CM05X5R225M06A
Abstract: RP132K001D RP132H001D RP132H RP132S001D CM105X5R475M06AB CM05X5R225K06A RP132K
Text: RP132x SERIES Low on Resistance / Low Voltage 1A LDO NO.EA-265-110727 OUTLINE The RP132x Series are voltage-regulators with a built-in low ON-resistance transistor and output current is 1A capability. These ICs have two versions: fixed output voltage type and externally adjustable output voltage type.
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RP132x
EA-265-110727
Room403,
Room109,
CM05X5R225M06A
RP132K001D
RP132H001D
RP132H
RP132S001D
CM105X5R475M06AB
CM05X5R225K06A
RP132K
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Untitled
Abstract: No abstract text available
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area CNY70, a compact reflective optical sensor incudes IR-Emitter and Phototransistor with daylight suppression filter. Recommended range of operation is from
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CNY70
CNY70,
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TCRT1000/TCRT1010 Vishay Semiconductors Reflective Optical Sensor with Transistor Output TCRT1000 Description TCRT1010 The TCRT1000 and TCRT1010 are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light.
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TCRT1000/TCRT1010
TCRT1000
TCRT1010
TCRT1000
TCRT1010
2002/95/EC
2002/96/EC
18-Jul-08
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TCRT1000
Abstract: TCRT1010 kodak* Neutral Test Card
Text: TCRT1000/TCRT1010 Vishay Semiconductors Reflective Optical Sensor with Transistor Output TCRT1000 Description TCRT1010 The TCRT1000 and TCRT1010 are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light.
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TCRT1000/TCRT1010
TCRT1000
TCRT1010
TCRT1000
TCRT1010
2002/95/EC
2002/96/EC
08-Apr-05
kodak* Neutral Test Card
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SO16 footprint
Abstract: No abstract text available
Text: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCEO −40 Vdc Collector −Base Voltage VCB −40 Vdc Emitter −Base Voltage VEB
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MMPQ3467
751B-05,
SO-16
SO16 footprint
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TCRT500L
Abstract: TCRT5000 sensor circuit ozone sensor Reflective Optical Sensor TCRT5000
Text: TCRT5000 L Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description TCRT5000 TCRT5000L The TCRT5000 and TCRT500L are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light. The
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TCRT5000
TCRT500L
TCRT5000L
TCRT5000
TCRT5000L
2002/95/ECany
18-Jul-08
TCRT5000 sensor circuit
ozone sensor
Reflective Optical Sensor TCRT5000
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tcrt500l
Abstract: Reflective Optical Sensor TCRT5000 TCRT5000L TCRT5000
Text: TCRT5000 L Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description TCRT5000 TCRT5000L The TCRT5000 and TCRT500L are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light. The
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TCRT5000
TCRT5000
TCRT5000L
TCRT500L
TCRT5000L
08-Apr-05
Reflective Optical Sensor TCRT5000
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IR 21065
Abstract: TCRT1010S
Text: TCRT1010S Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description TCRT1010S TCRT1010S reflective sensor includes an infrared emitter and a phototransistor in a leaded package which blocks visible light. Features • Package type: leaded, short lead cut
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TCRT1010S
TCRT1010S
2002/95/EC
2002/96/EC
D-74025
00072x
08-Feb-08
IR 21065
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CNY70
Abstract: No abstract text available
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •
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CNY70
CNY70
2002/95/EC
2002/96/EC
18-Jul-08
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sensor cny70
Abstract: CNY70 ir sensing circuit using CNY70
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •
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CNY70
CNY70
2002/95/EC
2002/96/EC
08-Apr-05
sensor cny70
ir sensing circuit using CNY70
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Untitled
Abstract: No abstract text available
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •
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CNY70
CNY70
2002/95/EC
2002/96/EC
08-Apr-05
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TCRT1010
Abstract: TCST2202 Reflective Optical Sensor TCRT5000L
Text: TCRT1000, TCRT1010 Vishay Semiconductors Reflective Optical Sensor with Transistor Output FEATURES TCRT1000 TCRT1010 • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 7 x 4 x 2.5 • Peak operating distance: 1 mm
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TCRT1000,
TCRT1010
TCRT1000
2002/95/EC
2002/96/EC
TCRT1010
11-Mar-11
TCST2202
Reflective Optical Sensor TCRT5000L
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RIL3N
Abstract: transistor 1107 transistor tt 2222 W045 TT 2222 BLY91C j0718 RF POWER TRANSISTOR NPN vhf transistor L6
Text: b SE 711002b D DDb3bll Sbl • PHIN BLY91C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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711002b
00b3bll
BLY91C
OT-120.
RIL3N
transistor 1107
transistor tt 2222
W045
TT 2222
BLY91C
j0718
RF POWER TRANSISTOR NPN vhf
transistor L6
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bSE I> • 0021711 TTfl APX BLY91C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLY91C
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP3N50E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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PHP3N50E
PHX2N60E
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP3N50E GENERAL DESCRIPTION PHX2N60E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high
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PHP3N50E
PHX2N60E
OT186A
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PDF
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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ld2sc
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchWIOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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BUK9514-55
T0220AB
ld2sc
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PDF
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BUY89
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE SSE D bt.s3T3i o o m a s t BUY89 J V T*-3 3 -1 3 SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a TO-3 envelope especially intended for use in A C motor control systems from three-phase mains.
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BUY89
bfaS3131
BUY89
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KSR1107
Abstract: KSR2107
Text: KSR2107 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R 1=22KQ , R2=47K£i) • C om plem ent to K S R 1107 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR2107
KSR1107
OT-23
-10nA,
KSR1107
KSR2107
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gs 1117 ax
Abstract: 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117
Text: I f\ A dvanced L in e a r D e v ic e s , In c . J ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY APPLICATIONS GENERAL DESCRIPTION The ALD 1107/ALD 1117 are m onolithic quad/dual P-channel enhance m entm ode matched M O SFET transistor arrays intended fo r a broad range
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ALD1107/ALD1117
1107/ALD
107/A
ALD1106
ALD1106
1107/A
ALD1101
LD1102
LD1103)
gs 1117 ax
1117 S Transistor
Transistor b 1117
c 1117
ald 1106
LD1103
ic 1117
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SPRAGUE 30D
Abstract: No abstract text available
Text: TypeTE VISHAY Vishay Sprague Aluminum Capacitors L ittl -lytic Electrolytics FEATURES • Proven dependable performance in industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of
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505F100C
TE1411
405F100C
106F100D
156F100D
206F100D
256F100D
306F100D
TE1501
30D205F150B
SPRAGUE 30D
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN1107F-RN1109F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1107F, RN1108F, RN1109F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 1.6 ± 0.1 • • • • With Built-in Bias Resistors
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RN1107F-RN1109F
RN1107F,
RN1108F,
RN1109F
RN2107F
RN2109F
RN1107F
RN1108F
RN1109F
1107F-1109F
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