3000 watts subwoofer circuit diagram
Abstract: 200w subwoofer circuit 12v 60W subwoofer CIRCUIT DIAGRAM IRF530N h bridge stereo amplifier 400W 400W low pass subwoofer circuit diagram 100 watt subwoofer circuit diagram subwoofer audio amplifier circuit diagram 500 watt audio subwoofer "subwoofer amplifiers"
Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TK2150 STEREO 200W 6Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information - Preliminary Revision 1.0 – December 2002 GENERAL DESCRIPTION
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TK2150
TC2001/TP2150
3000 watts subwoofer circuit diagram
200w subwoofer circuit
12v 60W subwoofer CIRCUIT DIAGRAM
IRF530N h bridge
stereo amplifier 400W
400W low pass subwoofer circuit diagram
100 watt subwoofer circuit diagram
subwoofer audio amplifier circuit diagram
500 watt audio subwoofer
"subwoofer amplifiers"
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TP2350B
Abstract: mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY
Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TP2150B DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER Technical Information Revision 1.7 – June 2004 GENERAL DESCRIPTION The TP2150B is a high speed, dual high side and low side MOSFET driver. The TP2150B level shifts CMOS
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TP2150B
TP2150B
TP2350B
mosfet vn10
TRIPATH TC2001
Tp2350
VN10
VN10 application
13N10
100uF 150v capacitor
what is the best speaker wattage and ohms
TRIPATH TECHNOLOGY
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VN1210N5
Abstract: BR 115N sfn02202 sfn02802 sfn02812 RRF530
Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max Of) (A) rDs (on) (Ohms) Po Max (W) 9FS Min (S) V GS<tri) Max (V) Cin Max tr Max tf Max (P) (8) (8) T Opw Max Package Style (°C) MOSFETs, N-Channel Enhancement-Type (Cont'd) . . . . 5 • . . .10
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RRF120
RRF520
UFN132
IRrj120
RRF522
SFN02802
SFN02812
SFN106A3
YTF520
IRF120
VN1210N5
BR 115N
sfn02202
RRF530
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Untitled
Abstract: No abstract text available
Text: IRF5305S/L l l l l l l l Advanced Process Technology Surface Mount IRF5305S Low-profile through-hole (IRF5305L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated TO-263 TO-262 Description The D2Pak is a surface mount power package capable of
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IRF5305S/L
IRF5305S)
IRF5305L)
O-263
O-262
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Untitled
Abstract: No abstract text available
Text: Zjï SGS-THOMSON ¡ILIOTI^OKinei IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP V d s s 100 V R d S o ii < 0.16 a Id 10 A . TYPICAL RDs(on) =0.12 £2 . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . LOW GATE CHARGE
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IRF530FP
100lse
O-22QFP
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IRF5305L
Abstract: IRF5305S
Text: PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5305S l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.06Ω
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91386C
IRF5305S/L
IRF5305S)
IRF5305L)
IRF5305L
IRF5305S
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IRF5305L
Abstract: IRF5305S
Text: PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5305S l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.06Ω
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91386C
IRF5305S/L
IRF5305S)
IRF5305L)
IRF5305L
IRF5305S
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AN-994
Abstract: IRF530N IRF530NL IRF530NS
Text: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-149-37 IRF530NS HEXFET D2Pak PD - 91352A IRF530NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology
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IRF530NS
1352A
IRF530NS/L
IRF530NS)
IRF530NL)
AN-994
IRF530N
IRF530NL
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IRF5305S
Abstract: IRF5305L
Text: PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5305S l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.06Ω
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91386C
IRF5305S/L
IRF5305S)
IRF5305L)
IRF5305S
IRF5305L
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IRF530NS
Abstract: IRF530N IRF530NL AN-994
Text: PD - 91352A IRF530NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS =100V RDS(on) = 0.11Ω G ID = 17A S
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1352A
IRF530NS/L
IRF530NS)
IRF530NL)
IRF530NS
IRF530N
IRF530NL
AN-994
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IRF5305L
Abstract: IRF5305S
Text: PD - 9.1386B IRF5305S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5305S l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.06Ω
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1386B
IRF5305S/L
IRF5305S)
IRF5305L)
IRF5305L
IRF5305S
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON i L £ra@*S IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 5 3 0 IR F 5 3 0 F I VDSS 100 100 V V FÌD S(on Id 0 .1 6 n 0 .1 6 n 16 A 10 A . • . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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IRF530
IRF530FI
O-220
ISOWATT220
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Untitled
Abstract: No abstract text available
Text: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IR F 530 IR F 5 3 0 F I . . . . . . . . V d ss R d S o ii 100 V 100 V < 0.1 6 Q. < 0.1 6 Q. Id 16 11 A A TYPICAL RDs(on) =0.12 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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IRF530
IRF530FI
IRF530/FI
ISQWATT220
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IRF530N
Abstract: 4.5v to 100v input regulator
Text: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International
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IRF530N
O-220
O-220AB
IRF530N
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International
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IRF530N
O-220
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AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.16 W This advanced TMOS power FET is designed to withstand high
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IRF530/D
IRF530
AN569
IRF530
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AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high
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IRF530/D
IRF530
AN569
IRF530
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Untitled
Abstract: No abstract text available
Text: IRF530 Product Preview TMOS E−FET. Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with a fast
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IRF530
IRF530/D
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Untitled
Abstract: No abstract text available
Text: IRF5305 TO-220AB l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET D VDSS = -55V Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
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IRF5305
O-220AB
O-220
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MAX1664
Abstract: irf530 IRF530 application
Text: IRF530 N-CHANNEL 100V - 0.12Ω - 16A TO-220 LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA TYPE IRF530 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 0.16 Ω 16 A TYPICAL RDS(on) = 0.12Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE
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O-220
IRF530
O-220
MAX1664
irf530
IRF530 application
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IRF530N
Abstract: IRF530ND
Text: IRF530ND N-Channel Enhancement-Mode MOSFET DIE TM Chip Geometry T E F N E G VDS 100V RDS ON 0.11Ω ID 17A ct u d ro P New D Source Gate G Physical Characteristics • Die size : 3890 X 1880 µm (153.1 X 74.0 mils) • Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag
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IRF530ND
IRF530N
IRF530ND
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IRF5305
Abstract: No abstract text available
Text: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier
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91385B
IRF5305
O-220
IRF5305
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IRF5305
Abstract: EPF12 borg
Text: PD - 901385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier
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901385B
IRF5305
O-220
IRF5305
EPF12
borg
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IRF5305
Abstract: 55V MOSFET P-Channel k 524 ir
Text: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier
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91385B
IRF5305
O-220
IRF5305
55V MOSFET P-Channel
k 524 ir
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