phototransistor ultraviolet
Abstract: 6N140 "immune to high radiation" H1061 Neutron sensitive PIN diode MIL-HDBK-279 4N55 6N134 military optocoupler high sensitive neutron PIN diode
Text: Radiation Immunity of Avago Technologies Optocouplers Application Note 1023 Introduction This application note describes the immunity of Avago Technologies optocoupters to the effects of high radiation environments, such as those encountered in military and space applications. According to
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MIL-HDBK-279,
NS-22,
NS-19,
MIL-M-38510F,
5954-1003E
phototransistor ultraviolet
6N140
"immune to high radiation"
H1061
Neutron sensitive PIN diode
MIL-HDBK-279
4N55
6N134
military optocoupler
high sensitive neutron PIN diode
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transistor D361
Abstract: m02 marking transistor 361A MSOP-8 Marking 361A ke marking transistor transistor CD 1061 1032 msop am-1360 Marking 361A 8-MSOP TDA 5555
Text: Data Sheet D361A Electr oluminescent lectroluminescent Lamp D er IC Drriv iver General Description The Durel D361 Lamp Driver is part of a family of switch-mode IC inverters intended to reduce cost, improve performance and simplify the design of EL backlighting systems. The D361 IC and three components
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D361A
D361A
transistor D361
m02 marking transistor
361A MSOP-8
Marking 361A
ke marking transistor
transistor CD 1061
1032 msop
am-1360
Marking 361A 8-MSOP
TDA 5555
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IGBT Power Module siemens ag
Abstract: BSM100GD120DN2 siemens igbt PCIM 24197 BSM75GD120DN2 siemens igbt chip Semiconductor Group igbt siemens igbt wiring
Text: Investigation of the static and dynamic current distribution in paralleled IGBT modules A. Mauder and W. Scholz Siemens AG, Semiconductor Group, Balanstr. 73, D-81541 Munich, Germany Tel.: +89/636-24197 Mauder , +89/636-28143 (Scholz); Fax: +89/636-22522
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D-81541
IGBT Power Module siemens ag
BSM100GD120DN2
siemens igbt
PCIM
24197
BSM75GD120DN2
siemens igbt chip
Semiconductor Group igbt
siemens igbt wiring
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Untitled
Abstract: No abstract text available
Text: H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000␣MHz The 1012 Series is a wideband, general-purpose thin-film bipolar RF amplifier using resistive
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1000MHz
5963-2452E
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Untitled
Abstract: No abstract text available
Text: Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar RF amplifier using resistive feedback and active bias for
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Q62702-P216
Abstract: SFH 229 GEO06653 Q62702-P215 sfh diode
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 229 SFH 229 FA SFH 229 SFH 229 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1100 nm SFH 229 und bei 880 nm (SFH 229 FA)
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GEO06653
Q62702-P216
SFH 229
GEO06653
Q62702-P215
sfh diode
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GEOY6653
Abstract: Q62702-P215 Q62702-P216
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 229 SFH 229 FA SFH 229 SFH 229 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1100 nm SFH 229 und bei 880 nm (SFH 229 FA)
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GEOY6653
GEOY6653
Q62702-P215
Q62702-P216
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GEX06260
Abstract: Q62702-P1671 Q62702-P930 SFH213FA 870nm
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 213 SFH 213 FA SFH 213 SFH 213 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 213 und bei 880 nm (SFH 213 FA)
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OHR00883
OHF01026
GEX06260
GEX06260
Q62702-P1671
Q62702-P930
SFH213FA
870nm
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GEXY6260
Abstract: Q62702-P1671 Q62702-P930
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 213 SFH 213 FA SFH 213 SFH 213 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 213 und bei 880 nm (SFH 213 FA)
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GEXY6260
GEXY6260
Q62702-P1671
Q62702-P930
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SFH 340
Abstract: GEXY6630 Q62702-P1672 Q62702-P922
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 214 SFH 214 FA SFH 214 SFH 214 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 214 und bei 880 nm (SFH 214 FA)
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GEXY6630
SFH 340
GEXY6630
Q62702-P1672
Q62702-P922
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214 opto
Abstract: GEX06630 Q62702-P1672 Q62702-P922
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 214 SFH 214 FA SFH 214 SFH 214 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 214 und bei 880 nm (SFH 214 FA)
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OHR00883
OHF01026
GEX06630
214 opto
GEX06630
Q62702-P1672
Q62702-P922
