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    TRANSISTOR* IGBT 70A 300 V Search Results

    TRANSISTOR* IGBT 70A 300 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR* IGBT 70A 300 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRGP4069D

    Abstract: irgp4069dpbf
    Text: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA


    Original     		PDF IRGP4069DPbF IRGP4069D-EPbF O-247AD IRGP4069D irgp4069dpbf

    RR350

    Abstract: S100-200
    Text: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA


    Original     		PDF IRGP4069DPbF IRGP4069D-EPbF O-247AD RR350 S100-200

    IRGP4650D

    Abstract: IRGP4650DPBF irgp4650dp
    Text: IRGP4650DPbF IRGP4650D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 50A, TC = 100°C tSC 5 s, TJ max = 175°C G VCE(on) typ. = 1.60V @ IC = 35A E n-channel Applications • Industrial Motor Drive


    Original     		PDF IRGP4650DPbF IRGP4650D-EPbF O-247AC IRGP4650DPbF O-247AD IRGP4650D-EP IRGP4650DPbF/IRGP4650D-EPbF IRGP4650D irgp4650dp

    IRGP4069-EPbF

    Abstract: IRGP4069PbF transistor* igbt 70A 300 V
    Text: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM


    Original     		PDF IRGP4069PbF IRGP4069-EPbF O-247AD IRGP4069-EPbF IRGP4069PbF transistor* igbt 70A 300 V

    IRGP4069-EPbF

    Abstract: No abstract text available
    Text: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM


    Original     		PDF IRGP4069PbF IRGP4069-EPbF O-247AD IRGP4069-EPbF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95892 IRG4PSH71UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PSH71UPbF 40kHz 200kHz Super-247 O-247 pow74AA) IRFPS37N50A IRFPS37N50A

    T0160NB45A

    Abstract: No abstract text available
    Text: Date:- 15 Feb, 2013 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800


    Original     		PDF T0160NB45A T0160NB45A

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G VCE(ON) typ. = 1.9V @ IC = 35A G E n-channel Applications • Industrial Motor Drive


    Original     		PDF IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbFÂ IRG7PH50K10Dâ O-247AC O-247AD JESD47F)

    irg7ph50

    Abstract: IRG7PH50K10DPBF IRG7PH50K10D 50A 1200V IRG7PH50K10D-EPBF
    Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G E VCE(ON) typ. = 1.9V @ IC = 35A C G IRG7PH50K10DPbF E n-channel Applications


    Original     		PDF IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbF RG7PH50K10DEPbF IRG7PH50K10D-EPBF IRG7PH50K10DPbF/IRG7PH50K10D-EPbF O-247AC O-247AD JESD47F) irg7ph50 IRG7PH50K10D 50A 1200V

    95089

    Abstract: GB35XF120K
    Text: GB35XF120K Vishay High Power Products IGBT Sixpack Module, 35 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse


    Original     		PDF GB35XF120K 18-Jul-08 95089 GB35XF120K

    IRGPC50MD2

    Abstract: No abstract text available
    Text: PD - 9.1145 IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes


    Original     		PDF IRGPC50MD2 10kHz) O-247AC. O-247AD) O-247AC IRGPC50MD2

    IGBT 500V 35A

    Abstract: IGBT 600V 35A 600V 25A Ultrafast Diode IRGPC50MD2
    Text: PD - 9.1145 IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes


    Original     		PDF IRGPC50MD2 10kHz) O-247AC. O-247AD) O-247AC IGBT 500V 35A IGBT 600V 35A 600V 25A Ultrafast Diode IRGPC50MD2

    G40N60

    Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b
    Text: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 LD26 RHRP3060 g40n60b

    G40N60

    Abstract: g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b
    Text: HGTG40N60B3 Semiconductor 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b

    G40N60B3

    Abstract: No abstract text available
    Text: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60B3

    G40N60

    Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678
    Text: HGTG40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 HGTG40N60B3 equivalent g40n60b g40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678

    39AE

    Abstract: transistor WW 179 035H IRFPE30 td 4100 application
    Text: PD - 95398 IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4PC50FPbF O-247AC O-247AC IRFPE30 39AE transistor WW 179 035H IRFPE30 td 4100 application

    IRG4P254S

    Abstract: No abstract text available
    Text: PD -91591A IRG4P254S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF -91591A IRG4P254S 10kHz O-247AC O-247AC IRG4P254S

    200V dc 5ohm mosfet

    Abstract: IRG4P254S
    Text: PD -91591A IRG4P254S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF -91591A IRG4P254S 10kHz O-247AC O-247AC Absol883 200V dc 5ohm mosfet IRG4P254S

    1mbh

    Abstract: YR39 D2050
    Text: 1MBH70D-090A IGBT : Outline Drawings INSULATED GATE BIPOLAR TRANSISTOR SiQ3 : Features • ¡S B U M V y-i''?' • High Speed Sw itching Low Saturation Voltage • A X'h'f— hS i/t M O S -y—MHia #/jv§)y'C.y^— Small Package High Impedance Gate Gate


    OCR Scan     		PDF 1MBH70D-090A 50/iS) BH70D-090A 1mbh YR39 D2050

    Untitled

    Abstract: No abstract text available
    Text: International PD9800 Rectifier_IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT Vces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF IRGPC50FD2 10kHz) C-131 SS45E D01TJE1 O-247AC

    G40N60

    Abstract: g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052
    Text: CB H G T G 40N 60B 3 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, T c = 2 5 °C The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    OCR Scan     		PDF HGTG40N60B3 G40N60B3 1-800-4-HARRIS G40N60 g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052

    SK4100

    Abstract: No abstract text available
    Text: V i» * * :» J ;j i\l t ! Y , HAL= , , '_^-o l.J B R ID G E >OWEh< u i U O t H Y B R ID 4100 8170 Thompson Road Cícera N.Y. 13039 > MIL-STD-1772 CERTIFIED FEATURES: • • • • • • • 315) 689-9201 600V, 30 Amp Capability Ultra Low Thermal Resistance - Junction to Casa - 0.5°C/W


    OCR Scan     		PDF MIL-STD-1772 MSK4100 MSK4100B SK4100

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.695A International IM lRectifier IRGPC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency


    OCR Scan     		PDF IRGPC50F 10kHz) O-247AC