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    SDF9N100 Search Results

    SDF9N100 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SDF9N100 Solitron Devices VDS (V) =, Id Continuous Tc=25C (A) = 9, Idm Pulsed (A) = 36, RDS (On) (Ohms) = 1.... Scan PDF
    SDF9N100GAFD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100GAFS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100GAFU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100JEAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100JEAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100JEAU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100JEBD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100JEBS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100JEBU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100JECD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100JECS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100JECU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100JEDD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100JEDS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100JEDU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9N100SXH Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

    SDF9N100 Datasheets Context Search

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    SDF9N100

    Abstract: No abstract text available
    Text: PRODUCT CATÂLQQ M \itia n N-CHANNEL ENHANCEMENT MOS FET 1000V, 9A, 1.40 SDF9N100 GAF FEM U R ES • • • • • • • • RUGGED PACKAGE* HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE


    OCR Scan     		PDF SDF9N100 MIL-S-1950Ã 300hS.

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT CÂTÂLOi Æiitron N-CHANNEL ENHANCEMENT MOS FET 1000V, 9A, 1.4 0 SDF9N100 GAF FEATURES • • • • • • • • RUGGED PA CKAGE HI-REL CO NS TR UC TI ON CERAMIC EY EL ET S LEAD B E ND IN G OPTIONS COPPER CORED 52 AL LO Y PINS LOW IR LOSSES


    OCR Scan     		PDF SDF9N100 di/dt-100A/ 300nS.

    SDF9N100

    Abstract: No abstract text available
    Text: CAT ALO _ Æiittan PRODUCT N-CHANNEL ENHANCEMENT MOS FET 1000V, 9 A , 1.4 n ABSOLUTE MAXIMUM RATINGS 5DF9N100 5DF9N100 SDF9N100 5DF9N100 PARAMETER JEA JEB JEC JED FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS


    OCR Scan     		PDF 5DF9N100 SDF9N100 MIL-S-19S00 A48-1 300hS.

    Untitled

    Abstract: No abstract text available
    Text: C Â T Â L Q û_ Æ liitx a n oma^Nc. PRODUCT M . r u A M K i n N L n A lN N tL 1000V, r M U a M r r u r M T L N H A N L L r lL N I 9A, Mncr M Ub 1 .4 n SDF9N100 5DF9N100 5DF9N100 5DF9N100 FEATURES JEA JEB JEC JED • RUGGED PACKAGE • HI-REL CONSTRUCTION


    OCR Scan     		PDF SDF9N100 5DF9N100

    Untitled

    Abstract: No abstract text available
    Text: Æ SOLITRON DEVICES INC Æntron devices. MAE D • p ro d u c t ^ . VDSS Drain-source Volt. l Drain-Gate Voltage VDGR (Rg s -I.OM o ) (1) Gate-Source Voltage VGS Cont inuous Drain Current Continuous ID (Tc = 25*C) IOM Drain Current Pulsed(3) PD Total Power Dissipation


    OCR Scan     		PDF di/dt-100A/

    SDF9N100

    Abstract: No abstract text available
    Text: Æ n tro n PRODUCT D E V I Œ 5 . INC. CÂTÂL ! N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL 1000V, -9.0A. D r a in - s o u rc e V o l t . l D ra in -G a te Vo 1tage (R g s =1.0Mo ) (1) G ate-S ource V o lta g e C o n tin u o u s


    OCR Scan     		PDF 300nS, SDF9N100 MIL-S-19500

    F 407 Diode

    Abstract: No abstract text available
    Text: Untren PRODUCT D E V I C E 5 . INC. 1177 B L U E H E R O N BLVD. • RIVIERA BEACH. FLORIDA 33404 TEL: 4077 848-4311 • TLX: 51-3435 « F A X : (407 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER 1000V, UNITS Drain-source Vo 1t .(1)


    OCR Scan     		PDF SDF9N100 di/dt-100A/ fi3bfib02 F 407 Diode