marking 1a
Abstract: CPH5901 2SC4639 2SK932 82786
Text: CPH5901 Ordering number : ENN8278A TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
|
Original
|
PDF
|
CPH5901
ENN8278A
CPH5901
2SK932
2SC4639,
marking 1a
2SC4639
82786
|
Untitled
Abstract: No abstract text available
Text: CPH5901 Ordering number : ENN8278 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
|
Original
|
PDF
|
ENN8278
CPH5901
CPH5901
2SK932
2SC4639,
|
TA3705
Abstract: No abstract text available
Text: CPH5901 Ordering number : ENN8278A CPH5901 Features • • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
|
Original
|
PDF
|
ENN8278A
CPH5901
CPH5901
2SK932
2SC4639,
TA3705
|
Untitled
Abstract: No abstract text available
Text: CPH5901 Ordering number : EN8278B SANYO Semiconductors DATA SHEET TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
|
Original
|
PDF
|
CPH5901
EN8278B
CPH5901
2SK932
2SC4639,
|
US6M1
Abstract: No abstract text available
Text: US6M1 Transistors 4V Drive Nch+Nch MOS FET US6M1 zStructure Silicon N-channel / P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. 1pin mark Basic ordering unit (pieces) 0.2 (3) 0~0.1 0.17 0.3 zEquivalent circuit Taping (6) (5) TR Code (2)
|
Original
|
PDF
|
85Max.
15Max.
US6M1
|
SMD16A
Abstract: SDK06
Text: Surface-mount MOS FET Array SDK06 under development RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12Ω VGS = 5V RG1 = 50Ω, RG2 = 10kΩ ISD = 1A, VGS = 0V 47 52 1.0 1.0 1.8 0.2 0.25 200 120 20
|
Original
|
PDF
|
SDK06
SMD-16A
SMD16A
SDK06
|
SDK06
Abstract: SMD-16A 3602 equivalent
Text: Surface-mount MOS FET Array SDK06 under development Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12Ω VGS = 5V RG1 = 50Ω, RG2 = 10kΩ ISD = 1A, VGS = 0V 52 1.0 1.0 1.8 0.2 0.25 200 120 20 2.0 7.4 3.3
|
Original
|
PDF
|
SDK06
SMD-16A
SDK06
SMD-16A
3602 equivalent
|
SDK06
Abstract: No abstract text available
Text: Surface-mount MOS FET Array SDK06 RDS ON Ciss Coss Crss t d (on) tr t d (off) tf VSD • ID — VDS Characteristics 52 1.0 1.0 57 ±1.0 100 2.5 1.8 0.2 0.25 200 120 20 VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12Ω VGS = 5V RG1 = 50Ω, RG2 = 10kΩ
|
Original
|
PDF
|
SDK06
SMD-16A
SDK06
|
2SK932
Abstract: CPH5901 2SC4639 ITR10329 ITR10330 npn fet
Text: CPH5901 注文コード No. N 8 2 7 8 A 三洋半導体データシート 半導体ニューズ No.N8278 とさしかえてください。 CPH5901 TR : NPN エピタキシァルプレーナ型シリコントランジスタ FET : N チャネル接合型シリコン電界効果トランジスタ
|
Original
|
PDF
|
CPH5901
N8278
CPH5901
2SK932
2SC4639
600mm2
ITR10347
2SK932
2SC4639
ITR10329
ITR10330
npn fet
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET Solid State Relay OCMOS FET PS7802A-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7802A-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side
|
Original
|
PDF
|
PS7802A-1A
PS7802A-1A
PS72xx
|
PS7802A-1A
Abstract: PS7802A-1A-A PS7802A-1A-F3 PS7802A-1A-F3-A
Text: DATA SHEET Solid State Relay OCMOS FET PS7802A-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7802A-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side
|
Original
|
PDF
|
PS7802A-1A
PS7802A-1A
PS72xx
PS7802A-1A-A
PS7802A-1A-F3
PS7802A-1A-F3-A
|
PS7802A-1A-A
Abstract: NEC 701 PS7802A-1A PS7802A-1A-F3
Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7802A-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7802A-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side
|
Original
|
PDF
|
PS7802A-1A
PS7802A-1A
PS72xx
PS7802A-1A-A
NEC 701
PS7802A-1A-F3
|
ps7200e
Abstract: No abstract text available
Text: Solid State Relay OCMOS FET PS7200E-1A 4-PIN SOP, 0.8 Ω LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200E-1A is a low on-state resistance solid state relay containing a GaAs LED on the light emitting side input side and MOS FETs on the output side.
|
Original
|
PDF
|
PS7200E-1A
PS7200E-1A
ps7200e
|
PS7802-1A
Abstract: PS7802-1A-F3 PS7802-1A-F4
Text: DATA SHEET Solid State Relay OCMOS FET PS7802-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE, 1-ch Optical Coupled MOS FET DESCRIPTION The PS7802-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input side and MOS FETs on the output side.
