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    TRANSISTOR 160V 1.5A NPN Search Results

    TRANSISTOR 160V 1.5A NPN Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 160V 1.5A NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1918

    Abstract: No abstract text available
    Text: 2SD1918 Datasheet NPN 1.5A 160V Middle Power Transistor lOutline Parameter Value VCEO IC 160V 1.5A CPT3 Collector Base Emitter 2SD1918 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V


    Original     		PDF 2SD1918 SC-63) OT-428> 2SB1275 D1918 R1102A D1918

    B1275

    Abstract: No abstract text available
    Text: 2SB1275 Datasheet PNP -1.5A -160V Middle Power Transistor lOutline Parameter Value VCEO IC -160V -1.5A CPT3 Collector Base Emitter 2SB1275 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V


    Original     		PDF 2SB1275 -160V -160V SC-63) OT-428> 2SD1918 B1275 B1275

    2SC1502

    Abstract: a1507 2SC 143 SANYO C3902 2SA1507 2SC3902 TO126ML 2sa1507 Sanyo Semiconductor transistor 160v 1.5a pnp
    Text: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity


    Original     		PDF EN2101E 2SA1507/2SC3902 2SA1507 2SC1502 a1507 2SC 143 SANYO C3902 2SA1507 2SC3902 TO126ML 2sa1507 Sanyo Semiconductor transistor 160v 1.5a pnp

    Untitled

    Abstract: No abstract text available
    Text: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity


    Original     		PDF 2SA1507/2SC3902 EN2101E 2SA1507

    d1857a

    Abstract: D1857 BTD1857AJ3
    Text: CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTD1857AJ3 Spec. No. : C855J3 Issued Date : 2004.10.04 Revised Date :2009.02.04 Page No. : 1/6 160V 1.5A 310mΩ Description • High BVCEO • High current capability • Complementary to BTB1236AJ3


    Original     		PDF BTD1857AJ3 C855J3 BTB1236AJ3 O-252 UL94V-0 d1857a D1857 BTD1857AJ3

    c4027

    Abstract: No abstract text available
    Text: Ordering number : EN2262F 2SA1552/2SC4027 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applications • Converters, inverters, color TV audio output Features • • • High voltage and large current capacity


    Original     		PDF EN2262F 2SA1552/2SC4027 2SA1552 2SC4027-applied 2SA1552 c4027

    2sc3902

    Abstract: 2sa1507 EN2101E
    Text: Ordering number : EN2101E 2SA1507/2SC3902 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Color TV audio output, converters, inverters Features • • • Large current capacity • Adoption of FBET and MBIT process


    Original     		PDF EN2101E 2SA1507/2SC3902 O-126ML 2SA1507 180where 2sc3902 2sa1507 EN2101E

    C4614

    Abstract: No abstract text available
    Text: Ordering number : EN3578A 2SA1770/2SC4614 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF EN3578A 2SA1770/2SC4614 2SA1770 C4614

    transistor E11

    Abstract: No abstract text available
    Text: TSD1858 Low Vcesat NPN Transistor TO-251 IPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 180V BVCEO 160V IC 1.5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) High BVCEO Part No.


    Original     		PDF TSD1858 O-251 100mA TSD1858CH 75pcs transistor E11

    2SA2005

    Abstract: 2SA200 2SC5511 transistor 160v 1.5a pnp transistor 160v 1.5a npn 2SA20
    Text: 2SC5511 Transistors For Audio Amplifier output - TV Velosity Modulation 160V, 1.5A 2SC5511 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Electrical characteristics of DC current gain hFE is flat.


    Original     		PDF 2SC5511 O-220FN 150MHz, 100MHz) 2SA2005 2SA2005 2SA200 2SC5511 transistor 160v 1.5a pnp transistor 160v 1.5a npn 2SA20

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s


    Original     		PDF EN2007C 2SA1419/2SC3649 2SA1419 250mm2

    transistor 160v 1.5a npn

    Abstract: BUX11 250V transistor npn 2a transistor IC 12A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX11 DESCRIPTION •Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability APPLICATIONS ·Motor control ·Linear and switching industrial equipment


    Original     		PDF BUX11 10MHz transistor 160v 1.5a npn BUX11 250V transistor npn 2a transistor IC 12A

    transistor 160v 1.5a npn

    Abstract: BUV11 transistor IC 12A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV11 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 0.6V (Max.) @IC= 6A ·High Switching Speed ·High DC Current Gain: hFE= 20(Min.) @IC= 6A APPLICATIONS ·Designed for high current, high speed, high power


    Original     		PDF BUV11 transistor 160v 1.5a npn BUV11 transistor IC 12A

    BUX11

    Abstract: LE17
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX11 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO


    Original     		PDF BUX11 O-204AA) BUX11 LE17

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223 „ APPLICATIONS * Low frequency power amplifier complementary pair with UTC 1 1 2SB649/A TO-251 TO-252 1 1 TO-92NL TO-92 1 TO-126 „


    Original     		PDF 2SD669/A OT-89 OT-223 2SB649/A O-251 O-252 O-92NL O-126 O-126C 2SD669x-x-AA3-R

