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    TRANSISTOR 110V Search Results

    TRANSISTOR 110V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 110V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0016114E

    Abstract: BULT106D JESD97
    Text: BULT106D High voltage fast-switching NPN power transistor Features • NPN transistor ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps at 110V A.C. mains


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    PDF BULT106D 0016114E BULT106D JESD97

    JESD97

    Abstract: STL106D
    Text: STL106D High voltage fast-switching NPN power transistor Features • NPN transistor ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps at 110V A.C. mains


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    PDF STL106D JESD97 STL106D

    JESD97

    Abstract: STL106D
    Text: STL106D High voltage fast-switching NPN power transistor Features • NPN transistor ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps at 110V A.C. mains


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    PDF STL106D JESD97 STL106D

    0016114E

    Abstract: BULT106D JESD97
    Text: BULT106D High voltage fast-switching NPN power transistor Features • NPN transistor ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps at 110V A.C. mains


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    PDF BULT106D OT-32 0016114E BULT106D JESD97

    DC 5V to DC 100V CIRCUIT DIAGRAM

    Abstract: 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic nte215
    Text: NTE215 Silicon NPN Transistor Darlington Driver Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.


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    PDF NTE215 NTE215 500IB1 500IB2 DC 5V to DC 100V CIRCUIT DIAGRAM 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic

    Radar

    Abstract: diode gp 429 HV400 hvvi transistor 1150
    Text: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,


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    PDF HVV1012-050 HVV1012-050 HVV1012-050MHz, Pulsed10 HVV1012-060 1025-1150MHz, 10sPACKAGE Radar diode gp 429 HV400 hvvi transistor 1150

    NI-400

    Abstract: diode gp 429 HV400
    Text: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,


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    PDF HVV1012-050 HVV1012-050 HVV1012-050MHz, Pulsed10 HVV1012-060 1025-1150MHz, 10sPACKAGE NI-400 diode gp 429 HV400

    Untitled

    Abstract: No abstract text available
    Text: 2N5237 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5237J • JANTX level (2N5237JX)


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    PDF 2N5237 MIL-PRF-19500 2N5237J) 2N5237JX) 2N5237JV) MIL-STD-750 MIL-PRF-19500/394

    2N5237

    Abstract: 2N5237J 2N5237JV 2N5237JX
    Text: 2N5237 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5237J • JANTX level (2N5237JX)


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    PDF 2N5237 MIL-PRF-19500 2N5237J) 2N5237JX) 2N5237JV) MIL-STD-750 MIL-PRF-19500/394 2N5237 2N5237J 2N5237JV 2N5237JX

    Untitled

    Abstract: No abstract text available
    Text: 2N5237 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5237J • JANTX level (2N5237JX)


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    PDF 2N5237 MIL-PRF-19500 2N5237J) 2N5237JX) 2N5237JV) MIL-STD-750 MIL-PRF-19500/394

    K1 transistor

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.


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    PDF FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor

    transistor Electronic ballast

    Abstract: 15A POWER TRANSISTOR FOR SMPS MJE13003 Electronic ballast 11W MJE13005 mje13005 ballast mje13003 ballast MJE13007 electronic ballast MJE13005 electronic ballast with MJE13007
    Text: “Quality First” First” First & Best KEC Power Transistor MJE Series Device APP MKTMKT-G “Quality First” First” First & Best Power Transistor (MJE Series) ▣ Application High Voltage Switch Mode ▣ Feature High Speed Switching High Voltage Capability


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    PDF O-126 O-220IS O-220AB O-126 O-220IS O-220AB KTC5027/F STBV32 FJN13003 BUJ100 transistor Electronic ballast 15A POWER TRANSISTOR FOR SMPS MJE13003 Electronic ballast 11W MJE13005 mje13005 ballast mje13003 ballast MJE13007 electronic ballast MJE13005 electronic ballast with MJE13007

    Untitled

    Abstract: No abstract text available
    Text: NTE2506 Silicon NPN Transistor High Frequency Video Driver Description: The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the cascode stage of the driver for high–resolution color graphics monitors. Features: D High Breakdown Voltage


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    PDF NTE2506 NTE2506 100mA, 100MHz,

    ZXTP19100CG

    Abstract: ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver
    Text: ZXTP19100CG 100V PNP medium transistor in SOT223 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 3.0W Complementary part number ZXTN19100CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


