TRANSISTOR 13009A Search Results

TRANSISTOR 13009A Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 13009A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
HMJE13009AR Abstract: E13009a 13009a TRANSISTOR MJE13009A 13009a E 13009A NPN Transistor 400v to247 Text: HI-SINCERITY Spec. No. : HR200502 Issued Date : 2005.10.01 Revised Date : 2005.10.19 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009AR 12 Ampere NPN Silicon Power Transistor Description The HMJE13009AR is designed for high-voltage, high-speed power switching	Original	HR200502 HMJE13009AR HMJE13009AR O-247 120ns Collector-Emi20 183oC 217oC 260oC E13009a 13009a TRANSISTOR MJE13009A 13009a E 13009A NPN Transistor 400v to247	PDF
13009a Abstract: E13009a HMJE13009A MJE13009A Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.15 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching	Original	HE200206 HMJE13009A HMJE13009A O-220AB 120ns 183oC 217oC 260oC 13009a E13009a MJE13009A	PDF
E13009a Abstract: 13009a HMJE13009A 13009a TRANSISTOR mje13009a transistor 13009a Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2006.07.04 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching	Original	HE200206 HMJE13009A HMJE13009A O-220AB 120ns 183oC 217oC 260oC 10sec E13009a 13009a 13009a TRANSISTOR mje13009a transistor 13009a	PDF
KSH13009 Abstract: 13009a transistor 13009a MA1040 Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13009A 晶体管芯片 █ 芯片简介 █ 管芯示意图芯片尺寸：4 英寸（100mm）芯片代码：D400AG-00 芯片厚度：240±20µm 管芯尺寸：4000x4000µm 2 焊位尺寸：B 极 783×1100µm 2，E 极 754×1276µm 2	Original	3009A 100mm D400AG-00 KSH13009 O-220 10mAIB 12AIB 10VIC KSH13009 13009a transistor 13009a MA1040	PDF