TRANSISTOR 139 BF Search Results

TRANSISTOR 139 BF Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 139 BF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Transistor BFR 97 Abstract: Transistor BFR 37 Q62702-F1051 Transistor BFR 98 Text: NPN Silicon RF Transistor BFR 93P ● For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking	Original	PDF	Q62702-F1051 OT-23 Transistor BFR 97 Transistor BFR 37 Q62702-F1051 Transistor BFR 98
transistor BF 245 Abstract: bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245 Text: BF245 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFE T DE CHAMP, SILICIUM , CANAL N - LF and HF amplification Vos 30 V max IDSS 2 . 25 mA .Vg s = 0 in 3 groups Amplification BF et H F en 3 groupes 1,1 pF typ. C12S Plastic case F 139 B — See outline drawing CB-76 on last pages	OCR Scan	PDF	BF245 CB-76 C22ss 300/is transistor BF 245 bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245
transistor t05 Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058 Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 \| o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A	OCR Scan	PDF	5flMfl35g DETRdf\J515TQR 2N327A N328A 2N329A 2N330 2N726 2N863 2N939 2N945 transistor t05 N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
BC264 Abstract: transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor Text: BC 264 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EF FE T OE CHAMP, SILICIUM, CANAL N - LF amplification Amplification BF V DS 30 V max. ' dss 2 . . . . 12 mA à V GS = 0 in 4 groups en 4 groupes F 2 dB max à V q § = 0 f » 1 kHz Plastic case F 139 B — See outline drawing CB-76 on last pages	OCR Scan	PDF	CB-76 lY21sl BC264 transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor
2N4039 Abstract: 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4038 2N4221 Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES	OCR Scan	PDF	DQD0144 2N3069 2N4038 2N4339 2N3436 2N4039 2N4391 2N3437 2N4091 2N4392 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4221
2N4303 Abstract: 2N3437 2n3866 noise 2N5566 2N4039 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161 Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES	OCR Scan	PDF	DQD0144 2N3069 2N4038 2N4339 2N3436 2N4039 2N4391 2N3437 2N4091 2N4392 2N4303 2n3866 noise 2N5566 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161
bo 615 Abstract: ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126 Text: T O 92 F 139 B CB 97 (CB 76) Silicon N PN transistor», video high voilage Transistors N P N silicium, haute tension vidéo Case Type B oitie r ptot (W) 2N 5 5 50 T O 92o 2N 5551 T O 92o BF 179C T O 39 0,6 B F 257 T O 39 51 B F 258 T O 39 * B F 259 8 F 297	OCR Scan	PDF	8F299 bo 615 ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126
Transistor BFT 99 Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44 Text: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 DIN 41869 , intended for use in low-noise input and intermediate stages in RF	OCR Scan	PDF	Q0G4713 Q62702-F513 051i0 Transistor BFT 99 BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44
2f5 transistor Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75 Text: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF	OCR Scan	PDF	a23SbOS 2f5 transistor Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
transistor bd 126 Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711 Text: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe^ T -^ -O S Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available	OCR Scan	PDF	DIN41869 DIN125A 15A3DIN transistor bd 126 TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
TRANSISTOR 58050 Abstract: 58050 transistor Text: Philips Components Datasheet status Product specification date of issue April 1991 BF747 N P N 1 GHz wideband transistor FEATURES QUICK REFERENCE DATA • Stable oscillator operation • High current gain • Good thermal stability. SYMBOL DESCRIPTION The BF747 is a low cost NPN	OCR Scan	PDF	BF747 BF747 TRANSISTOR 58050 58050 transistor
KSA709 Abstract: KSC1009 Text: SAMSUNG SEMICONDUCTOR INC KSC1009 14E O \| 7^4142 OQObf l bfl fl NPN EPITAXIAL SILICON TRANSISTOR T -29-23 HIGH VOLTAGE AMPLIFIER • • • • High Collector-Base Voltage Vceo=160V Collector Current lc =700inA Collector Dissipation P c =800mW Complement to KSA709	OCR Scan	PDF	KSC1009 700inA 800mW KSA709 T-29-23 KSA709
3004x Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79 Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for	OCR Scan	PDF	fl23SbOS 0G04737 BFX55 Q60206-X55 fl235bOS 3004x Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Untitled Abstract: No abstract text available Text: 0D17ST3 4Tb m MITSUBISHI RF POWER MODULE M57793 903-905MHZ, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING D im e n s io n s in mm BLOCK DIAGRAM i P IN : <3 Pin BF IN P U T V c c i : 1 s t. D C S U P P L Y ® V c c 2 : 2nd. DC S U P P L Y ® V c c 3 : 3 rd . D C S U P P L Y	OCR Scan	PDF	0D17ST3 M57793 903-905MHZ,

