Untitled
Abstract: No abstract text available
Text: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA
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IRGP4069DPbF
IRGP4069D-EPbF
O-247AD
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IRGP4069D
Abstract: irgp4069dpbf
Text: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA
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IRGP4069DPbF
IRGP4069D-EPbF
O-247AD
IRGP4069D
irgp4069dpbf
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RR350
Abstract: S100-200
Text: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA
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IRGP4069DPbF
IRGP4069D-EPbF
O-247AD
RR350
S100-200
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IRGP4650D
Abstract: IRGP4650DPBF irgp4650dp
Text: IRGP4650DPbF IRGP4650D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 50A, TC = 100°C tSC 5 s, TJ max = 175°C G VCE(on) typ. = 1.60V @ IC = 35A E n-channel Applications • Industrial Motor Drive
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IRGP4650DPbF
IRGP4650D-EPbF
O-247AC
IRGP4650DPbF
O-247AD
IRGP4650D-EP
IRGP4650DPbF/IRGP4650D-EPbF
IRGP4650D
irgp4650dp
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Untitled
Abstract: No abstract text available
Text: IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100°C tSC 5.5µs, TJ max = 175°C E G VCE(ON) typ. = 1.7V @ IC = 35A C G IRGP4750DPbF TO-247AC E n-channel Applications
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IRGP4750DPbF
IRGP4750D-EPbF
IRGP4750DPbFÂ
247ACÂ
IRGP4750Dâ
247ADÂ
IRGP4750DPbF/IRGP4750D-EPbF
JESD47F)
O-247AC
O-247AD
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Untitled
Abstract: No abstract text available
Text: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter
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IRG4PSH71UD
40kHz
200kHz
Super-247
O-247
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IRGP4069-EPbF
Abstract: IRGP4069PbF transistor* igbt 70A 300 V
Text: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM
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IRGP4069PbF
IRGP4069-EPbF
O-247AD
IRGP4069-EPbF
IRGP4069PbF
transistor* igbt 70A 300 V
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IRG4PSH71UD
Abstract: IRG4P IRF 547 MOSFET IRFPS37N50A MOSFET 1000V 140A TO274
Text: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter
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IRG4PSH71UD
40kHz
200kHz
Super-247
O-247
IRG4PSH71UD
IRG4P
IRF 547 MOSFET
IRFPS37N50A
MOSFET 1000V 140A
TO274
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IRGP4069-EPbF
Abstract: No abstract text available
Text: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM
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IRGP4069PbF
IRGP4069-EPbF
O-247AD
IRGP4069-EPbF
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DSAQ
Abstract: No abstract text available
Text: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM
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IRGP4069PbF
IRGP4069-EPbF
O-247AD
DSAQ
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Untitled
Abstract: No abstract text available
Text: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching
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IRG4PSH71UDPbF
40kHz
200kHz
Super-247
O-247
IRFPS37N50A
IRFPS37N50A
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transistor* igbt 70A 300 V
Abstract: 70A 1200V IGBTS Rectifier, 70A, 1000V Super-247 Package irg4psh71udp IRFPS37N50A diode 70A
Text: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching
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IRG4PSH71UDPbF
40kHz
200kHz
Super-247
O-247
IRFPS37N50A
IRFPS37N50A
transistor* igbt 70A 300 V
70A 1200V IGBTS
Rectifier, 70A, 1000V
Super-247 Package
irg4psh71udp
diode 70A
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Untitled
Abstract: No abstract text available
Text: GB35XF120K Vishay High Power Products IGBT Sixpack Module, 35 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse
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GB35XF120K
12-Mar-07
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95089
Abstract: GB35XF120K
Text: GB35XF120K Vishay High Power Products IGBT Sixpack Module, 35 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse
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GB35XF120K
18-Jul-08
95089
GB35XF120K
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Untitled
Abstract: No abstract text available
Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G VCE(ON) typ. = 1.9V @ IC = 35A G E n-channel Applications • Industrial Motor Drive
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IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
IRG7PH50K10DPbFÂ
IRG7PH50K10Dâ
O-247AC
O-247AD
JESD47F)
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irg7ph50
Abstract: IRG7PH50K10DPBF IRG7PH50K10D 50A 1200V IRG7PH50K10D-EPBF
Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G E VCE(ON) typ. = 1.9V @ IC = 35A C G IRG7PH50K10DPbF E n-channel Applications
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IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
IRG7PH50K10DPbF
RG7PH50K10DEPbF
IRG7PH50K10D-EPBF
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
O-247AC
O-247AD
JESD47F)
irg7ph50
IRG7PH50K10D
50A 1200V
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IGBT modul
Abstract: ir igbt 1200V 10A 600V 100A thyristor IGBT Thyristor thyristor THYRISTOR 1200 tdb6hk124 TD B6HK 124 N 16 RR thyristor TD 25 N Al2O3
Text: Technische Information / Technical Information Thyristor-Modul mit Chopper-IGBT Thyristor Module with Chopper-IGBT TD B6HK 124 N 16 RR N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Gleichrichterdiode, -thyristor / Rectifierdiode, -thyristor
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IRGPC50MD2
Abstract: No abstract text available
Text: PD - 9.1145 IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes
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IRGPC50MD2
10kHz)
O-247AC.
O-247AD)
O-247AC
IRGPC50MD2
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IGBT 500V 35A
Abstract: IGBT 600V 35A 600V 25A Ultrafast Diode IRGPC50MD2
Text: PD - 9.1145 IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes
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IRGPC50MD2
10kHz)
O-247AC.
O-247AD)
O-247AC
IGBT 500V 35A
IGBT 600V 35A
600V 25A Ultrafast Diode
IRGPC50MD2
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information Thyristor-Modul mit Chopper-IGBT Thyristor Module with Chopper-IGBT TD B6HK 124 N 16 RR N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Gleichrichterdiode, -thyristor / Rectifierdiode, -thyristor
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G40N60
Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b
Text: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG40N60B3
HGTG40N60B3
150oC.
100ns
150oC
G40N60
g40n60b3
HGTG40N60B3 equivalent
TA49052
LD26
RHRP3060
g40n60b
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G40N60
Abstract: g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b
Text: HGTG40N60B3 Semiconductor 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
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HGTG40N60B3
HGTG40N60B3
150oC.
100ns
150oC
G40N60
g40n60b3 igbt
G40N60B3
HGTG40N60B3 equivalent
LD26
RHRP3060
TA49052
g40n60b
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information Thyristor-Modul mit Chopper-IGBT Thyristor Module with Chopper-IGBT N TD B6HK 124 N 16 RR B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Gleichrichterdiode, -thyristor / Rectifierdiode, -thyristor
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Untitled
Abstract: No abstract text available
Text: International PD9800 Rectifier_IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT Vces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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OCR Scan
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PDF
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IRGPC50FD2
10kHz)
C-131
SS45E
D01TJE1
O-247AC
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