|
Original
|
PDF
|
PS7802-1A
PS7802-1A
PS72xx
PS7802-1A-F3
PS7802-1A-F4
|
|
|
ps7200e
Abstract: 200E PS7200E-1A PS7200E-1A-E3 PS7200E-1A-E4 PS7200E-1A-F3 PS7200E-1A-F4
Text: DATA SHEET Solid State Relay OCMOS FET PS7200E-1A 4-PIN SOP, 0.8 Ω LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200E-1A is a low on-state resistance solid state relay containing a GaAs LED on the light emitting side input side and MOS FETs on the output side.
|
Original
|
PDF
|
PS7200E-1A
PS7200E-1A
ps7200e
200E
PS7200E-1A-E3
PS7200E-1A-E4
PS7200E-1A-F3
PS7200E-1A-F4
|
gaas fet vhf uhf
Abstract: Pch MOS FET
Text: FET - 264 - íl ^ /i!: tr v •m 02 S K 3 1 7 « HF/VHF é : 03 ; V d s s V 180 V - Ví c i m f ' l * - Kftí (ASO) \ #*S*sn£V'„ ID(A) Pch(W)* 120 Tch(°C) 150 BÍI : HF/VHF Voss(V) 180 í ü t : •> <) 3 y N -f - + MOS FET TchCC) 150 *Te=25°C • 2SK4O9
|
OCR Scan
|
PDF
|
100MHz
28MHz)
28MHz.
MDS-30dB
725dBm
150hiA,
100mA
10dBm
gaas fet vhf uhf
Pch MOS FET
|
SD403CY
Abstract: SD403 SD403BD XSD403 high speed TTL in fet
Text: calodlc High Speed DMOS N-Channel Switch CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).
|
OCR Scan
|
PDF
|
SD403
SD403
19mmhos)
M4322
80MSec
M4322
SD403CY
SD403BD
XSD403
high speed TTL in fet
|
2SK1515
Abstract: S 437 Diode
Text: 2SK1515,2SK1516 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode tr, = 120 ns Suitable for motor control, switching regulator, DC-DC converter
|
OCR Scan
|
PDF
|
2SK1515
2SK1516
2SK1516
2SK1515,
S 437 Diode
|
diode t25 4 HO
Abstract: diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001
Text: blE D 441b2G5 DDIE^IM flbl « H I T H 2SJ117 H ITA CH I/tO PTO ELEC TR O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. • High Speed Switching.
|
OCR Scan
|
PDF
|
441bEG5
2SK310
diode t25 4 HO
diode b34
b34 diode
2SJ117
11X1
2SK310
Hitachi Scans-001
|
Untitled
Abstract: No abstract text available
Text: PRODUCT CÂTÂLOi Æiitron N-CHANNEL ENHANCEMENT MOS FET 1000V, 9A, 1.4 0 SDF9N100 GAF FEATURES • • • • • • • • RUGGED PA CKAGE HI-REL CO NS TR UC TI ON CERAMIC EY EL ET S LEAD B E ND IN G OPTIONS COPPER CORED 52 AL LO Y PINS LOW IR LOSSES
|
OCR Scan
|
PDF
|
SDF9N100
di/dt-100A/
300nS.
|
D0130
Abstract: j120 2Sk416
Text: blE D 2 S K 4 1 e • y , 44Tb205 DG13n b 4 04b I 2 S K 4 1 6 HIT4 § H ITA C H I/{O P TO E LE C TR O N IC SILICON N-CHANNELMOS FET I 4 o HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER £>Tyr* T yp e Complementary pair with 2S J120 ■ FEATURES
|
OCR Scan
|
PDF
|
2SK416L,
2SK416S
44Tb205
DG13n
D0130
j120
2Sk416
|
diode AE 83A
Abstract: No abstract text available
Text: Æ ilt r a n PRODUCT DEVICES.INC. 3301 E LEC TR O N ICS WAY. T E L : 4 0 7 8 4 e-4 3 1 1 WEST PALM BEACH. FLORID A 33407 FAX : (4 0 7 ) 8 6 3 -5 9 4 6 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 1 0 0 V, SYMBOL D r a in - s o u rc e
|
OCR Scan
|
PDF
|
SDF130
SDF130
diode AE 83A
|
Untitled
Abstract: No abstract text available
Text: Power F-MOS FET 2SK869 2SK869 Silicon N-channel Power F-M O S F E T • Package Dim ensions ■ Features • L ow ON r e s is ta n c e Rre, on : R ds (on) = 0 .3 8 0 (ty p .) Unit; mm • High sw itc h in g r a te : tr = 100ns (ty p .) • N o s e c o n d a ry b re a k d o w n
|
OCR Scan
|
PDF
|
2SK869
100ns
|
H-17
Abstract: H-18 H-19 H-22 Cti 250 H17133
Text: — S - é - iiii- A - M G50G 2CH I +MOS 307 FET • « « E JÌX - l* » 0 iiLi M G 50G 2C H 1 li I c ES V c£ = 5 0 0 V , I eg o V V cE S /c = 10m A , V c. e = 0 450 V V,h /c = 50m A , V c e = 10 V V'c e s 20 V V c £ (J0[) V ec o 7 V vF 50 A tr V cf. =
|
OCR Scan
|
PDF
|
FD-12
FD-10
FD-11
1277MN(
M24P1
H-101
H-17
H-18
H-19
H-22
Cti 250
H17133
|