    2SD669AL

    Abstract: 2SD669A ta7250 2SD669 transistor 2sd669 1.5A NPN power transistor TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223 „ APPLICATIONS * Low frequency power amplifier complementary pair with UTC 1 1 2SB649/A TO-251 TO-252 1 1 TO-92NL TO-92 1 1 TO-126 TO-126C


    Original     		PDF 2SD669/A OT-89 OT-223 2SB649/A O-251 O-252 O-92NL O-126 O-126C 2SD669L/2SD669AL 2SD669AL 2SD669A ta7250 2SD669 transistor 2sd669 1.5A NPN power transistor TO-92

    T6C transistor

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223 „ APPLICATIONS * Low frequency power amplifier complementary pair with UTC 1 1 2SB649/A TO-251 TO-252 1 1 TO-92NL TO-92 1 TO-126 „


    Original     		PDF 2SD669/A OT-223 OT-89 2SB649/A O-251 O-252 O-92NL O-126 O-126C 2SD669xL-x-AA3-R T6C transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SD669/A NPN SILICON TRANSISTOR BI POLAR POWER GEN ERAL PU RPOSE T RAN SI ST OR ̈ APPLI CAT I ON S * Low frequency power amplifier complementary pair with UTC 2SB649/A ̈ ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free


    Original     		PDF 2SD669/A 2SB649/A 2SD669xL-x-AA3-R 2SD669xG-x-AA3-R 2SD669xL-x-AB3-R 2SD669xG-x-AB3-R 2SD669xL-x-T60-K 2SD669xG-x-T60-K 2SD669xL-x-T6C-K 2SD669xG-x-T6C-K

    VCEO160V

    Abstract: HS669A 14014B 2SD669A transistor 160v 1.5a npn
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 对应国外型号 2SD669A HS669A █ 主要用途 █ 外形图及引脚排列 作低频功率放大。 █ 极限值（Ta=25℃） TO-126 T stg ——贮存温度………………………………… -55~150℃


    Original     		PDF 2SD669A HS669A O-126 10mAREB= 150mA 500mA 500mA, VCEO160V HS669A 14014B 2SD669A transistor 160v 1.5a npn

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR „ APPLICATIONS 1 1 SOT-89 SOT-223 1 1 TO-92 * Low frequency power amplifier complementary pair with UTC 2SB649/A TO-92NL 1 1 TO-126 TO-126C 1 1 TO-251


    Original     		PDF 2SD669/A OT-89 OT-223 2SB649/A O-92NL O-126 O-126C O-251 O-252 2SD669L/2SD669AL

    transistor 669A

    Abstract: H669A 2SD669AHS669AH669A C117AJ-00 669A H669 C117A 2SD669A HS669A transistor 160v 1.5a npn
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 669A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C117AJ-00 芯片厚度：240±20µm 管芯尺寸：1170x1170µm 2 焊位尺寸：B 极 272×192µm 2；E 极 226×298µm 2


    Original     		PDF 100mm C117AJ-00 2SD669AHS669AH669A O-126TO-126ML 10mAIB 160VIE 150mA 500mA transistor 669A H669A 2SD669AHS669AH669A C117AJ-00 669A H669 C117A 2SD669A HS669A transistor 160v 1.5a npn

    transistor 669A

    Abstract: H669A 2SD669AHS669AH669A 669A 2SD669 2SD669A H669 C080BJ-00 transistor 160v 1.5a npn HS669A
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 669A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C080BJ-00 芯片厚度：240±20µm 管芯尺寸：800x800µm 2 焊位尺寸：B 极 124×124µm 2；E 极 221×110µm 2


    Original     		PDF 100mm C080BJ-00 2SD669AHS669AH669A O-126TO-126ML 10mAIB 160VIE 150mA 500mA transistor 669A H669A 2SD669AHS669AH669A 669A 2SD669 2SD669A H669 C080BJ-00 transistor 160v 1.5a npn HS669A

    2SD669Al

    Abstract: 2SD669A 2SD669 transistor 2sd669 2SD669-X-AA3-R 2SD669L transistor 160v 1.5a npn 2sd669ag-x-aa3-r 2SD669AG 1.5A NPN power transistor TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR „ APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A Lead-free: 2SD669L/2SD669AL Halogen-free: 2SD669G/2SD669AG „ ORDERING INFORMATION


    Original     		PDF 2SD669/A 2SB649/A 2SD669L/2SD669AL 2SD669G/2SD669AG 2SD669-x-AA3-R 2SD669-x-AB3-R 2SD669-x-T60-K 2SD669-x-T6C-K 2SD669-x-T92-B 2SD669-x-T92-K 2SD669Al 2SD669A 2SD669 transistor 2sd669 2SD669-X-AA3-R 2SD669L transistor 160v 1.5a npn 2sd669ag-x-aa3-r 2SD669AG 1.5A NPN power transistor TO-92

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 APPLICATION * Low frequency power amplifier * Complementary pair with UTC 2SB649/A SOT-89 *Pb-free plating product number: 2SD669/AL ORDERING INFORMATION


    Original     		PDF 2SD669/A 2SB649/A OT-89 2SD669/AL 2SD669-x-AB3-F-R 2SD669L-x-AB3-F-R 2SD669A-x-AB3-F-R 2SD669AL-x-AB3-F-R