D1918
Abstract: No abstract text available
Text: 2SD1918 Datasheet NPN 1.5A 160V Middle Power Transistor lOutline Parameter Value VCEO IC 160V 1.5A CPT3 Collector Base Emitter 2SD1918 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V
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2SD1918
SC-63)
OT-428>
2SB1275
D1918
R1102A
D1918
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B1275
Abstract: No abstract text available
Text: 2SB1275 Datasheet PNP -1.5A -160V Middle Power Transistor lOutline Parameter Value VCEO IC -160V -1.5A CPT3 Collector Base Emitter 2SB1275 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V
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2SB1275
-160V
-160V
SC-63)
OT-428>
2SD1918
B1275
B1275
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2SC1502
Abstract: a1507 2SC 143 SANYO C3902 2SA1507 2SC3902 TO126ML 2sa1507 Sanyo Semiconductor transistor 160v 1.5a pnp
Text: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity
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EN2101E
2SA1507/2SC3902
2SA1507
2SC1502
a1507
2SC 143 SANYO
C3902
2SA1507
2SC3902
TO126ML
2sa1507 Sanyo Semiconductor
transistor 160v 1.5a pnp
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Untitled
Abstract: No abstract text available
Text: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity
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2SA1507/2SC3902
EN2101E
2SA1507
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d1857a
Abstract: D1857 BTD1857AJ3
Text: CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTD1857AJ3 Spec. No. : C855J3 Issued Date : 2004.10.04 Revised Date :2009.02.04 Page No. : 1/6 160V 1.5A 310mΩ Description • High BVCEO • High current capability • Complementary to BTB1236AJ3
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BTD1857AJ3
C855J3
BTB1236AJ3
O-252
UL94V-0
d1857a
D1857
BTD1857AJ3
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c4027
Abstract: No abstract text available
Text: Ordering number : EN2262F 2SA1552/2SC4027 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applications • Converters, inverters, color TV audio output Features • • • High voltage and large current capacity
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EN2262F
2SA1552/2SC4027
2SA1552
2SC4027-applied
2SA1552
c4027
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2sc3902
Abstract: 2sa1507 EN2101E
Text: Ordering number : EN2101E 2SA1507/2SC3902 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Color TV audio output, converters, inverters Features • • • Large current capacity • Adoption of FBET and MBIT process
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EN2101E
2SA1507/2SC3902
O-126ML
2SA1507
180where
2sc3902
2sa1507
EN2101E
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C4614
Abstract: No abstract text available
Text: Ordering number : EN3578A 2SA1770/2SC4614 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications Absolute Maximum Ratings at Ta=25°C
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EN3578A
2SA1770/2SC4614
2SA1770
C4614
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transistor E11
Abstract: No abstract text available
Text: TSD1858 Low Vcesat NPN Transistor TO-251 IPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 180V BVCEO 160V IC 1.5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) High BVCEO Part No.
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TSD1858
O-251
100mA
TSD1858CH
75pcs
transistor E11
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2SA2005
Abstract: 2SA200 2SC5511 transistor 160v 1.5a pnp transistor 160v 1.5a npn 2SA20
Text: 2SC5511 Transistors For Audio Amplifier output - TV Velosity Modulation 160V, 1.5A 2SC5511 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Electrical characteristics of DC current gain hFE is flat.
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2SC5511
O-220FN
150MHz,
100MHz)
2SA2005
2SA2005
2SA200
2SC5511
transistor 160v 1.5a pnp
transistor 160v 1.5a npn
2SA20
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
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EN2007C
2SA1419/2SC3649
2SA1419
250mm2
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transistor 160v 1.5a npn
Abstract: BUX11 250V transistor npn 2a transistor IC 12A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX11 DESCRIPTION •Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability APPLICATIONS ·Motor control ·Linear and switching industrial equipment
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BUX11
10MHz
transistor 160v 1.5a npn
BUX11
250V transistor npn 2a
transistor IC 12A
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transistor 160v 1.5a npn
Abstract: BUV11 transistor IC 12A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV11 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 0.6V (Max.) @IC= 6A ·High Switching Speed ·High DC Current Gain: hFE= 20(Min.) @IC= 6A APPLICATIONS ·Designed for high current, high speed, high power