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GEOY6653
Abstract: OHLY0598
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Lead Pb Free Product - RoHS Compliant SFH 229 SFH 229 FA SFH 229 SFH 229 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
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Abstract: No abstract text available
Text: TOSHIBA GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 3.2 ±0.2 10 ±0.3 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/*s Max. (Iq = 15A)
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GT15J301
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GT15J311
Abstract: No abstract text available
Text: GT15J311,GT15J311 SM TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311, GT15J311(SM) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT15J311 MOTOR CONTROL APPLICATIONS 1.32 The 3rd Generation Enhancement-Mode High Speed : tf=0.30,«s (Max.) (l£ = 15A)
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GT15J311
GT15J311,
GT15J311
100a/jus
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Untitled
Abstract: No abstract text available
Text: That HEW LETT WHIM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar
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TRANSISTOR sd 346
Abstract: Lautsprecher RFT L 2911 Lautsprecher LP C 4804 transistor TRANSISTOR b 882 p rft lautsprecher transistor GC 228 Transistor B 886 service-mitteilungen RFT KR 650
Text: SERVICE-MITTEILUNGEN VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio - television I Ausgabe 1988 Seite 8 1-4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Sicherheitskontrollen für 4oooer Parbfernsengeräte Nachfolgend geben wir Hinweise, welche speziellen Kontrollen
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untersc0037
TRANSISTOR sd 346
Lautsprecher RFT L 2911
Lautsprecher LP
C 4804 transistor
TRANSISTOR b 882 p
rft lautsprecher
transistor GC 228
Transistor B 886
service-mitteilungen
RFT KR 650
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HP optocoupler
Abstract: photodiode and phototransistor transistor 1012 Transistor 1967 MIL-HDBK-279 6N140 hp optocouplers military optocoupler H1061 4N55
Text: ÉÉSSfflieÉ . . . % - • • - HEWLETT ■-■-ÿ-ii* , ; . " 1 • ' ÉPPLICATION NOTE 1023 PACKARD ■Iii|iinn»naii8— ■ ■ ig j; - ; This application note describes the im m unity of HewlettPackard optocouplers to the effects of high radiation
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MIL-HDBK-279,
NS-22,
NS-19,
MIL-M-3851
HP optocoupler
photodiode and phototransistor
transistor 1012
Transistor 1967
MIL-HDBK-279
6N140
hp optocouplers
military optocoupler
H1061
4N55
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UTC1012
Abstract: ML 1557 b transistor om 8370 hm 8370 avantek utc
Text: W h a ì HEW LETT mL’HM PA CK ARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar
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PMBTA55
Abstract: PMBTA06
Text: Philips Semiconductors Product specification PNP general purpose transistors PMBTA55; PMBTA56 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 80 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • General purpose switching and amplification, e.g.
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PMBTA55;
PMBTA56
PMBTA06.
PMBTA55
MAM256
PMBTA56
PMBTA06
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transistor TIP3055
Abstract: No abstract text available
Text: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.
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TIP3055
OT-93
TIP2955.
003302b
bbS3T31
00350Efl
transistor TIP3055
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N4OE QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
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PHP10N4OE
T0220AB
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acrian RF POWER TRANSISTOR
Abstract: JTDA50 JTDA50-2 Scans-00115670
Text: 0182998 ACRIAN INC GENERAL T? DE j G i a a n f l □□□1012 2 T D ' T - J j - LS JTDA50 DESCRIPTION The JTDA50 is a common basis transistor providing 50 watts of pulsed RF output power across the 960-1215 MHz Band. This hermetically sealed transistor is specifically designed for
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JTDA50
UTDA50
JTDA50-2
acrian RF POWER TRANSISTOR
JTDA50-2
Scans-00115670
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L7E transistor
Abstract: No abstract text available
Text: •I bbS3^31 33T H A P X N AUER PHILIPS/DISCRETE PMBT5401 L7E ]> y v SILICON P-N-P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope. QUICK REFERENCE DATA
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PMBT5401
OT-23
OT-23es
L7E transistor
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diode sy 400
Abstract: sy 320 diode
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N40E QUICK REFERENCE DATA SYM BO L N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable
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PHP10N40E
T0220AB
diode sy 400
sy 320 diode
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