TRANSISTOR 1740 Search Results

TRANSISTOR 1740 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 1740 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA1444 equivalent Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992	Original	PDF	X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Untitled Abstract: No abstract text available Text: BLF8G24LS-200PN Power LDMOS transistor Rev. 1 — 20 January 2014 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance	Original	PDF	BLF8G24LS-200PN
Untitled Abstract: No abstract text available Text: BLF8G24L-200P; BLF8G24LS-200P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance	Original	PDF	BLF8G24L-200P; BLF8G24LS-200P BLF8G24L-200P LS-200P
Untitled Abstract: No abstract text available Text: BLF8G24L-200P; BLF8G24LS-200P Power LDMOS transistor Rev. 2 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance	Original	PDF	BLF8G24L-200P; BLF8G24LS-200P BLF8G24L-200P LS-200P
transistor j307 Abstract: j352 sk063 Text: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to	Original	PDF	AFT18H357--24S AFT18H357-24SR6 transistor j307 j352 sk063
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	PDF	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Untitled Abstract: No abstract text available Text: BLF2324M8LS200P Power LDMOS transistor Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	PDF	BLF2324M8LS200P
transistor 1740 Abstract: npn C 1740 Text: Continental Device India Limited Q An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON PLANAR TRANSISTOR CSC 1740 TO-92 Plastic Package General Small Signal Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	PDF	C-120 CSC1740Rev260901 transistor 1740 npn C 1740
Untitled Abstract: No abstract text available Text: Continental Device India Limited Q An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON PLANAR TRANSISTOR CSC 1740 TO-92 Plastic Package General Small Signal Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	PDF	C-120 CSC1740Rev260901
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	PDF	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Siemens 1736 Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312 Text: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for	OCR Scan	PDF	0235bG5 Q004312 BCY66 Q60203-Y66 TcaseS45Â fi23Sb05 Q0QM31? 120Hz Siemens 1736 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
Untitled Abstract: No abstract text available Text: Ordering number: EN 3173A Monolithic Digital IC LB1740 N0.3173A 8-Channel, Current-Source Output, Darlington Transistor Array The LB 1740 is an 8-channel current source output D arlington transistor array made up of PN P tran sisto rs and NPN transistors. High output drive capability for very low input c u rren t is achieved.	OCR Scan	PDF	LB1740 500mA)
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET PINNING - SOT223 PIN SYMBOL PARAMETER < N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope suitable for surface mounting. The device features very	OCR Scan	PDF	PHT8N06LT OT223 OT223.
Untitled Abstract: No abstract text available Text: T'ìRTDTb DQ1SQS7 3=15 Ordering num ber: EN 3173 _ LB1740 No.3173 Monolithic Digital IC 8-Channel, Current-Source Output, Darlington Transistor Array The LB1740 is an 8-channel current source output Darlington transistor array made up of PNP transistors	OCR Scan	PDF	LB1740 LB1740 500mA) N149TA 350mA

2SK1795 Abstract: TC-2441 Text: MOS FIELD EFFECT POWER TRANSISTOR 2SK1795 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1795 is N-channel M O S Field Effect Transistor designed for PACKAGE DIMENSIONS in m illim eters high voltage switching applications. 0 3 .0 ±0.2	OCR Scan	PDF	2SK1795 2SK1795 IEI-1209) TC-2441
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure	OCR Scan	PDF	bbS3T31 0D14T07 LAE4002S
A83A marking Abstract: 113A db 435A 95A 640 marking 113a LTE21009R LTE21009RA transistor 81 110 w 85 MARKING 41B marking code 41b Text: -7^33-0^ LTE21009R LT E 21009R A ,{ PHILIPS INTERNATIONAL StE D • 7110fi2b 0041,218 Rbfl ■ PHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich	OCR Scan	PDF	LTE21009R LTE21009RA 711002b FO-41B) LTE21009RA A83A marking 113A db 435A 95A 640 marking 113a transistor 81 110 w 85 MARKING 41B marking code 41b
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.	OCR Scan	PDF	LbS3T31 LTE21025R FO-41B)
IEC134 Abstract: LAE4002S Text: I-« N AMER P H IL IP S /D IS C R E T E OLE D • hbSBTBl 0014*107 T ■ LAE4002S MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter ciass-A linear power amplifiers up to 4 GHz. Diffused emitter . ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure	OCR Scan	PDF	LAE4002S OT-100. L-13-â Zo-50n IEC134 LAE4002S
equivalent transistor 2sk Abstract: 2sc 1740 TRANSISTOR equivalent sanyo tuner npn C 1740 sanyo 2sc 1740 transistor equivalent transistor TO 2sk transistor 2sk Text: Ordering number: ENN7021 \| TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET _FC21 SANYO/ High-Frequency Amplifier, AM tuner RF Amplifier Applications Package Dimensions Features • T h e F C 2 l contains both a 2SK 1740 equivalent chip	OCR Scan	PDF	ENN7021 equivalent transistor 2sk 2sc 1740 TRANSISTOR equivalent sanyo tuner npn C 1740 sanyo 2sc 1740 transistor equivalent transistor TO 2sk transistor 2sk
A933A Abstract: No abstract text available Text: Transistors General Purpose Transistor -50V, 0.15A 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS •F e a tu re s 1 ) Excellent •E x te rn a l dim ensions (Units: mm) ïife linearity. 2) Com plem ents the 2SC2412K/ 2SA1576A 2SA1037AK 2SC40S1 /2SC 4617/2SC 1740S.	OCR Scan	PDF	2SA1037AK 2SA1576A 2SA1774 2SA933AS 2SA1576A 2SC2412K/ 2SC40S1 4617/2SC 1740S. A933A

TRANSISTOR 1740 Search Results

TRANSISTOR 1740 Result Highlights (5)

TRANSISTOR 1740 Datasheets Context Search

2SA1444 equivalent

Untitled

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transistor j307

tip122 tip127 audio amp schematic

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transistor 1740

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la 4440 amplifier circuit diagram 300 watt

Siemens 1736

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2SK1795

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

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A83A marking

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IEC134

equivalent transistor 2sk

A933A