PBSS9110T
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Preliminary specification 2003 Jul 28 Philips Semiconductors Preliminary specification 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T FEATURES
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M3D088
PBSS8110T
SCA75
613514/01/pp7
PBSS9110T
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PBSS9110T
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS9110T 100 V, 1A PNP low VCEsat BISS transistor Product specification 2004 Feb 18 Philips Semiconductors Product specification 100 V, 1A PNP low VCEsat (BISS) transistor PBSS9110T FEATURES QUICK REFERENCE DATA
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M3D088
PBSS9110T
SCA76
R75/01/pp10
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free transistor equivalent book
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4160T 60 V; 1 A NPN low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 60 V; 1 A NPN low VCEsat (BISS) transistor PBSS4160T FEATURES QUICK REFERENCE DATA
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M3D088
PBSS4160T
SCA75
613514/01/pp12
free transistor equivalent book
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free transistor equivalent book
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5160T 60 V; 1 A PNP low VCEsat BISS transistor Product specification 2003 Jun 23 Philips Semiconductors Product specification 60 V; 1 A PNP low VCEsat (BISS) transistor PBSS5160T FEATURES QUICK REFERENCE DATA
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M3D088
PBSS5160T
SCA75
613514/01/pp12
free transistor equivalent book
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diagram LG LCD TV circuits
Abstract: schematic LG TV lcd backlight inverter schematic LG lcd backlight inverter schematic diagram inverter 12v to 24v 30a lg lcd tv POWER SUPPLY SCHEMATIC lg led tv internal parts block diagram diagram power supply LG 32 in LCD TV circuits KIA78033F regulator KIA78 ic philips lcd tv inverter schematic
Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For LCD TV / Monitor http://www.keccorp.com Sales Engineering G 2006. 04. REV 3.31 First & Best KEC Products Line up for LCD TV & MNT IC’s Discrete Transistor G/P Transistor Power Regulator Management
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OD-523
OD-323
OD323-2-1
SC-76)
OD-123FL
OT-723
OT-23
OT-89
diagram LG LCD TV circuits
schematic LG TV lcd backlight inverter
schematic LG lcd backlight inverter
schematic diagram inverter 12v to 24v 30a
lg lcd tv POWER SUPPLY SCHEMATIC
lg led tv internal parts block diagram
diagram power supply LG 32 in LCD TV circuits
KIA78033F
regulator KIA78 ic
philips lcd tv inverter schematic
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UN1114
Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●
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111D/111E/111F/111H/111L
UN1111
UN1112
UN1113
UN1114
UN1115
UN1116
UN1117
UN1118
UN1119
UN1114
1117 S Transistor
UN1110
UN1111
UN1112
UN1113
UN1115
UN1116
UN1117
UN1118
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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1117 S Transistor
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP6N60E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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PHP6N60E
PHX4N60E
-SOT186A
1117 S Transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP6N60E GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channe! enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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PHP6N60E
PHX4N60E
OT186A
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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gis 110 kv
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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BUK9518-55
T0220AB
gis 110 kv
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transistor tt 2222
Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
Text: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran
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LY93A
BLY93A
transistor tt 2222
BLY93A
TT 2222
ic TT 2222
TT 2222 npn
T-33-73
LY93A
ROTA E Series
IEC134
SOT-56
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D40N1
Abstract: D40N5 D40N D40N4 D40N3 D40N2 D40N1.2 TRANSISTOR regulator k023 D40N12
Text: Silicon Power Tab Transistors High Voltage Video Output Transistor The E>40N is a silicone plastic encapsulated power transistor for TV video and color output stages. Other TV and general applications include: 1 Drive for the TV horizontal sweep tube;. (2) Audio output stage for portable TV
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-si5-x45"
-215x45Â
D40N1
D40N5
D40N
D40N4
D40N3
D40N2
D40N1.2
TRANSISTOR regulator
k023
D40N12
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1117 S Transistor
Abstract: BFR101B BFR101A
Text: 711002b D0bTlb4 435 • PHIN BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed prim arily fo r use as a source follow er w ith the input protected against successive voltage surges by a forward and reverse integrated
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711002b
BFR101A
BFR101B
BFR101A
1117 S Transistor
BFR101B
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Untitled
Abstract: No abstract text available
Text: CSA940, CSC2073 CSA940 CSC2073 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Power Amplifier Applications and Vertical Output Applications DIM A 8 C E F G H J K L M N MIN MAX 14.42 9,63 3,56 16.51 10.67 4.83 0.90 1,15 1.40 3.75 3,88 2.29 2.79 2,54
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CSA940,
CSC2073
CSA940
00OilIB
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MRB11175Y
Abstract: T-31-21 A 3121 IC FO-67
Text: MRB11175Y PHILIPS INTERNATIONAL SbE D 711002b D04t33G 3Mb H P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor intended fo r use in m ilita ry and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications at 1.09 GHz.
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MRB11175Y
711062b
D04b330
FO-67
MRB11175Y
711005b.
004b333
T-31-21
A 3121 IC
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1117 S Transistor
Abstract: sot122f
Text: N AUER PH I L I PS /D IS CR ETE b'îE D • ^53131 002^722 07M H A P X Philips Sem iconductors Product_gpgcitication BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,
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BLY91C/01
OT122F
OT122F_
1117 S Transistor
sot122f
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transistor d 1991 ar
Abstract: No abstract text available
Text: b'lE D N AUER P H ILIP S /D IS C R E TE • b b S B 'm 00 2T 7 22 074 H A P X Product specification Philips Semiconductors BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,
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BLY91C/01
T122F1
OT122F
bb53131
transistor d 1991 ar
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BFR101A
Abstract: BFR101 BFR101B
Text: • b b 5 3 T 3 1 □ □ 2 5 1 CÌ0 fisi B I A P X b?E ]> N AMER P H I L I P S / D I S C R E T E BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source
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bb53T31
251ciÃ
BFR101A
BFR101B
BFR101
BFR101A
BFR101B
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1117 S 3,3 Transistor
Abstract: Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345
Text: CONTENTS PREFACE Related Document System List of Small Signal Transistors & Diodes Surface Mount Devices . 5 1. Using Device Selection Flowchart . 15 General Purpose Low Frequency Transistor SelectionMethod .
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TA75W
1117 S 3,3 Transistor
Hall Sensor 4-lead
S-Mini
1117 S Transistor
transistor 1345
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QM300HA-2H
Abstract: QM300H
Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2HB lc Collector current. 300A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain.750 Insulated Type UL Recognized
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QM300HA-2HB
E80276
E80271
QM300HA-2H
QM300H
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