2SK1758
Abstract: MEI-1202 TEA-1035
Text: DATA SHEET NEC À MOS FIELD EFFECT POWER TRANSISTOR 2SK1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K 1758 is N -channel M O S Field Effect Transistor PACKAGE DIMENSIONS in millimeters designed fo r high voltage switching applications.
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2SK1758
2SK1758
IEI-1209)
MEI-1202
TEA-1035
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PDF
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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PDF
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2SK1758
Abstract: K1758 MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K 1758 is N -channel M O S Field Effect Transistor
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OCR Scan
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2SK1758
IEI-1209)
K1758
MEI-1202
TEA-1035
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PDF
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H9510
Abstract: GB100DA60UP
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel didoes with ultrasoft reverse recovery
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Original
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GB100DA60UP
OT-227
2002/95/EC
OT-227
18-Jul-08
H9510
GB100DA60UP
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PDF
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GB100DA60UP
Abstract: No abstract text available
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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Original
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GB100DA60UP
OT-227
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GB100DA60UP
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PDF
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VS-GB100DA60UP
Abstract: No abstract text available
Text: VS-GB100DA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft
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Original
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VS-GB100DA60UP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GB100DA60UP
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PDF
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GB100DA60UP
Abstract: No abstract text available
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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Original
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GB100DA60UP
OT-227
E78996
2002/95/EC
11-Mar-11
GB100DA60UP
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PDF
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GB100DA60UP
Abstract: No abstract text available
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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Original
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GB100DA60UP
OT-227
E78996
2002/95/EC
11-Mar-11
GB100DA60UP
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PDF
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E78996 diode
Abstract: GB100DA60UP
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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Original
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GB100DA60UP
OT-227
E78996
2002/95/EC
18-Jul-08
E78996 diode
GB100DA60UP
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PDF
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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PDF
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GB100DA60UP
Abstract: GB100D 930-01
Text: GB100DA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel didoes with ultrasoft reverse recovery
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Original
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GB100DA60UP
OT-227
2002/95/EC
18-Jul-08
GB100DA60UP
GB100D
930-01
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PDF
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Untitled
Abstract: No abstract text available
Text: 6N1135/ 6N1136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • Isolation Test Voltage: 5300 VRMS Operating Temperature from -55 °C to +110 °C TTL Compatible
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Original
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6N1135/
6N1136
i179081
E52744
VDE0884)
6N1135
6N1136
6N1135-X007
D-74025
05-Jul-04
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PDF
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6N1135
Abstract: 6N1135-X007 6N1136 6N1136-X006 6N1136-X007 6N1136-X009 VDE0884
Text: 6N1135/ 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • • Operating Temperature from -55 °C to +110 °C Isolation Test Voltage: 5300 VRMS TTL Compatible
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Original
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6N1135/
6N1136
2002/95/EC
2002/96/EC
E52744
VDE0884)
E52744,
i179081
D-74025
26-Oct-04
6N1135
6N1135-X007
6N1136
6N1136-X006
6N1136-X007
6N1136-X009
VDE0884
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PDF
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Untitled
Abstract: No abstract text available
Text: 6N1135/ 6N1136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • Operating Temperature from -55 °C to +110 °C Isolation Test Voltage: 5300 VRMS TTL Compatible
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Original
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6N1135/
6N1136
i179081
E52744
VDE0884)
E52744,
D-74025
19-Jul-04
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PDF
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DIN EN 17635
Abstract: No abstract text available
Text: 6N1135/ 6N1136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • Operating Temperature from -55 °C to +110 °C Isolation Test Voltage: 5300 VRMS TTL Compatible
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Original
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6N1135/
6N1136
i179081
E52744
VDE0884)
E52744,
D-74025
16-Jul-04
DIN EN 17635
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PDF
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Untitled
Abstract: No abstract text available
Text: 6N1135/ 6N1136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • • Operating Temperature from -55 °C to +110 °C Isolation Test Voltage: 5300 VRMS TTL Compatible
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Original
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6N1135/
6N1136
2002/95/EC
2002/96/EC
i179081
E52744
VDE0884)
E52744,
D-74025
29-Jul-04
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. BFS 17P MCs 1 =B Q62702-F940 II Pin Configuration CM Marking Ordering Code Package LU Type 3=C
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BFS17P
Q62702-F940
OT-23
0535b05
fi235b05
500MHz
flE35b05
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PDF
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SMD Transistor t 06
Abstract: No abstract text available
Text: 6N1135/6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES • Operating temperature from - 55 °C to + 110 °C • Isolation test voltages: 5300 VRMS • TTL compatible NC 1 8 C VCC • High bit rates: 1.0 MBd
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Original
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6N1135/6N1136
i179081
2002/95/EC
2002/96/EC
6N1135
6N1136
08-Apr-05
SMD Transistor t 06
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PDF
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Untitled
Abstract: No abstract text available
Text: 6N1135/6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES • Operating temperature from - 55 °C to + 110 °C • Isolation test voltages: 5300 VRMS • TTL compatible NC 1 8 C VCC • High bit rates: 1.0 MBd
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Original
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6N1135/6N1136
i179081
2002/95/EC
2002/96/EC
6N1135
6N1136
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)
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Original
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6N1135,
6N1136
i179081
i179081
6N1135
6N1136
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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6N1135-X006
Abstract: TRANSISTOR SMD MARKING CODE t 04
Text: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)
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Original
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6N1135,
6N1136
i179081
2002/95/EC
2002/96/EC
i179081
6N1135
6N1136
2011/65/EU
2002/95/EC.
6N1135-X006
TRANSISTOR SMD MARKING CODE t 04
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PDF
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Untitled
Abstract: No abstract text available
Text: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)
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Original
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6N1135,
6N1136
i179081
2002/95/EC
2002/96/EC
i179081
6N1135
6N1136
11-Mar-11
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PDF
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