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    TRANSCONDUCTANCE MOSFET Search Results

    TRANSCONDUCTANCE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TRANSCONDUCTANCE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor RCA 467

    Abstract: ota ca 3080 RCA 3080 rca CA3080 RCA 467 rca cmos book rca cmos handbook IEEE J. Solid State Circuits, SC "rca application note" rca 1967
    Text: R. L. Geiger and E. Sánchez-Sinencio, "Active Filter Design Using Operational Transconductance Amplifiers: A Tutorial," IEEE Circuits and Devices Magazine, Vol. 1, pp.20-32, March 1985. Active Filter Design Using Operational Transconductance Amplifiers: A Tutorial


    Original     		PDF

    2SK2098-01MR

    Abstract: 2sk2098
    Text: 2SK2098-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F15 Applications Motor controllers


    Original     		PDF 2SK2098-01MR O-220F15 SC-67 2SK2098-01MR 2sk2098

    2SK1946-01MR

    Abstract: 2SK1946 ON60
    Text: 2SK1946-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F15 Applications Motor controllers


    Original     		PDF 2SK1946-01MR O-220F15 SC-67 2SK1946-01MR 2SK1946 ON60

    Untitled

    Abstract: No abstract text available
    Text: ICE47N60W Product Summary N-Channel Enhancement Mode MOSFET Features: TO247 Package Low rDS on Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance


    Original     		PDF ICE47N60W 250uA 187nC O-247 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    2SJ477

    Abstract: 2SJ477-01MR
    Text: 2SJ477-01MR FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F Applications Switching regulators


    Original     		PDF 2SJ477-01MR O-220F 2SJ477 2SJ477-01MR

    2SK1946-01MR

    Abstract: No abstract text available
    Text: 2SK1946-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F15 Applications Motor controllers


    Original     		PDF 2SK1946-01MR O-220F15 SC-67 K1946-01MR 2SK1946-01MR

    2SK2049

    Abstract: No abstract text available
    Text: 2SK2049 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance TO-220AB Applications Motor controllers General purpose power amplifier


    Original     		PDF 2SK2049 O-220AB SC-46 2SK2049

    20V P-Channel Power MOSFET

    Abstract: 2SJ475-01 2sj475
    Text: 2SJ475-01 FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators


    Original     		PDF 2SJ475-01 O-220AB 00A/s 20V P-Channel Power MOSFET 2SJ475-01 2sj475

    2SK2049

    Abstract: No abstract text available
    Text: 2SK2049 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance TO-220AB Applications Motor controllers General purpose power amplifier


    Original     		PDF 2SK2049 O-220AB SC-46 2SK2049

    2SK2098

    Abstract: 2SK2098-01MR
    Text: 2SK2098-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F15 Applications Motor controllers


    Original     		PDF 2SK2098-01MR O-220F15 SC-67 2SK2098 2SK2098-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK1088-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier


    Original     		PDF 2SK1088-MR O-220F15 SC-67

    TCH-80

    Abstract: No abstract text available
    Text: 2SK1387-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier


    Original     		PDF 2SK1387-MR O-220F15 SC-67 TCH-80

    2SK1087-MR

    Abstract: No abstract text available
    Text: 2SK1087-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier


    Original     		PDF 2SK1087-MR O-220F15 SC-67 2SK1087-MR

    M5010

    Abstract: No abstract text available
    Text: 2SK1822-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-220F15


    Original     		PDF 2SK1822-01MR O-220F15 SC-67 M5010

    2SK1085-MR

    Abstract: 2SK1085MR 2SK1085
    Text: 2SK1085-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier


    Original     		PDF 2SK1085-MR O-220F15 SC-67 2SK1085-MR 2SK1085MR 2SK1085

    2sj475

    Abstract: No abstract text available
    Text: 2SJ475-01 FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators


    Original     		PDF 2SJ475-01 O-220AB 2sj475

    2SK1506

    Abstract: SC-65
    Text: 2SK1506 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance Low driving power High forward transconductance TO-3P Applications Motor controllers General purpose power amplifier DC-DC converters


    Original     		PDF 2SK1506 SC-65 2SK1506 SC-65

    2SK1506

    Abstract: 2SK1506 equivalent 2sk150 SC-65
    Text: 2SK1506 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance Low driving power High forward transconductance TO-3P Applications Motor controllers General purpose power amplifier DC-DC converters


    Original     		PDF 2SK1506 SC-65 2SK1506 2SK1506 equivalent 2sk150 SC-65

    Untitled

    Abstract: No abstract text available
    Text: 2SK1098-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier


    Original     		PDF 2SK1098-MR O-220F15 SC-67

    Untitled

    Abstract: No abstract text available
    Text: 2SK1083-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier


    Original     		PDF 2SK1083-MR O-220F15 SC-67

    40841 dual gate mosfet

    Abstract: AN6668 AN6818 CA3060E 40841
    Text: CA3060 fu HARRIS S E M I C O N D U C T O R Operational Transconductance Amplifier Arrays March 1993 Features Description • Low Power Consumption as Low as 100mW Per Amplifier The CA3060 monolithic integrated circuit consists of an array of three independent Operational Transconductance Amplifiers.* This type of


    OCR Scan     		PDF CA3060 CA3060 100kil 40841 dual gate mosfet AN6668 AN6818 CA3060E 40841

    2N6761

    Abstract: UNITRODE TRANSISTORS SA-A
    Text: POWER MOSFET TRANSISTORS AJTX JTXV 500 Volt, 1.5 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching


    OCR Scan     		PDF MIL-S-19500/542A 2N6761 UNITRODE TRANSISTORS SA-A

    2N6799

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel 2N6799 JTX, JTXV 2N6800 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosnm and a high transconductance. FEATURES


    OCR Scan     		PDF 2N6799 2N6800 2N6799

    UFN350

    Abstract: UFN351
    Text: UFN350 UFN351 UFN352 UFN353 POWER MOSFET TRANSISTORS 400 Volt, 0.3 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low RDscom and a high transconductance. FEATURES


    OCR Scan     		PDF UFN350 UFN351 UFN352 UFN353 UFN350 UFN351 UFN352