Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 115 25E Search Results

    TRANSISTOR 115 25E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 115 25E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TMOV SERIES DATA SHEET ZINC OXIDE VARISTOR – TMOV SERIES FEATURE — TMOV Intergrated thermal protection device — High peak surge current rating up to 18KA — Designed to facilitate compliance to UL1449 for TVSS product — Wide operating voltage V1mA range from 82V to 1800V.


    Original
    PDF UL1449 781KM 821KM 911KM 102KM 112KM 122KM 820KM 101KM 121KM

    14n 431K varistor

    Abstract: 431k varistor
    Text: 14M E,N TMOV SERIES DATA SHEET METAL OXIDE VARISTOR – TMOV SERIES FEATURE TMOV integrated thermal protection device High peak surge current rating up to 15KA Designed to facilitate compliance to UL1449 for TVSS products Wide operating voltage (V1mA) range from 82V to 1200V.


    Original
    PDF UL1449 J-STD-020 681KM 751KM 781KM 821KM 911KM 102KM 112KM 122KM 14n 431K varistor 431k varistor

    Untitled

    Abstract: No abstract text available
    Text: TMOV SERIES DATA SHEET METAL OXIDE VARISTOR – TMOV SERIES FEATURE TMOV Intergrated thermal protection device High peak surge current rating up to 15KA Designed to facilitate compliance to UL1449 for TVSS product Wide operating voltage V1mA range from 82V to 1200V.


    Original
    PDF UL1449 681KM 751KM 781KM 821KM 911KM 102KM 112KM 122KM 13-Apr-11

    Untitled

    Abstract: No abstract text available
    Text: TMOV SERIES DATA SHEET ZINC OXIDE VARISTOR – TMOV SERIES FEATURE — TMOV Intergrated thermal protection device — High peak surge current rating up to 18KA — Designed to facilitate compliance to UL1449 for TVSS product — Wide operating voltage V1mA range from 82V to 1800V.


    Original
    PDF UL1449 621KM 681KM 751KM 781KM 821KM 911KM 102KM 112KM 122KM

    Untitled

    Abstract: No abstract text available
    Text: TMOV SERIES DATA SHEET ZINC OXIDE VARISTOR – TMOV SERIES FEATURE — TMOV Intergrated thermal protection device — High peak surge current rating up to 18KA — Designed to facilitate compliance to UL1449 for TVSS product — Wide operating voltage V1mA range from 82V to 1800V.


    Original
    PDF UL1449 621KM 681KM 751KM 781KM 821KM 911KM 102KM 112KM 122KM

    431k varistor

    Abstract: 14n 431K varistor
    Text: 25M E,N TMOV SERIES DATA SHEET METAL OXIDE VARISTOR – TMOV SERIES FEATURE TMOV integrated thermal protection device High peak surge current rating up to 15KA Designed to facilitate compliance to UL1449 for TVSS products Wide operating voltage (V1mA) range from 150V to 1200V.


    Original
    PDF UL1449 J-STD-020 elect505 681KM 751KM 781KM 821KM 911KM 102KM 112KM 431k varistor 14n 431K varistor

    ic 494

    Abstract: ZTX1151A
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1151A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low Saturation voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original
    PDF ZTX1151A ic 494 ZTX1151A

    24EB60

    Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
    Text: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: 20M E,N TMOV SERIES DATA SHEET METAL OXIDE VARISTOR – TMOV SERIES FEATURE TMOV integrated thermal protection device High peak surge current rating up to 15KA Designed to facilitate compliance to UL1449 for TVSS products Wide operating voltage (V1mA) range from 18V to 1200V.


    Original
    PDF UL1449 J-STD-020 751KM 781KM 821KM 911KM 102KM 112KM 122KM 29-Jan-13

    BV-1 501

    Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
    Text: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1


    Original
    PDF LTC1150 LTC1150 5e-12 5e-11 2857E-11 65e-11 7124E-04 3e-11 9605e-8 74902E-10 BV-1 501 BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01

    Acopian Power Supply Model A24H1200

    Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
    Text: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5


    Original
    PDF

    CBIC-U

    Abstract: SCR GTO 100 amp 1000 volt GTO IGBT DRIVER Analog Devices IGBT PNP
    Text: A T & T MELEC I C 25E D • 005002b 0002575 2 ■ AT&T’S CUSTOM DESIGN CAPABILITIES: BCDMOS AND CBIC Q Using our latest technologies, custom designed integrated circuits can be created to meet the criteria of your most complex applications. As opposed to off-the-shelf devices, AT&T custom circuits offer several inherent advantages,


    OCR Scan
    PDF 005002b struct80 CBIC-U SCR GTO 100 amp 1000 volt GTO IGBT DRIVER Analog Devices IGBT PNP

    b0746

    Abstract: B0746C 746C BD7468 B0746A
    Text: BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK_ • AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with the BD745 Series s o t -93 p a c k a g e TOP VIEW • 20 A Continuous Collector Current


    OCR Scan
    PDF BD746, BD746A, BD746B, BD746C BD745 BD746 BD746A BD7468 b0746 B0746C 746C B0746A

    2SC2340

    Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e
    Text: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers


    OCR Scan
    PDF L427414 r-33-0S NE568 NE56800 2SC2340 transistor BJ 102 131 NE56800 2SC2339 NE56803 NE56853 NE56857 NE56887 ne56853e

