1SMZG06GP TR
Abstract: No abstract text available
Text: 1SMZG06GP.1SMZG10GP 0.8 Amp. Miniature Single Phase Glass Passivated Surface Mount Bridge Rectifier TO-269AA / MBS Current 0.8 A Voltage 600 V to 1000 V FEATURES Saves space on printed circuit boards Ideal for automated placement High surge current capability
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1SMZG06GP.
1SMZG10GP
O-269AA
2011/65/EU
2002/96/EC
J-STD-020,
O-269AA/MBS.
MIL-STD-750
J-STD-002
JESD22-B102s
1SMZG06GP TR
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Untitled
Abstract: No abstract text available
Text: 1SMZG06GP.1SMZG10GP 0.8 Amp. Miniature Single Phase Glass Passivated Surface Mount Bridge Rectifier TO-269AA / MBS Current 0.8 A Voltage 600 V to 1000 V FEATURES Saves space on printed circuit boards Ideal for automated placement High surge current capability
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1SMZG06GP.
1SMZG10GP
O-269AA
2002/95/EC
2002/96/EC
J-STD-020,
O-269AA/MBS.
MIL-STD-750
J-STD-002
JESD22-B102s
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marking code z6 bridge
Abstract: No abstract text available
Text: 1SMZG06GP.1SMZG10GP 0.8 Amp. Miniature Single Phase Glass Passivated Surface Mount Bridge Rectifier TO-269AA / MBS Current 0.8 A Voltage 600 V to 1000 V FEATURES Saves space on printed circuit boards Ideal for automated placement High surge current capability
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Original
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PDF
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1SMZG06GP.
1SMZG10GP
O-269AA
2002/95/EC
2002/96/EC
J-STD-020,
O-269AA/MBS.
MIL-STD-750
J-STD-002
JESD22-B102s
marking code z6 bridge
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marking code z6 bridge
Abstract: No abstract text available
Text: 1SMZG06GP.1SMZG10GP 0.8 Amp. Miniature Single Phase Glass Passivated Surface Mount Bridge Rectifier TO-269AA / MBS Current 0.8 A Voltage 600 V to 1000 V FEATURES Saves space on printed circuit boards Ideal for automated placement High surge current capability
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Original
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PDF
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1SMZG06GP.
1SMZG10GP
O-269AA
2002/95/EC
2002/96/EC
J-STD-020,
O-269AA/MBS.
MIL-STD-750
J-STD-002
JESD22-B102.
marking code z6 bridge
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CDQ2N52
Abstract: 2 MHZ ULTRASONIC transducers CDK1N52
Text: Technical Specification FLUXUS F70x Liquid Ultrasonic Flowmeter for Permanent Installation Designed for wall mounting or installation in 19'' rack systems Features • Precise bi-directional and highly dynamic flow measurement with the non-intrusive clamp-on technology
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Untitled
Abstract: No abstract text available
Text: •K ? u a i f f l u ' J i j g i S \ j ! a ^ i i u i a v a ^ K a / a «g»-iTCH*g« 4 \ P \ B, 15 .M 5 6 7 B 9 10 II IZ 13 14 15 16 17 IS 19 Z0 21 ZZ Z3 l O t y a j O i i CH j Q i Z4 Z5 Z6 Z7 Z8 Z9 30 31 3Z 33 34 Ka 35 36 37 31 (* . 39 3 36 x r z 5 > 90
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SDA-85105-4593
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IR Z7
Abstract: TR MARKING Z7 en aw 1050
