Untitled
Abstract: No abstract text available
Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 2 — 20 October 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to
|
Original
|
BLF7G20L-90P;
BLF7G20LS-90P
to1525
ACPR400k
ACPR600k
BLF7G20L-90P
7G20LS-90P
|
PDF
|
W13B
Abstract: No abstract text available
Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 2 — 20 October 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to
|
Original
|
BLF7G20L-90P;
BLF7G20LS-90P
to1525
ACPR400k
ACPR600k
BLF7G20L-90P
7G20LS-90P
W13B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm High current type (IC (max) = 800mA)
|
Original
|
RN1421â
RN1427
RN1421
RN1422
RN1423
RN1424
RN1425
RN1426
800mA)
|
PDF
|
SOT 363 marking 67
Abstract: MARKING 67 SOT-363 sot-363 MARKING MUN5136DW1T1
Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
|
Original
|
MUN5111DW1T1
OT-363
SOT 363 marking 67
MARKING 67 SOT-363
sot-363 MARKING
MUN5136DW1T1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC (max) = 800mA)
|
Original
|
RN1421â
RN1427
RN1421,
RN1422,
RN1423,
RN1424
RN1425,
RN1426,
800mA)
|
PDF
|
RN1424
Abstract: RN1421 RN1422 RN1423 RN1425 RN1426 RN1427 RN2421 RN2427
Text: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC (max) = 800mA)
|
Original
|
RN1421RN1427
RN1421
RN1422
RN1423
RN1424
RN1425
RN1426
RN1427
800mA)
RN2421
RN1424
RN1427
RN2427
|
PDF
|
BUF654
Abstract: transistor 9747
Text: BUF654 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
|
Original
|
BUF654
D-74025
18-Jul-97
BUF654
transistor 9747
|
PDF
|
2a1100
Abstract: BUF620
Text: BUF620 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
|
Original
|
BUF620
D-74025
18-Jul-97
2a1100
BUF620
|
PDF
|
BUF636A
Abstract: 5V rectifier ic
Text: BUF636A Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
|
Original
|
BUF636A
D-74025
26-Sep-97
BUF636A
5V rectifier ic
|
PDF
|
BUF742
Abstract: telefun
Text: BUF742 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
|
Original
|
BUF742
D-74025
18-Jul-97
BUF742
telefun
|
PDF
|
BUF642
Abstract: No abstract text available
Text: BUF642 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
|
Original
|
BUF642
D-74025
18-Jul-97
BUF642
|
PDF
|
BUF660
Abstract: No abstract text available
Text: BUF660 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
|
Original
|
BUF660
D-74025
18-Jul-97
BUF660
|
PDF
|
TP 9212
Abstract: BUF744
Text: BUF744 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
|
Original
|
BUF744
D-74025
18-Jul-97
TP 9212
BUF744
|
PDF
|
BUF630
Abstract: No abstract text available
Text: BUF630 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
|
Original
|
BUF630
D-74025
18-Jul-97
BUF630
|
PDF
|
|
|
ic 8853
Abstract: BUF650
Text: BUF650 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
|
Original
|
BUF650
D-74025
18-Jul-97
ic 8853
BUF650
|
PDF
|
BUF653
Abstract: ELECTRONIC BALLAST transistor DIAGRAM
Text: BUF653 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
|
Original
|
BUF653
D-74025
18-Jul-97
BUF653
ELECTRONIC BALLAST transistor DIAGRAM
|
PDF
|
IC02A
Abstract: BUF7216
Text: BUF7216 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
|
Original
|
BUF7216
D-74025
08-Oct-97
IC02A
BUF7216
|
PDF
|
BUF644
Abstract: No abstract text available
Text: BUF644 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
|
Original
|
BUF644
D-74025
18-Jul-97
BUF644
|
PDF
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
PDF
|
buf708
Abstract: No abstract text available
Text: BUF708D Vishay Telefunken Preliminary Specification Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses •
|
OCR Scan
|
BUF708D
20-Oct-98
20-Oct-99
buf708
|
PDF
|
1427H
Abstract: PA1427H NEC PA1427H IEI-1213 DARLINGTON MANUAL MIL GRADE TRANSISTOR ARRAY MEI-1202 MF-1134 UPA1427 PA1427
Text: DATA SHEET «PAI427 SILICON TRANSISTOR ARRAY PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N The ¿¿PA1427 is PNP silico n e p ita xial D a rlin g to n P ow er T ra n sisto r
|
OCR Scan
|
PAI427
uPA1427
1427H
PA1427H
NEC PA1427H
IEI-1213
DARLINGTON MANUAL
MIL GRADE TRANSISTOR ARRAY
MEI-1202
MF-1134
PA1427
|
PDF
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
|
PDF
|
Philips FA 564
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures
|
OCR Scan
|
BFT93W
OT323
BFT93W
BFT93.
MBC870
OT323.
711002b.
Philips FA 564
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BUF7312 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation
|
OCR Scan
|
BUF7312
22-Jul-99
|
PDF
|