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BUV11
transistor 160v 1.5a npn
BUV11
transistor IC 12A
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BUX11
Abstract: LE17
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX11 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO
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BUX11
O-204AA)
BUX11
LE17
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 1 1 2SB649/A TO-251 TO-252 1 1 TO-92NL TO-92 1 TO-126
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2SD669/A
OT-89
OT-223
2SB649/A
O-251
O-252
O-92NL
O-126
O-126C
2SD669x-x-AA3-R
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2SD669AL
Abstract: 2SD669A ta7250 2SD669 transistor 2sd669 1.5A NPN power transistor TO-92
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 1 1 2SB649/A TO-251 TO-252 1 1 TO-92NL TO-92 1 1 TO-126 TO-126C
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2SD669/A
OT-89
OT-223
2SB649/A
O-251
O-252
O-92NL
O-126
O-126C
2SD669L/2SD669AL
2SD669AL
2SD669A
ta7250
2SD669
transistor 2sd669
1.5A NPN power transistor TO-92
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T6C transistor
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 1 1 2SB649/A TO-251 TO-252 1 1 TO-92NL TO-92 1 TO-126
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2SD669/A
OT-223
OT-89
2SB649/A
O-251
O-252
O-92NL
O-126
O-126C
2SD669xL-x-AA3-R
T6C transistor
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2SD669/A NPN SILICON TRANSISTOR BI POLAR POWER GEN ERAL PU RPOSE T RAN SI ST OR ̈ APPLI CAT I ON S * Low frequency power amplifier complementary pair with UTC 2SB649/A ̈ ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free
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2SD669/A
2SB649/A
2SD669xL-x-AA3-R
2SD669xG-x-AA3-R
2SD669xL-x-AB3-R
2SD669xG-x-AB3-R
2SD669xL-x-T60-K
2SD669xG-x-T60-K
2SD669xL-x-T6C-K
2SD669xG-x-T6C-K
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VCEO160V
Abstract: HS669A 14014B 2SD669A transistor 160v 1.5a npn
Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 对应国外型号 2SD669A HS669A █ 主要用途 █ 外形图及引脚排列 作低频功率放大。 █ 极限值（Ta=25℃） TO-126 T stg ——贮存温度………………………………… -55~150℃
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2SD669A
HS669A
O-126
10mAREB=
150mA
500mA
500mA,
VCEO160V
HS669A
14014B
2SD669A
transistor 160v 1.5a npn
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS 1 1 SOT-89 SOT-223 1 1 TO-92 * Low frequency power amplifier complementary pair with UTC 2SB649/A TO-92NL 1 1 TO-126 TO-126C 1 1 TO-251
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2SD669/A
OT-89
OT-223
2SB649/A
O-92NL
O-126
O-126C
O-251
O-252
2SD669L/2SD669AL
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transistor 669A
Abstract: H669A 2SD669AHS669AH669A C117AJ-00 669A H669 C117A 2SD669A HS669A transistor 160v 1.5a npn
Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 669A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C117AJ-00 芯片厚度：240±20µm 管芯尺寸：1170x1170µm 2 焊位尺寸：B 极 272×192µm 2；E 极 226×298µm 2
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100mm
C117AJ-00
2SD669AHS669AH669A
O-126TO-126ML
10mAIB
160VIE
150mA
500mA
transistor 669A
H669A
2SD669AHS669AH669A
C117AJ-00
669A
H669
C117A
2SD669A
HS669A
transistor 160v 1.5a npn
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transistor 669A
Abstract: H669A 2SD669AHS669AH669A 669A 2SD669 2SD669A H669 C080BJ-00 transistor 160v 1.5a npn HS669A
Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 669A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C080BJ-00 芯片厚度：240±20µm 管芯尺寸：800x800µm 2 焊位尺寸：B 极 124×124µm 2；E 极 221×110µm 2
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100mm
C080BJ-00
2SD669AHS669AH669A
O-126TO-126ML
10mAIB
160VIE
150mA
500mA
transistor 669A
H669A
2SD669AHS669AH669A
669A
2SD669
2SD669A
H669
C080BJ-00
transistor 160v 1.5a npn
HS669A
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2SD669Al
Abstract: 2SD669A 2SD669 transistor 2sd669 2SD669-X-AA3-R 2SD669L transistor 160v 1.5a npn 2sd669ag-x-aa3-r 2SD669AG 1.5A NPN power transistor TO-92
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A Lead-free: 2SD669L/2SD669AL Halogen-free: 2SD669G/2SD669AG ORDERING INFORMATION
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2SD669/A
2SB649/A
2SD669L/2SD669AL
2SD669G/2SD669AG
2SD669-x-AA3-R
2SD669-x-AB3-R
2SD669-x-T60-K
2SD669-x-T6C-K
2SD669-x-T92-B
2SD669-x-T92-K
2SD669Al
2SD669A
2SD669
transistor 2sd669
2SD669-X-AA3-R
2SD669L
transistor 160v 1.5a npn
2sd669ag-x-aa3-r
2SD669AG
1.5A NPN power transistor TO-92
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 APPLICATION * Low frequency power amplifier * Complementary pair with UTC 2SB649/A SOT-89 *Pb-free plating product number: 2SD669/AL ORDERING INFORMATION
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2SD669/A
2SB649/A
OT-89
2SD669/AL
2SD669-x-AB3-F-R
2SD669L-x-AB3-F-R
2SD669A-x-AB3-F-R
2SD669AL-x-AB3-F-R
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