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    TRANSISTOR 13W Search Results

    TRANSISTOR 13W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 13W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


    Original     		PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2226M80 Preliminary TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2226M80 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.25-2.55 GHz. While operating


    Original     		PDF IB2226M80 IB2226M80 IB2226M80-REV-PR1-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: PD - 95782A IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 5782A IRG4BC20W-SPbF 150kHz EIA-418.

    TACAN transistor

    Abstract: No abstract text available
    Text: MS2209 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION Features • · · · · REFRACTORY/GOLD METALIZATION LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY EMITTER SITE BALLASTED DESCRIPTION: THE MS2209 AVIONICS POWER TRANSISTOR IS A BROADBAND,


    Original     		PDF MS2209 MS2209 100ns 10msec, TACAN transistor

    Untitled

    Abstract: No abstract text available
    Text: PD - 95782A IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 5782A IRG4BC20W-SPbF 150kHz EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95782 IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC20W-SPbF 150kHz EIA-418.

    IRF530S

    Abstract: No abstract text available
    Text: PD - 95782 IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC20W-SPbF 150kHz EIA-418. IRF530S

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20SPbF O-220AB O-220AB O-220AB.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5639A IRG4BC20SPbF O-220AB O-220AB I4BC20SPbF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5639A IRG4BC20SPbF O-220AB O-220AB

    IRF 042

    Abstract: IRG4BC20UDPBF
    Text: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 4909A IRG4BC20UDPbF O-220AB IRF 042 IRG4BC20UDPBF

    555 triangular wave

    Abstract: IRG4BC20U
    Text: PD - 9.1448C IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 1448C IRG4BC20U O-220AB O-220AB 555 triangular wave IRG4BC20U

    Untitled

    Abstract: No abstract text available
    Text: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 4909A IRG4BC20UDPbF O-220AB

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. Dimension in mm 9.1 ± 0 . 7


    OCR Scan     		PDF DG17S24 2SC1944 2SC1944 27MHz, 27MHz

    27mhz rf ic

    Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,


    OCR Scan     		PDF 2SC1944 2SC1944 27MHz, T0-220 27MHz 27mhz rf ic T30 transistor 27mhz transistor 27mhz rf amplifier T-30

    2SC3133

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3133 NPN EPITAXIAL PLANAR TYP E DISCRIPTION 2SC3133 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in HF band mobile radio applications. FEATURES • • • • • High power gain: Gpe > 1 4 d B


    OCR Scan     		PDF 2SC3133 2SC3133 27MHz,

    2SC3133

    Abstract: 27mhz rf ic TRANSISTOR 1P 1P H transistor 27mhz transistor RF POWER TRANSISTOR NPN
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC 3133 NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3133 is a silicon NPN ep itaxia l planar type transistor Dimensions i designed fo r RF pow er am plifiers in HF band m obile radio applications. 9.1 ± 0 . 7


    OCR Scan     		PDF 2SC3133 2SC3133 27mhz rf ic TRANSISTOR 1P 1P H transistor 27mhz transistor RF POWER TRANSISTOR NPN

    Untitled

    Abstract: No abstract text available
    Text: L BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor M arking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLIN E DETAILS A LL DIM ENSIONS IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 • COLLECTOR


    OCR Scan     		PDF BCW66F, BCW66G BCW66H 180put

    2SC2783

    Abstract: VC-80 Series uhf 13W amplifier
    Text: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 UHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm 1R4±Q5 Output Power : Po = 40W Min. (f = 470MHz, V e e = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL


    OCR Scan     		PDF 2SC2783 470MHz, 2-13C1A 470MHz 961001EAA2' 2SC2783 VC-80 Series uhf 13W amplifier

    2sc2783

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. ia4±a5 Output Power : Po = 40W Min. (f=470MHz, V cc = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC2783 470MHz, 2-13C1A 961001EAA2' 2sc2783

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 78 3 UHF BAND POWER AMPLIFIER APPLICATIONS • U n it in mm 1 8 .4 ± Q 5 Output Power : Po = 40W Min. (f= 470MHz, VCC = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC2783 470MHz, 2-13C1A