BU206
Abstract: BU205 BU205 equivalent BU204 LC2D
Text: NOT OROL A SC 6 3 6 7 2 54 ÍXSTRS/R MOTOROLA SC D Ëf|b3b7S54 F3- XSTRS/R F 96D 80660 □□flObbO D T - 3 3 - II MOTOROLA BU204 BU205 SEM ICONDUCTOR TECHNICAL DATA ivfil )t ‘s i " i l c»i •‘-¡ I ) ;K a 2S AMPERE NPN SILICON POWER TRANSISTO RS H O R IZO N TA L D EFLECTIO N TRANSISTO R
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b3b7S54
BU204
BU205
BU204
B367254
BU204,
r-33-//
14-MAXIMUM
BU206
BU205
BU205 equivalent
LC2D
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SM 4108
Abstract: TOPFETs FETs 484 am marking codes medium power transistors RS 432
Text: Concise Catalogue 1996 Philips Semiconductors Discrete semiconductors CONTENTS page SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER Sm all-signal bipo lar transisto rs .4-5
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YTF523
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTO R SILICON N CHANNEL MOS T Y P E TT-MOSli YTF523 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 10.3 MAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 03.6 ±0.2 DRIVE APPLICATIONS. . Low Drain-Source ONResistance
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YTF523
20kil)
00A/MS
YTF523
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2SK1583
Abstract: IEI-1213 MEI-1202
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET M OS FIELD EFFECT TRANSISTO R 2SK1583 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm
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2SK1583
2SK1583
IEI-1213
MEI-1202
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28S DIODE
Abstract: 2SK672 hc 175
Text: 2SK672 FIELD EFFECT TRANSISTO R SILICON N CHANNEL MOS T Y P E TT-MOSli INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. . 03.6 ±0.2 DRIVE APPLICATIONS. 13 2 . Low Drain-Source ON Resistance
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2SK672
0-15iXTyp.
300uA
Te10mA,
28S DIODE
2SK672
hc 175
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Untitled
Abstract: No abstract text available
Text: TECHNOLOGY OVERVIEW N-CHANNEL ENHANCEM ENT MODE POWER MOS TRANSISTO RS SG S-THOMSON series of POWER MOS transis tors öfters an extremely broad variety of devices covering the voltage range from 50 V to 1000 V with low on-resistance RDSion in different package and
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C3472Ü
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Untitled
Abstract: No abstract text available
Text: International pd-9 a igR]Rectifier_ IRGMC30F INSULATED GATE BIPOLAR TRANSISTO R Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC30F
IRGMC30FD
IRGMC30FU
O-254
IL-S-19500
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2SK1333
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTO R 2SK1333 SILICON N CHANNEL MOS TYPE w-MOSii HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVER, OC-DC CONVERTER ANS SWITCHING REGURATOR APPLICATIONS. • Low Drain-Source ON Resistance : RDS(ON)=0,i,n (Max.) ID=15A • With Built-in Free Wheeling Diode:
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2SK1333
2SK1333
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LI 20 AB
Abstract: TSD2904 SGS 7301 M113
Text: r=7 SGS-THOMSON TSD2904 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to
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TSD2904
TSD2904
LI 20 AB
SGS 7301
M113
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Feme Relays
Abstract: Feme Relays 001
Text: DATA SHEET NEC / M O S FIELD EFFECT TRANSISTO R 2SK1593 N-CHANNEL MOS FET FOR SW ICHING The 2SK1593, N-channel vertical type MOS FET, is a switching PACKAGE DIMENSIONS Unit : mm device which can be driven directly by the output o f ICs having a 5 V power source.