    Untitled

    Abstract: No abstract text available
    Text: Micmsemi • m m RF Products m Progress Powered by Technology 140 COM M ERCE DRIVE M ONTG OM ERYV ILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor


    OCR Scan
    PDF To-72 MSC1066

    BUK442

    Abstract: BUK442-60A BUK442-60B
    Text: N AMER P H I L I P S / D I S C R E T E 2SE D • btSBTBl 002033S T ■ PowerMOS transistor BUK442-60A BUK442-60B T~ 37-09 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan
    PDF 0DS033S BUK442-60A BUK442-60B BUK442 BUK442-60B

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMI CONDUCTOR FC115 CORP SEE D ? c\c\7Q7h 00Q7 3 0 Ô S T - 3P # -1 3 P N P Epitaxial P la n a r S ilic o n C o m p o s it e T ra n s is to r 2066 i Switching Applications £3083 . I - . with Bias Resistances R1=10ki2, R2=10k£2


    OCR Scan
    PDF FC115 10ki2, FC115 2SA1344, 4139MO H707b 00073fiT T-37-13

    KA-40W

    Abstract: LM391 equivalent LM391N 90 SMT TRANSISTOR 5D IC LM391 LM391N equivalent MJE171 NATIONAL SEMICONDUCTOR DIODE h4b LM391N-100 LM391N
    Text: & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs. High power supply voltage operation and true high fidelity


    OCR Scan
    PDF LM391 0W-81Ì 0W-41Ì TL/H/7146-13 LM391N; b501124 KA-40W LM391 equivalent LM391N 90 SMT TRANSISTOR 5D IC LM391 LM391N equivalent MJE171 NATIONAL SEMICONDUCTOR DIODE h4b LM391N-100 LM391N

    ZTX1151

    Abstract: No abstract text available
    Text: ZTX1151A ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . VALUE SYMBOL CONDITIONS. TYP. MAX. v (BR)CBO -45 -95 V Ic-IOOpA Collector-Emitter Breakdown Voltage V(BR)CES -40 -90 V lc-100|iA Collector-Emitter Breakdown Voltage V(BR)CEO -40


    OCR Scan
    PDF ZTX1151A lc--100 ZTX1151

    LT 3142

    Abstract: Hall Sensor 13A 439 0-S04
    Text: SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-eftect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both


    OCR Scan
    PDF MH-011-2A LT 3142 Hall Sensor 13A 439 0-S04

    CASE353-01

    Abstract: No abstract text available
    Text: It » e | b3t7 S S 4 DOfiDTìS 7 | 6 3 6 7 2 54 MOTOROLA SC CXSTRS/R F . 96D 8 0 9 9 5 T - J? -ÌS MJ10041 MJ10044 MJ10047 MOTOROLA SEMICONDUCTOR TECHNICAL DATA s^ sa^ Jesig n er’s D a ta Sh eet xisn - 25, 50, and 100 AMPERE NPN SILICON POWER DARLINGTON


    OCR Scan
    PDF MJ10041 MJ10044 MJ10047 MJ10041, MJ10044, 96D81008 MJE150291 MJE15028 2N2322 CASE353-01

    MJ10047

    Abstract: mj10041 MJ10044 Transistor C 5198 0DS1 MJ1004 Motorola AN222A
    Text: It 6 3 6 7 2 54 MOTOROLA SC »e | b3l=?SS4 C X S T R S / R F . DOfiDTìS 96D 7 | 80995 T- ?-fs MJ10041 MJ10044 MJ10047 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 25, 50, and 100 A M P E R E - N P N S IL IC O N P O W E R D A R L IN G T O N T R A N S IS T O R 25 kVA EN E R G Y M A N A G EM EN T S E R IE S


    OCR Scan
    PDF b3b7254 Mi10041 J10044 J10047 MJ10041, MJ10044, MJ10047 MJE15028 2N2322 MJE15029' mj10041 MJ10044 Transistor C 5198 0DS1 MJ1004 Motorola AN222A

    transistor cc 8069

    Abstract: cc 8069
    Text: Q a v a n tek UTO/UTC 2024 Series Thin-Fllm Cascadable Amplifier 5 to 2000 MHz FEATURES APPLICATIONS • • • • • IF/RF Amplification Frequency Range: 5 to 2000 MHz High Gain: 16 dB Typ Noise Figure: 4.5 dB (Typ) Temperature Compensated DESCRIPTION


    OCR Scan
    PDF ELECTR164 transistor cc 8069 cc 8069

    LM7824K

    Abstract: LM7824CK LM7806K LM7808 TO3 lm7824ct LM7808K vr lm7805 lm340 7805 LM7808 LM7808CK
    Text: LM7800 Series National Semiconductor LM7800 Series 3-Terminal Positive Voltage Regulators General Description Features The LM7800 series of monolithic 3-terminal positive voltage regulators employ internal current-limiting, thermal shut­ down and safe-area compensation, making them essentially


    OCR Scan
    PDF LM7800 H/10052-8 LM7S00 TL/H/10052-9 2N6133 LM7800 TL/H/10052-10 2N6132 2N6124 LM7824K LM7824CK LM7806K LM7808 TO3 lm7824ct LM7808K vr lm7805 lm340 7805 LM7808 LM7808CK