor includes input prematching for full Broadband capabiliy. Gold metalizaton and


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1719-8 8 Watts, 28 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION The 1719-8 is a COMMON BASE transistor capable of providing 8 Watts, Class C output power over the band 1750-1850 MHz. The transistor includes input prematching for full Broadband capabiliy. Gold metalizaton and


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1719-2 2 Watts, 22 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION The 1719-2 is a COMMON BASE transistor capable of providing 2 Watts, Class C output power over the band 1750-1850 MHz. The transistor includes input prematching for full Broadband capabiliy. Gold metalizaton and


    Original     		PDF

    1718-32L

    Abstract: No abstract text available
    Text: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier


    Original     		PDF 1718-32L 1718-32L

    100 watt transistor

    Abstract: No abstract text available
    Text: 1819-35 35 Watt - 28 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes


    Original     		PDF 1850MHz, 100 watt transistor

    diode GP 829

    Abstract: MDA215 MDA209 Diode GP 622 BY239 stub BD241C BLV2046 MDA208 philips ferrite 4b1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV2046 UHF power transistor Product specification 1997 Aug 22 Philips Semiconductors Product specification UHF power transistor BLV2046 FEATURES PINNING - SOT460A • Emitter ballasting resistors for optimum temperature


    Original     		PDF BLV2046 OT460A SCA55 127067/00/01/pp12 diode GP 829 MDA215 MDA209 Diode GP 622 BY239 stub BD241C BLV2046 MDA208 philips ferrite 4b1

    BDT91

    Abstract: BY239 LLE15180X MBD738
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE15180X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF LLE15180X SCA53 127121/00/02/pp12 BDT91 BY239 LLE15180X MBD738

    philips ferrite 4b1

    Abstract: 12NC philips BDT91 BY239 LLE18300X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18300X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18300X FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D159 LLE18300X SCA63 125002/00/03/pp12 philips ferrite 4b1 12NC philips BDT91 BY239 LLE18300X

    equivalent of SL 100 NPN Transistor

    Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D159 LLE18040X SCA63 125002/00/02/pp12 equivalent of SL 100 NPN Transistor TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR

    ferroxcube 4322

    Abstract: PRC201 SMD CAPACITOR L27 BLV2048 smd L17 npn
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D374 BLV2048 UHF push-pull power transistor Preliminary specification 1999 Apr 23 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 PINNING - SOT494A FEATURES • Emitter ballasting resistors for optimum temperature


    Original     		PDF M3D374 BLV2048 OT494A SCA63 budgetnum/printrun/ed/pp15 ferroxcube 4322 PRC201 SMD CAPACITOR L27 BLV2048 smd L17 npn

    transistor SMD DK

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV2042 UHF power transistor Product specification Supersedes data of 1996 Feb 09 1997 Jul 11 Philips Semiconductors Product specification UHF power transistor BLV2042 FEATURES PINNING - SOT409B • Emitter ballasting resistors for optimum


    Original     		PDF BLV2042 OT409B SCA55 127067/00/02/pp16 transistor SMD DK

    TEKELEC 297

    Abstract: BD239 BY239 LXE18400X IC 3263
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D039 LXE18400X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF M3D039 LXE18400X SCA63 125002/00/02/pp12 TEKELEC 297 BD239 BY239 LXE18400X IC 3263

    PHX18NQ20T

    Abstract: No abstract text available
    Text: PHX18NQ20T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification M3D308 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF PHX18NQ20T M3D308 PHX18NQ20T OT186A. OT186A,

    AcP 9805

    Abstract: 8GP50 blv2047 M3D372
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D372 BLV2047 UHF power transistor Product specification Supersedes data of 1998 Mar 10 1999 Jan 28 Philips Semiconductors Product specification UHF power transistor BLV2047 PINNING - SOT468A FEATURES • Emitter ballasting resistors for optimum


    Original     		PDF M3D372 BLV2047 BLV2047 OT468A SCA61 125002/00/05/pp12 AcP 9805 8GP50 M3D372

    BLV2047

    Abstract: 4322-020-34420 M3D372 mbk200 ferroxcube 4322
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D372 BLV2047 UHF power transistor Product specification Supersedes data of 1999 Jan 28 1999 Jun 09 Philips Semiconductors Product specification UHF power transistor BLV2047 PINNING - SOT468A FEATURES • Emitter ballasting resistors for optimum


    Original     		PDF M3D372 BLV2047 OT468A 125002/06/pp12 BLV2047 4322-020-34420 M3D372 mbk200 ferroxcube 4322

    BLV2042

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLV2042 UHF power transistor Product specification Supersedes data of 1997 July 11 2000 May 08 Philips Semiconductors Product specification UHF power transistor BLV2042 FEATURES PINNING - SOT409A • Emitter ballasting resistors for optimum


    Original     		PDF M3D175 BLV2042 OT409A 613524/03/pp16 BLV2042

    transistor 2222

    Abstract: "MARKING CODE S4" marking 82 sot343 BC548 bc548 PLASTIC
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X


    Original     		PDF BFG11W/X OT343 SCA49 127101/1200/02/pp12 transistor 2222 "MARKING CODE S4" marking 82 sot343 BC548 bc548 PLASTIC

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS720MC ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A


    Original     		PDF ZXTPS720MC ZX3CD3S1M832

    RF POWER TRANSISTOR NPN

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20156 8 Watts, 1350-1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    pj 72 diode

    Abstract: pj 67 diode W1872 diode pj 72
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP18N20E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and


    OCR Scan     		PDF PHP18N20E T0220AB pj 72 diode pj 67 diode W1872 diode pj 72

    ld18a

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    OCR Scan     		PDF PHP18N20E T0220AB ld18a

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931