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    PDF ZXTP19100CG OT223 -100V -130mV ZXTN19100CG OT223 ZXTP19100CGTA D-81541 ZXTP19100CG ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver

    bul6822

    Abstract: BUL6822A soa 01 NPN 0.5A 300V TO-92
    Text: SI SEMICONDUCTORS CO.,LTD. Product specification NPN SILICON POWER TRANSISTOR ●FEATURES: BUL6822AL •HIGH SWITCHING SPEED ■WIDE SOA ● APPLICATIONS: SUITABLE FOR 110V CIRCUIT MODE: ■COMPACT FLUORESCENT LAMP ■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING


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    PDF BUL6822AL bul6822 BUL6822A soa 01 NPN 0.5A 300V TO-92

    mje13003b

    Abstract: mje13003br soa 01
    Text: SI SEMICONDUCTORS CO.,LTD. Product specification NPN SILICON POWER TRANSISTOR ●FEATURES: MJE13003BRL •HIGH SWITCHING SPEED ■WIDE SOA ● APPLICATIONS: SUITABLE FOR 110V CIRCUIT MODE: ■COMPACT FLUORESCENT LAMP ■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING


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    PDF MJE13003BRL O-126 O-126 mje13003b mje13003br soa 01

    bul6822

    Abstract: soa 01 BUL6822L NPN 0.5A 300V TO-92
    Text: SI SEMICONDUCTORS CO.,LTD. Product specification NPN SILICON POWER TRANSISTOR ●FEATURES: BUL6822L •HIGH SWITCHING SPEED ■WIDE SOA ● APPLICATIONS: SUITABLE FOR 110V CIRCUIT MODE: ■COMPACT FLUORESCENT LAMP ■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING


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    PDF BUL6822L bul6822 soa 01 BUL6822L NPN 0.5A 300V TO-92

    BUL6823A

    Abstract: soa 01
    Text: SI SEMICONDUCTORS CO.,LTD. Product specification NPN SILICON POWER TRANSISTOR ●FEATURES: BUL6823AL •HIGH SWITCHING SPEED ■WIDE SOA ● APPLICATIONS: SUITABLE FOR 110V CIRCUIT MODE: ■COMPACT FLUORESCENT LAMP ■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING


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    PDF BUL6823AL BUL6823A soa 01

    MJE13001L

    Abstract: MJE13001 soa 01 compact fluorescent lamp
    Text: SI SEMICONDUCTORS CO.,LTD. Product specification NPN SILICON POWER TRANSISTOR ●FEATURES: MJE13001L •HIGH SWITCHING SPEED ■WIDE SOA ● APPLICATIONS: SUITABLE FOR 110V CIRCUIT MODE: ■COMPACT FLUORESCENT LAMP ■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING


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    PDF MJE13001L CONDITION00 MJE13001L MJE13001 soa 01 compact fluorescent lamp

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MP4305 TOSHIBA POWER TRANSISTOR MODULE SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 MP4305 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm SWITCHING. 31.5 ± 0.2


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    PDF MP4305

    2N3055 equivalent transistor NUMBER

    Abstract: Y2w TRANSISTOR 2n3055 motor control circuits schematic diagram audio power amplifier using 2n3055 2N3055 equivalent 2N3055 diagram with power supply 2N3055 transistor equivalent transistor Y2W ICL8063 circuit diagram equivalent transistor 2n3055
    Text: 01E 10753 3875081 G E SOLID STATE D ICL8063 Power Transistor Driver/Amplifier GENERAL DESCRIPTION FEATURES The ICL8063 is a unique monolithic power transistor driv­ er and amplifier that allows construction of minimum chip power amplifier systems. It includes built in safe operating


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    PDF ICL8063 ICL8063 10kHz ICHB510/8520/8530 2N3055 equivalent transistor NUMBER Y2w TRANSISTOR 2n3055 motor control circuits schematic diagram audio power amplifier using 2n3055 2N3055 equivalent 2N3055 diagram with power supply 2N3055 transistor equivalent transistor Y2W ICL8063 circuit diagram equivalent transistor 2n3055

    MP4305

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA POWER TRANSISTOR MODULE MP4305 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 MP4305 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE A N D INDUCTIVE LOAD SWITCHING. Small Package by Full Molding (SIP 12 Pin)


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    PDF MP4305 MP4305