transistor C458
Abstract: op027 SAA4849PS computer smps circuit diagram saa4849 saa4848ps philips 107 crt monitor vga connector crt monitor circuit diagram FC260 circuit diagram electronic choke for tube light
Text: APPLICATION NOTE 17 inch 70kHz CRT monitor demo set featuring SAA4848/SAA4849 AN10280_1 Philips Semiconductors TP97035.3/W97 TRAD Philips Semiconductors 17 inch 70kHz CRT monitor demo set featuring SAA4848/SAA4849 Application Note AN10280 1 Purchase of Philips I2C components conveys a
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70kHz
SAA4848/SAA4849
AN10280
TP97035
3/W97
29-aug-2000
AN00032
transistor C458
op027
SAA4849PS
computer smps circuit diagram
saa4849
saa4848ps
philips 107 crt monitor vga connector
crt monitor circuit diagram
FC260
circuit diagram electronic choke for tube light
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PHP18N20E
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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O220AB
PHP18N20E
PHP18N20E
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BUK7506-30
Abstract: BUK7606-30 PHP18N20E
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device
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OT404
BUK7606-30
BUK7506-30
BUK7606-30
PHP18N20E
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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AT2097
Abstract: Z201 9j TR343 LM2435T OC200 TEA1507 Philips PR02 TR353 R300 equivalent TR205
Text: $33/,&$7,21 127 (&20RQLWRU $1 3KLOLSV 6HPLFRQGXFWRUV 73 : 3KLOLSV 6HPLFRQGXFWRUV $SSOLFDWLRQ 1RWH $1 (&20RQLWRU 3XUFKDVH RI 3KLOLSV ,& FRPSRQHQWV FRQYH\V D OLFHQVH XQGHU WKH ,& SDWHQW WR XVH WKH FRPSRQHQWV LQ WKH ,& V\VWHP SURYLGHG WKH V\VWHP FRQIRUPV WR WKH
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20RQLWRU
AT2097
Z201 9j
TR343
LM2435T
OC200
TEA1507
Philips PR02
TR353
R300 equivalent
TR205
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BUK7506-30
Abstract: PHP18N20E
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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O220AB
BUK7506-30
175on
BUK7506-30
PHP18N20E
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Philips tea1090
Abstract: tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-41 DATED JUNE 30, 1999 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION PHILIPS LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODES COMMENTS
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DN-41
LO9585/WD
LO9585
LO9700
OQ8845T/K3
OQ8868HP/K6
QFP47)
X2G-BUK5R3-100B
Philips tea1090
tea1090
tea1402
pcf2705p
philips TEA1090T
SAA7321GP
TDA2579A
LMT 393 N
TDA3653bq
TEA5713
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rd1004
Abstract: BUK7506-30 PHB130N03T PHP18N20E
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device
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OT404
PHB130N03T
rd1004
BUK7506-30
PHB130N03T
PHP18N20E
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BUK7506-30
Abstract: PHP130N03T PHP18N20E 1E0420
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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O220AB
PHP130N03T
BUK7506-30
PHP130N03T
PHP18N20E
1E0420
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pj 72 diode
Abstract: pj 67 diode W1872 diode pj 72
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP18N20E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
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PHP18N20E
T0220AB
pj 72 diode
pj 67 diode
W1872
diode pj 72
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buk7530-55
Abstract: mosfet-n SOT166 TOPFET buk7530
Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263
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56-800A
BUK446-800A
BUK456-800B
BUK446-800B
BUK454-800A
BUK444-800A
BUK454-800B
BUK444-800B
BUK456-1000B
BUK446-1000B
buk7530-55
mosfet-n
SOT166
TOPFET
buk7530
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T0-220AB
Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET
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BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
BUK102-50DL
BUK102-50GL
BUK102-50GS
BUK104-50L
T0-220AB
PHILIPS MOSFET igbt
mosfet switch
BUK866 4001z
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BUK444-200
Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
Text: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50
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7-800B
BUK446-800B
BUK454-800A
BUK444-800A
BUK454-800B
BUK444-800B
BUK456-1OOOB
BUK446-1000B
T0220AB
OT186
BUK444-200
100a mosfet
Philips Semiconductors Selection Guide
BUK454-60H
BUK108-50DL
BUK102-50GL
BUk2
BUK44
BUK9630-55
BUK9570-55
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837 mosfet
Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET
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BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
BUK102-50DL
BUK102-50GL
BUK102-50GS
BUK104-50L
837 mosfet
912 MOSFET
T0-220AB
PHILIPS MOSFET igbt
BUK108-50DL
50SP
200b
mosfet
MOSFET 1053
mosfet handbook
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transistor 1564
Abstract: Transistor B 1566
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fietd-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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PHP18N20E
T0220AB
transistor 1564
Transistor B 1566
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PHC2300
Abstract: BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT
Text: Philips Semiconductors PowerMOS Transistors TYPE NUMBER PAGE Index TYPE NUMBER 2N7000 48 BSP110 2N7002 54 BSP120 PAGE TYPE NUMBER PAGE 203 BST84 358 208 BST86 364 BS107 60 BSP121 213 BUK100-50DL 385 BS107A 66 BSP122 219 BUK100-50GL 393 BS108 70 BSP126 221
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2N7000
2N7002
BS107
BS107A
BS108
BS170
BS250
BSH101
BSH102
BSH103
PHC2300
BSH202
200B
PHC20306
PHP45N03LT
php18n20e
BST100
PHT11N06LT
PHN203
PHB50N03LT
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ld18a
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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PHP18N20E
T0220AB
ld18a
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