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2SK1593
2SK1593,
IEI-1207)
VP15-00
WS60-00
Feme Relays
Feme Relays 001
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BUK7514-60
Abstract: T0220AB
Text: Objective specification Philips Sem iconductors TrenchM O S transisto r Standard level FET G ENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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BUK7514-60
T0220AB
T0220AB)
T0220)
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON TSD2903 m RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to
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TSD2903
TSD2903
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2963 TO SH IBA FIELD EFFECT TRANSISTO R SILICON N CH ANN EL MOS TYPE L2- tt-MOS V 2SK2963 HIGH SPEED APPLICATION S INDUSTRIAL APPLICATIONS DC-DC CONVERTER, R E LA Y DRIVE AN D M OTOR DRIVE APPLICATIO N S 4V Gate Drive Low Drain-Source ON Resistance
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2SK2963
1UI11SW
--25V,
221mH
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2SC2703
Abstract: No abstract text available
Text: TOSHIBA 2SC2703 TO SH IBA TRANSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2703 AU D IO POW ER AM PLIFIER APPLICATIONS. High DC Current Gain : h p g = 100~320 MAXIMUM RATINGS (Ta= 2 5 °C ) CHARACTERISTIC SYM BOL RATING UNIT Collector-Base Voltage VCBO
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2SC2703
75MAX
O-92MOD
2SC2703
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Untitled
Abstract: No abstract text available
Text: rz 7 SGS-THOMSON ^>7# s T S D 2921 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCTDEVELOPMENTDATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to
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TSD2921
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NEC 2SK1273
Abstract: No abstract text available
Text: DATA SHEET NEC / / 2SK1273 M O S FIELD EFFECT TRANSISTO R N-CHANNEL MOS FET FOR HIGH SPEED SW ITCHING PACKAGE DIMENSIONS Unit : mm The 2SK1273, N-channel vertical type MOS FET, is a switching device which can be driven directly by the o utp ut o f ICs having a 5 V
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2SK1273,
NEC 2SK1273
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saa 7321
Abstract: No abstract text available
Text: International Rectifier Preliminary Data Sheet No. PD-9.1331 IR H M 7 1 6 0 IRHM 8I 6O REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTO R 10OVolt, 0.045Q, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail
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10OVolt,
saa 7321
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MBH60D-090A
Abstract: 1MBH60D 1MBH60D-090A 30S3 H150 aft7
Text: 1MBH60D-090A g ilG B T IGBT : Outline Drawings INSULATED GATE BIPOLAR TRANSISTO R ^ Features • i H i g h Speed Switching • fëtâifllïJiE Low Saturation Voltage • hÎ SÎ ÆÎ MOSV— Hi gh Impedance Gate »/j\ggy{.y^ - _ S m a l l Package : Applications
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1MBH60D-090A
50//s)
I95t/R89)
MBH60D-090A
1MBH60D
1MBH60D-090A
30S3
H150
aft7
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TC-2461
Abstract: No abstract text available
Text: I'i4 ì Ci S H E E ! MOS FIELD EFFECT POWER TRANSISTORS 2SJ326,2SJ326-2 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION Th e 2 S J3 2 6 is P-channel M O S Field Effect Transisto r de PACKAGE DIMENSIONS in millimeters signed for solenoid, m otor and lam p driver.
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2SJ326
2SJ326-2
IEI-1209)
2SJ326,
2SJ326-Z
TC-2461
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Untitled
Abstract: No abstract text available
Text: DATA SHEET IMEC / M O S FIELD EFFECT TRANSISTO R 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461 is a sw itching device which can be driven directly by a PACKAGE DRAW INGS in millimeter 2.5 V pow er source. The M O S FET has excellent switching characteristics and is suitable
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2SJ461
2SJ461
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Untitled
Abstract: No abstract text available
Text: r= 7 SGS-THOMSON ^ 7 TSD2902 [j}fflO Mi[LI gTrœROD©i RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to
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TSD2902
TSD2902
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STP5N50D
Abstract: No abstract text available
Text: SGS-THOMSON STP5N50D N - CHANNEL ENHANCEMENT MODE FREDFET PRELIMINARY DATA TYPE V dss r R ds om I S T P 5 N 5 0 D _5 0 0 V . . . . . 1 .5 i i Id ^ 5 A POWER MOS TRANSISTO R W ITH FAST REC OVERY BULK DIODE: CO M PLETE DIODE SPECIFICATIO N PARTIC ULARLY SUITABLE FOR BRIDGE
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STP5N50D
SC06020
STP5N50D
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON SD2903 MMMIlLIlMMSiDÊS RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS P R E L IM IN A R Y D A T A 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB DESCRIPTION The SD2903 is a gold metallized N-channel MOS field effect RF power transistor. The SD2903 is
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SD2903
SD2903
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2SK1583
Abstract: IEI-1213 MEI-1202
Text: DATA SHEET M OS FIELD EFFECT TRANSISTO R 2SK1583 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm The 2S K 15 83 is an N-channel vertical type MOS F E T which can be driven by 2 .5 V power supply. As the MOS F E T is driven by low voltage and does not require con
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2SK1583
2SK1583
IEI-1213
MEI-1202
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