3004x Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for	OCR Scan	PDF	fl23SbOS 0G04737 Q60206-X55 BFX55 23SbOS 150mA 3004x SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
dual-gate Abstract: No abstract text available Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF964S APPLICATIONS • VHF applications in television tuners. The device is also suitable for use in professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package	OCR Scan	PDF	BF964S SQT103) erT103) dual-gate
Transistor C G 774 6-1 Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1 Text: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods	OCR Scan	PDF	A23StiGS dG04hlt. Q62702-F527 235b05 000Mb22 BFQ28 Transistor C G 774 6-1 C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
BFQ28 Abstract: Q62702-F527 CJCO D 843 Transistor Text: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods	OCR Scan	PDF	fl23Sfc Q62702-F527 BFQ28 Q62702-F527 CJCO D 843 Transistor
transistor BG 23 Abstract: BF966S Text: b3E J> m bbSBTSM 007430D b4T « S I C 3 BF966S J NAPC/PHILIPS SEHICOND FOR D E T A ILE D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected,	OCR Scan	PDF	BF966S transistor BG 23 BF966S
Philips fr 153 30 Abstract: BFQ135 Text: Philips Components BFQ135 NPN 1 GHz WIDEBAND TRANSISTOR NPN transistor in a ceramic SOT172A2 package. It is prim arily intended for use in M ATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. Emitter ballasting resistors and application of gold sandwich metallization ensure an optimum	OCR Scan	PDF	OT172A2 Philips fr 153 30 BFQ135
BCW91 Abstract: bcw 91 transistor BCW91B BCW90 BCW90A H21E MA07 bcw 85 transistor BCW90B BCW90C Text: BCW 90A, B,C BCW 91 A, B NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , P LAN A R E P ITAXIAL • LF Amplification A m plifica tio n BF v CEO MOV BCW 90 160 V BCW 91 0,8 V ■c h21E 150 mA-2 V Maximum power dissipation Plastic case	OCR Scan	PDF	BCW90A, BCW91 BCW90 CB-76 bcw 91 transistor BCW91B BCW90 BCW90A H21E MA07 bcw 85 transistor BCW90B BCW90C
BFG96 Abstract: No abstract text available Text: P hilips Sem iconductor; bbS3T31 0031ST2 553 M A P X Product specification BFG96 NPN 5 GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for application in	OCR Scan	PDF	bbS3T31 0031ST2 BFG96 BFG32. OT103. BFG96
BFG34 Abstract: ON4497 TRANSISTOR 185 846 TRANSISTOR 726 Text: Philips Semiconductors Product specification -P .3 NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 3 - 0 S S ShE BFG34 TllDflEfci DDMSGSb T15 • PHIN PINNING NPN transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for wideband	OCR Scan	PDF	BFG34 OT103 ON4497) OT103. BFG34 ON4497 TRANSISTOR 185 846 TRANSISTOR 726
transistor tic 2250 Abstract: tic 2250 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRFQ17 The RF Line DIE S O U R C E SA M E AS BFQ17 IMPN Silicon High Frequency Transistor lc = 300 m A S U R F A C E M OUNT HIGH FR EQ U EN C Y TR AN SISTO R NPN SILICON . . . designed for amplifier, oscillator or frequency multiplier applications in industrial	OCR Scan	PDF	MRFQ17 BFQ17 transistor tic 2250 tic 2250

TRANSISTOR 139 BF Search Results

TRANSISTOR 139 BF Result Highlights (5)

TRANSISTOR 139 BF Datasheets Context Search

Transistor BFR 97

transistor BF 245

transistor t05

BC264

2N4039

2N4303

bo 615

Transistor BFT 99

2f5 transistor

transistor bd 126

TRANSISTOR 58050

KSA709

3004x

Untitled

3004x

dual-gate

Transistor C G 774 6-1

BFQ28

transistor BG 23

Philips fr 153 30

BCW91

BFG96

BFG34

transistor tic 2250