RF TRANSISTOR 10 GHZ low noise
Abstract: motorola rf Power Transistor RF POWER TRANSISTOR NPN, motorola ultra low noise NPN transistor
Text: MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70
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MBC13900
RF TRANSISTOR 10 GHZ low noise
motorola rf Power Transistor
RF POWER TRANSISTOR NPN, motorola
ultra low noise NPN transistor
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Motorola
Abstract: MBC13900 MOTOROLA TRANSISTOR 318M
Text: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70
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MBC13900PP/D
MBC13900
MBC13900
Motorola
MOTOROLA TRANSISTOR
318M
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Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR NE663M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz • •
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NE663M04
IS21EI2
OT-343
NE663M04
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Ericsson 20082
Abstract: 20082 PTB 20082
Text: e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion
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1-877-GOLDMOS
1301-PTB
Ericsson 20082
20082
PTB 20082
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Ericsson 20082
Abstract: No abstract text available
Text: e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion
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1-877-GOLDMOS
1301-PTB
Ericsson 20082
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a 4x transistor
Abstract: MOTOROLA TRANSISTOR 318M MBC13900 motorola rf Power Transistor motorola sps transistor
Text: Freescale Semiconductor, Inc. Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series Freescale Semiconductor, Inc. NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using
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MBC13900PP/D
MBC13900
MBC13900
a 4x transistor
MOTOROLA TRANSISTOR
318M
motorola rf Power Transistor
motorola sps transistor
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motorola rf Power Transistor
Abstract: transistor ghz
Text: MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70
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MBC13900
MBC13900
motorola rf Power Transistor
transistor ghz
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BFG425W
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1998 Mar 11 2010 Sep 15 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING • Very high power gain PIN
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BFG425W
R77/05/pp13
BFG425W
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"MARKING CODE P5"
Abstract: BFG425W transistor nf 37
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1998 Mar 11 2010 Sep 15 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING • Very high power gain
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BFG425W
R77/05/pp13
"MARKING CODE P5"
BFG425W
transistor nf 37
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sot-343 as
Abstract: a 4x transistor MOTOROLA TRANSISTOR SOT-343 318M MBC13900 motorola sps transistor 3AA2
Text: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70
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MBC13900PP/D
MBC13900
MBC13900
sot-343 as
a 4x transistor
MOTOROLA TRANSISTOR
SOT-343
318M
motorola sps transistor
3AA2
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1617AB15
Abstract: BVces
Text: 1617AB15 15 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1617AB15 is a COMMON EMITTER transistor capable of providing 15 Watts PEP of Class AB, RF output power over the band 1600 - 1700 MHz. This transistor is specifically designed for SATCOM BASE STATION
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1617AB15
1617AB15
BVces
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SCA-15
Abstract: No abstract text available
Text: SCA-15 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices SCA-15 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases
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SCA-15
SCA-15
27dBm.
27dBm
EDS-102424
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Untitled
Abstract: No abstract text available
Text: Product Description SCA-15 Stanford Microdevices’ SCA-15 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between
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SCA-15
27dBm.
100mA
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120C
Abstract: SCA-15
Text: Product Description SCA-15 Stanford Microdevices’ SCA-15 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between
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SCA-15
SCA-15
27dBm.
31mil
120C
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Untitled
Abstract: No abstract text available
Text: BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits
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BFG325/XR
OT143R
BFG325
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Untitled
Abstract: No abstract text available
Text: BFG310/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits
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BFG310/XR
OT143R
BFG310
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transistor l2
Abstract: transistor bf 194
Text: BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits
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BFG325/XR
OT143R
BFG325
transistor l2
transistor bf 194
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Ericsson 20082
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion
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Collector-91
Ericsson 20082
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Ericsson 20082
Abstract: 15W-class
Text: ERICSSON ^ PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 Watts linear output power, it may be used for both CW and PEP applications.
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Untitled
Abstract: No abstract text available
Text: SCA-15 Product Description Stanford M icrodevices’ SCA-15 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perform ance up to 3 GHz. The heterojunction increases
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SCA-15
27dBm.
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Untitled
Abstract: No abstract text available
Text: iS Stanford Microdevices Product Description SCA-15 Stanford M icrodevices’ SCA-15 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases
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SCA-15
SCA-15
27dBm.
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20082
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20082 15 Watts, 1800 - 2000 MHz Cellular Radio Power Transistor Key Features Description Specified 10 Watts linear power P-idB@ 15 Watts, .8 - 2.0 GHz Class AB Characteristics Collector Efficiency 55% @ 100 W CW Gold Metallization Silicon Nitride Passjvated
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Untitled
Abstract: No abstract text available
Text: èSl Stanford Microdevices SCA-15 Product Description Stanford M icrodevices’ SCA-15 is a high perform ance Galliu Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases
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SCA-15
27dBm.
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2015M
Abstract: 2015M-2
Text: 0182998,. ACRI AN, INC 0D D 1414 2015M D ES C R IP TIO N 15 WATTS - 28 VOLTS 2 OHz The 2015M is an internally matched, common base transistor ' capable of providing 15 Watts of C W RF output power across the 1000-2000 M Hz band. This transistor is specifically designed
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2015M
600mA
2015M
2015M-2
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