2N5154U3
Abstract: 2N5152U3 SMD-05
Text: JANS 2N5152U3 and JANS 2N5154U3 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152U3 and 2N5154U3 silicon transistor devices are military Radiation
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2N5152U3
2N5154U3
MIL-PRF-19500/544
2N5154U3
2N5152
2N5154.
MIL-PRF-19500/544.
SMD-05
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Untitled
Abstract: No abstract text available
Text: JANS 2N5152 and JANS 2N5154 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152 and 2N5154 silicon transistor devices are military Radiation
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2N5152
2N5154
MIL-PRF-19500/544
2N5154
2N5154.
MIL-PRF-19500/544.
O-205AD)
T4-LDS-0100,
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JANS2N5154
Abstract: 2N5154U3
Text: JANS 2N5152L and JANS 2N5154L Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152L and 2N5154L silicon transistor devices are military Radiation
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2N5152L
2N5154L
MIL-PRF-19500/544
2N5154L
2N5152
2N5154.
MIL-PRF-19500/544.
T4-LDS-0100-1,
JANS2N5154
2N5154U3
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2N5154
Abstract: 2N5154U3 MIL-PRF-19500 2N5154
Text: JANS 2N5152 and JANS 2N5154 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152 and 2N5154 silicon transistor devices are military Radiation
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2N5152
2N5154
MIL-PRF-19500/544
2N5154
2N5154.
MIL-PRF-19500/544.
O-205AD)
T4-LDS-0100,
2N5154U3
MIL-PRF-19500 2N5154
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DS7830J
Abstract: C1996 DS7830 DS7830W DS8830 DS8830N J14A N14A DS8730 DS7830J-883
Text: DS7830 DS8830 Dual Differential Line Driver General Description Features The DS7830 DS8830 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function TTL Transistor-Transistor-Logic multiple emitter inputs allow this line driver to interface with standard TTL systems
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DS7830
DS8830
DS7830J
C1996
DS7830W
DS8830N
J14A
N14A
DS8730
DS7830J-883
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2N3057A
Abstract: No abstract text available
Text: JANS_2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also
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2N3057A
MIL-PRF-19500/391
2N3057A
2N3057.
O-206AB)
T4-LDS-0262,
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Untitled
Abstract: No abstract text available
Text: JANS_2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also
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2N3057A
MIL-PRF-19500/391
2N3057A
2N3057.
O-206AB)
T4-LDS-0262,
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EN1207
Abstract: 2SC3277 EN1207A 2sc3277 transistor
Text: Ordering number:EN1207A NPN Triple Diffused Planar Silicon Transistor 2SC3277 400V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high current. · Wide ASO. · Fast switching speed. unit:mm 2022A [2SC3277] 1 : Base
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EN1207A
2SC3277
00V/10A
2SC3277]
PW300
Cycle10%
EN1207
2SC3277
EN1207A
2sc3277 transistor
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TCRT500L
Abstract: TCRT5000 sensor circuit ozone sensor Reflective Optical Sensor TCRT5000
Text: TCRT5000 L Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description TCRT5000 TCRT5000L The TCRT5000 and TCRT500L are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light. The
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TCRT5000
TCRT500L
TCRT5000L
TCRT5000
TCRT5000L
2002/95/ECany
18-Jul-08
TCRT5000 sensor circuit
ozone sensor
Reflective Optical Sensor TCRT5000
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tcrt500l
Abstract: Reflective Optical Sensor TCRT5000 TCRT5000L TCRT5000
Text: TCRT5000 L Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description TCRT5000 TCRT5000L The TCRT5000 and TCRT500L are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light. The
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TCRT5000
TCRT5000
TCRT5000L
TCRT500L
TCRT5000L
08-Apr-05
Reflective Optical Sensor TCRT5000
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JANS2N3700UB
Abstract: microsemi ub package tape reel
Text: JANS_2N3700UB Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This NPN ceramic surface mount device is RAD hard qualified for high-reliability applications.
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2N3700UB
MIL-PRF-19500/391
2N3700.
T4-LDS-0263-1,
JANS2N3700UB
microsemi ub package tape reel
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Untitled
Abstract: No abstract text available
Text: SRC1207M Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1207M
SRC1207M
O-92M
KSR-I006-002
KSR-I006-002
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Untitled
Abstract: No abstract text available
Text: SRC1207M Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1207M
O-92M
KSR-I006-001
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification bbSB'lBl DOBSlbD TST H A P X 2 GHz RF pow er transistor BLT10 N AMER PHILIPS/DISCRETE b'lE D DESCRIPTION NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation in handheld radio equipment at
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BLT10
OT103
BLT10
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SOT103
Abstract: transistor SOT103 transistor 1207 "RF Power Transistor" blt10 MSB037 RF Transistor reference SOT-103 5 GHZ TRANSISTOR
Text: , , Philips Semiconductors Preliminary specification bbSBTBl D03SlhD TST M A R X « — — “ 2 GHz RF power transistor — — BLT10 N Ar,ER PHILIPS/DISCRETE b'iE D DESCRIPTION NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation
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bbS3T31
00351bÃ
OT103
BLT10
OT103.
BLT10
SOT103
transistor SOT103
transistor 1207
"RF Power Transistor"
MSB037
RF Transistor reference
SOT-103
5 GHZ TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: DS7830/DS8830 tß National Semiconductor DS7830/DS8830 Dual Differential Line Driver General Description Features The QS7830/DS8830 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function. TTL Transistor-Transistor-Logic multiple emitter inputs al
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DS7830/DS8830
TL/F/5799-7
TL/F/5799-1
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Untitled
Abstract: No abstract text available
Text: I Ordering number: EN 1207A 2SC3277 i NPN Triple Diffused Planar Silicon Transistor SM YO 400V/10A Switching Regulator Applications Features . High breakdown voltage, high current. . Wige ASO. . Fast switching speed. Absolute Maxima Ratings at Ta=25°C Collector-toBase Voltage
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2SC3277
00V/10A
300us,
DQ2D077
L-200M
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transistor 1207
Abstract: R1207
Text: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built in • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R esistor (Ri<*22kQ, R2=47kfl) • Com plem ent to KS R 1207 ABSOLUTE MAXIMUM RATINGS (TA=25t)
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KSR2207
47kfl)
Collect00/A,
-10mA,
-100/iA
transistor 1207
R1207
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Untitled
Abstract: No abstract text available
Text: T O SH IB A RN1207-RN1209 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN 1207, RN 1208, RN 1209 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design
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RN1207-RN1209
RN2207
RN2209
RN2207
RN2208
RN1207
RN1207-RN
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i22k
Abstract: KSR1207 KSR2207
Text: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R 1=22KQ , R2=47K£i) • C om plem ent to KSR 1207 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR2207
KSR1207
O-92S
-10nA,
i22k
KSR1207
KSR2207
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Untitled
Abstract: No abstract text available
Text: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R 1=22K£1, R2=47K£1) • C om plem ent to KSR 1207 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR2207
-10mA,
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