Text: setos Feed-through blocks type WK1WKN U L w ir e c o n n e c tio n v a ria tio n s 4 or or or or 2x 2x 2x 3x no. no. no. no. 14 16 18 20 s o l/s tr s o l/s tr s o l/s tr s o l/s tr 5) o r 2 x no. 12 s o l/s tr A W G o r 2 x no. 16 s o l/s tr A W G o r 3 x no. 18 s o l/s tr A W G o r 3 x no. 2 2 s o l/s tr A W G
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947-7-1/DIN
KEMA01
50019/EN
150/U
AWG-350
150/U
35x27x7
35x24x15
IR Z7
TR MARKING Z7
en aw 1050
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Untitled
Abstract: No abstract text available
Text: SSRP130B1 Application Specific Discretes DUAL ASYM M ETRICAL O VERVO LTAG E PRO TECTIO N FOR TELECOM LINE MAIN APPICATIONS Where asymmetrical protection against lightning strikes and othertransientovervoltages is required : • Solid-State relays ■ SLIC with integrated ring generator
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SSRP130B1
SSRP130B1
SSR130
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TP10N
Abstract: No abstract text available
Text: £ 7 7 SGS-THOMSON k7#s. BD glSÌ(S ilLI(@T^ liD(ei Application Specific Discretes a q 25 n TSIxxBI TER M IN AL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and
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Untitled
Abstract: No abstract text available
Text: s M T BH BT g » > 8 M'^ÉESSïliB V'5 1 Dry Circuit Sw itches i » V C N % T < V . Designed for PC Board Applications 1. Terminal pitches are all in inch size multiples of 2.54 mm . S T t 0'y ^ « ^ T Y > f L-y-'rX(2.54m m )T'r„
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Marking Code SMD zc
Abstract: No abstract text available
Text: SIEMENS 8M X 8-Bit Dynamic RAM 4k & 8k Refresh, EDO-version hYB 3164805J/T(L) -50/-60 h YB 3165805J/T(L) -50/-60 Preliminary Information • 8 388 608 words by 8-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time:
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3164805J/T
3165805J/T
HYB3164
805J/T
P-TSOPII-34-1
Marking Code SMD zc
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BAV70-A4
Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
Text: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film
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BAV70
OT-23
BAV70
C9/C20
50MHz
ZC830A
ZC831A
ZC832A
BAV70-A4
Diode Marking z3 SOT-23
diode marking w8
BAV70A
marking Z6 SOT-23 Capacitance
BAS 20 SOT23
SOT23 DIODE marking CODE AV
Z6 DIODE
BAS16
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k2847
Abstract: TOSHIBA K2847 l47c 2SK2847
Text: TOSHIBA 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS i c Q + nc: • Low Drain-Source ON Resistance
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2SK2847
k2847
TOSHIBA K2847
l47c
2SK2847
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Marking Z7
Abstract: 2SK2549
Text: TOSHIBA 2SK2549 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2549 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX.
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2SK2549
Marking Z7
2SK2549
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5962-8506401MQX
Abstract: 8506401XX 5962-8506401MXX 8506401QX 5962-8506403 527H 5962-8506402 AU-AIS vcr 2020 80C51BH
Text: MIL-M-38510/85064 REVISIONS DATE YR-MO-DA DESCRIPTION LTR Changed from DESC to military drawing format, revise table I, editorial changes throughout. 1987 Mar 23 Change 1.4. 67268. 1987 Aug 3 Add vendor CAGE 18324. Change drawing CAGE to Add case Y. Change vendor part number.
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MIL-M-38510/85064
MIL-M-38510/85064,
MIL-M-38ompliance.
