QCA300BA60
Abstract: 675g M6 transistor
Text: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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QCA300BA60
E76102
QCA300BA60
trr200ns)
113max
IC300A,
VCEX600V
hFE750
Ic300A
675g
M6 transistor
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QCA300BA60
Abstract: No abstract text available
Text: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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QCA300BA60
E76102
QCA300BA60
trr200ns)
113max
IC300A,
VCEX600V
hFE750
Ic300A
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E2 diode
Abstract: Diode B2x
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
110TAB
94max
32max
31max
35max
400/600V
E2 diode
Diode B2x
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EVL32-055
Abstract: EVL32 transistor 120a EVL-32-055 M203 transistor 600V AC to 5V DC ic evl32-0 EVL32055 ib35a
Text: EVL32-055 120A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ 内臓 Including Free Wheeling Diode
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EVL32-055
EVL32-055
EVL32
transistor 120a
EVL-32-055
M203
transistor
600V AC to 5V DC ic
evl32-0
EVL32055
ib35a
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DIODE 10D2
Abstract: CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1
Text: MITSUBISHI MITSUBISHI NchNch IGBT IGBT CT60AM-18F CT60AM-18F INSULATED INSULATED GATE GATE BIPOLAR BIPOLAR TRANSISTOR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 4.0 ● VCES . 900V
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CT60AM-18F
20MAX.
DIODE 10D2
CT60AM-18F
102 TRANSISTOR
bipolar transistor
DIODE 10D1
IGBT 900v 60a
IGBT tail time
IGBT CT60AM
10d1
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ETN01-055
Abstract: max 550 transistor M270
Text: ETN01-055 200A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 大電流 HighCurrent が高い High DC Current Gain hFE が高い
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ETN01-055
35to40kgfcm]
ETN01-055
max 550 transistor
M270
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ct60am18b
Abstract: BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm φ 3.2 4 wr ¡VCES . 900V ¡IC . 60A
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CT60AM-18B
ct60am18b
BR 101 Transistor
IGBT 900v 60a
CT60AM-18B
diode 18B
Diode Transistor
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IRGPS46160D
Abstract: No abstract text available
Text: IRGPS46160DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C IC = 160A, TC = 100°C tSC ≥ 5 s, TJ max = 175°C E C G G VCE(on) typ. = 1.70V @ IC = 120A E Super-247 n-channel Applications • Industrial Motor Drive
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IRGPS46160DPbF
Super-247
AEC-Q101-001
AEC-Q101-005
IRGPS46160D
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IRGPS66160DPBF
Abstract: No abstract text available
Text: IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100°C tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 120A E IRGPS66160DPbF Super 247 n-channel Applications • Welding
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IRGPS66160DPbF
IRGPS66160DPbFÂ
JESD47F)
IRGPS66160DPBF
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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QM100HC-M
Abstract: QM10
Text: MITSUBISHI TRANSISTOR MODULES QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM100HC-M • • • • IC Collector current . 100A VCEX Collector-emitter voltage . 350V hFE DC current gain. 100
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QM100HC-M
QM100HC-M
QM10
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Super-247 Package
Abstract: IRG4PSC71UD
Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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1682A
IRG4PSC71UD
Super-247
O-247
Super-247 Package
IRG4PSC71UD
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Untitled
Abstract: No abstract text available
Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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1682A
IRG4PSC71UD
Super-247
O-247
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diode lt 247
Abstract: IRG4PSC71UD TB diode 1084 GE
Text: PD - 91682 IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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IRG4PSC71UD
Super-247
O-247
diode lt 247
IRG4PSC71UD
TB diode
1084 GE
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Untitled
Abstract: No abstract text available
Text: AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C C VCES = 600V IC(Nominal) = 75A
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AUIRGP4066D1
AUIRGP4066D1-E
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Untitled
Abstract: No abstract text available
Text: AOW29S50 500V 29A α MOS TM Power Transistor General Description Product Summary The AOW29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOW29S50
AOW29S50
O-262
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Untitled
Abstract: No abstract text available
Text: AOW29S50 500V 29A α MOS TM Power Transistor General Description Product Summary The AOW29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOW29S50
AOW29S50
O-262
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Untitled
Abstract: No abstract text available
Text: AOK29S50 500V 29A α MOS TM Power Transistor General Description Product Summary The AOK29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOK29S50
AOK29S50
AOK29S50L
O-247
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Untitled
Abstract: No abstract text available
Text: AOK29S50 500V 29A α MOS TM Power Transistor General Description Product Summary The AOK29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOK29S50
AOK29S50
AOK29S50L
O-247
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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STROBE FLASHER USE IGBT
Abstract: No abstract text available
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20AS-8 STROBE FLASHER USE CT20AS-8 %% • VCES . 400V • ICM .- •130A
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CT20AS-8
400fiF
lxeSi130A
STROBE FLASHER USE IGBT
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Untitled
Abstract: No abstract text available
Text: QCA300BA60 TRANSISTOR MODULE Q C A 3 0 0 B A 6 0 is a dual Darlington power transi which has series-connected ULTRA HIGH I if e , high power Darlington transistors. Each transistor has a ri leled fast recovery diode trr. 2 0 0 n s . The mounting module is electrically isolated from Semiconductor
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QCA300BA60
Tj-25Â
600mA
Q002015
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NPN Transistor 50A 400V
Abstract: SDT99504 SDT99704 SDT99904 TO114 400v 50A Transistor
Text: -JButron Devices. Inc. MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR ¿1 CONTACT METALLIZATION Base and emitter. > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:
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470mm
938mm
938mm)
508mm)
700mm)
524mm)
203mm)
O-114
10MHz
1200pF
NPN Transistor 50A 400V
SDT99504
SDT99704
SDT99904
TO114
400v 50A Transistor
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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