5962-8506401MQX
5962-8506401MXX
5962-8506401MYX
5962-8506402MQX
5962-8506402MXX
5962-8506402MYX
5962-8506403MQX
8506401XX
8506401QX
5962-8506403
527H
5962-8506402
AU-AIS
vcr 2020
80C51BH
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CW20C104K
Abstract: K822 CZ30C105M CW20C473K CW15C103 CW15A102K CZ20C104M CW15C103K CN15A150 CW20C333K
Text: Ceramic Capacitors Series K Mono-KAP COG, X7R, Y5V AND Z5U, 50VDC, 100VDC, Conformal Coated Radial MultilayerCapacitors How to order: Parameters See Fig. 1 & 2 for part number code for OEM or distributor temp, coeff. COG, X7R, Y 5 V & Z 5 U Case Size: Voltage:
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50VDC,
100VDC,
100VDC
Cod0C474K
CW40C684K
CW40C105K
CZ15C222M
CZ15A472M
CZ15A103M
CZ15C223M
CW20C104K
K822
CZ30C105M
CW20C473K
CW15C103
CW15A102K
CZ20C104M
CW15C103K
CN15A150
CW20C333K
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DIODE W7
Abstract: No abstract text available
Text: Central“ BZX84C3V3 THRU BZX84C33 Semiconductor Corp. 350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCE DESCRIPTION: The C E N TR A L S E M IC O N D U C TO R BZX84C3V3 Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial, entertainment and
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BZX84C3V3
BZX84C33
350mW
OT-23
BZX84C
D0D1714
DIODE W7
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JLH 94 V0
Abstract: Siemens 3R marking KDL
Text: SIEM ENS 16M X 4-Bit Dynamic RAM 4k & 8k Refresh, EDO-version hYB 3164405J/T(L) -50/-60 3165405J/T(L) -50/-60 h YB Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 'C operating tem perature • Fast access and cycle time RAS access time:
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3164405J/T
3165405J/T
HYB3164
405J/T
P-TSOPII-34-1
JLH 94 V0
Siemens 3R
marking KDL
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HLS112A
Abstract: HLC208N12 HLS112D HLS308A12 HLA208K12 HLS208 HLS112 AC125V HLC208K12 MD048
Text: s Ml H m /»»> L '\ W A - H n v t i —7> ' v L C - H L S « * Miniature Rocker Switches % j£ -r "j _2l •Features- ■ 4*f f i iSJ^LfcVA^'Sglèlt(Cj:UiS$^Wfflfè^^IlL/-c^'l''y^'C- Thorough VA concept has realized the HL series
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UL94V-1)
MD0480738
IVID0430739
MD0480628
MD04810RI
MD0480621
MD0480685
MD0480711
MD0480629
MD04H0bH7
HLS112A
HLC208N12
HLS112D
HLS308A12
HLA208K12
HLS208
HLS112
AC125V
HLC208K12
MD048
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BZXB4C3V6
Abstract: BZXB4C MARKING code 0J sot23 marking Z6 z1 BZX84C4V7 Z6 DIODE BZX84C33 BZX84C3V3 BZX84C3V9 BZX84C4V3
Text: Central BZX84C3V3 THRU BZX84C33 Sem iconductor Corp. 350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCE DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R BZX84C3V3 Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial, entertainment and
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BZX84C3V3
BZX84C33
350mW
OT-23
BZX84C16
BZX84C18
BZX84C20
BZX84C22
BZX84C24
BZXB4C3V6
BZXB4C
MARKING code 0J sot23
marking Z6
z1 BZX84C4V7
Z6 DIODE
BZX84C33
BZX84C3V9
BZX84C4V3
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON [M C M iiiie r a iM D e s Application Specific Discretes A .S.D . T L P x x M S e r ie s TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE MAIN APPLICATIONS Any sensitive telecom equipm ent requiring protec tion against lightning : • Analog and ISDN line cards
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777T7
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT / ¿P D 4 2 1 6 4 0 5 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /iPD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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/iPD4216405
//PD4216405
26-pin
cycles/64
J/PD4216405-50
/xPD42O
0161o
b427525
20too5
777T7
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mb841000
Abstract: No abstract text available
Text: JW- ^ June 1992 Edition 4.0A FUJITSU DATA SHEET • MB841000-70, -85, -10 L, LL, and SL Versions CMOS 1M Low Power SRAM with Data Retention The Fujitsu MB841000 is a 131,072 word x 8 bits static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be
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MB841000-70,
MB841000
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TJ3 diode bridge
Abstract: No abstract text available
Text: POWEREX INC 15E D • 75=1^51 fOMERSr 0003^=15 T ■ r ^ z P á r íE i OPEN-BRIK Powerex, Inc., HIIHs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 P h B S B C O IlttO l
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BP107,
TJ3 diode bridge
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