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    TR 441 Search Results

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    TR 441 Price and Stock

    API Delevan HCTR-441

    FIXED IND 2.8UH 15.6A 3.6MOHM SM
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    DigiKey HCTR-441 Bulk 1,000
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    Bristol Electronics HCTR-441 1,024
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    Glenair Inc GTR44-12N

    QWIK-TY - Bulk (Alt: GTR44-12N)
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    Avnet Americas GTR44-12N Bulk 3 Weeks 1
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    Newark GTR44-12N Bulk 78 1
    • 1 $197.94
    • 10 $110.76
    • 100 $61.74
    • 1000 $61.74
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    Glenair Inc GTR44-10N

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    Newark GTR44-10N Bulk 39 1
    • 1 $182.12
    • 10 $101.9
    • 100 $56.81
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    Glenair Inc GTR44-18T

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    Newark GTR44-18T Bulk 24 1
    • 1 $223.23
    • 10 $124.91
    • 100 $69.62
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    Glenair Inc GTR44-14N-ACS1

    MILITARY ACCESSORY - Bulk (Alt: GTR44-14N-ACS1)
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    Newark GTR44-14N-ACS1 Bulk 20 1
    • 1 $215.46
    • 10 $120.56
    • 100 $67.21
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    Find more TR 441 price and stock on Findchips.com

    TR 441 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: XC9260/XC9261 シリーズ JTR05042-002 COT 制御 1.5A 降圧同期整流 DC/DC コンバータ ☆GreenOperation 対応 •概要 XC9260/XC9261 シリーズはセラミックコンデンサ対応で Pch MOS ドライバ Tr.および Nch MOS ドライバ Tr.を内蔵した同期整流タイ


    Original     		PDF XC9260/XC9261 JTR05042-002

    Untitled

    Abstract: No abstract text available
    Text: XC9262 シリーズ JTR05043-002 COT 制御 1.5A 降圧同期整流 DC/DC コンバータ ☆GreenOperation 対応 •概要 XC9262 シリーズはセラミックコンデンサ対応で Pch MOS ドライバ Tr.および Nch MOS ドライバ Tr.を内蔵した同期整流タイプの降圧


    Original     		PDF XC9262 JTR05043-002

    Untitled

    Abstract: No abstract text available
    Text: XC9259 シリーズ JTR05040-001 COT 制御 1A 降圧同期整流 DC/DC コンバータ ☆GreenOperation 対応 •概要 XC9259 シリーズはセラミックコンデンサ対応で Pch MOS ドライバ Tr.および Nch MOS スイッチ Tr.を内蔵した同期整流タイプの降


    Original     		PDF XC9259 JTR05040-001

    Untitled

    Abstract: No abstract text available
    Text: XC9260/XC9261 シリーズ JTR05042-001 COT 制御 1.5A 降圧同期整流 DC/DC コンバータ ☆GreenOperation 対応 •概要 XC9260/XC9261 シリーズはセラミックコンデンサ対応で Pch MOS ドライバ Tr.および Nch MOS ドライバ Tr.を内蔵した同期整流タイ


    Original     		PDF XC9260/XC9261 JTR05042-001

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . DIODES Diodes - Protect Against Transient Voltage Surge and ESD T VS and ESD Protection Diodes for TVS and ESD Protection Featured Products Tr a n s Z o r b A v a l a n c h e Tr a n s i e n t Vo l t a g e S u p p r e s s o r s


    Original     		PDF DiodesA9337-2726 VMN-SG2124-1401

    SMBJxxA

    Abstract: DO220A TVS diode MELF 275 SMA SMB diode guide SM6A27 DO-218AB vcut03b1-dd1 SACXX VBUS05L1 47 2L axial diode DO-219AB
    Text: V i s h ay In t e r t e c h n o l o g y, In c . Diodes - Protect Against Transient Voltage Surge and ESD I INNOVAT AND TEC O L OGY T VS and ESD Protection N HN DIODES O 19 62-2012 Diodes for TVS and ESD Protection Featured Products Tr a n s Z o r b A v a l a n c h e Tr a n s i e n t Vo l t a g e S u p p r e s s o r s


    Original     		PDF com33-4-9337-2727 VMN-SG2124-1203 SMBJxxA DO220A TVS diode MELF 275 SMA SMB diode guide SM6A27 DO-218AB vcut03b1-dd1 SACXX VBUS05L1 47 2L axial diode DO-219AB

    AO331

    Abstract: ha 1452 Y 335 STDH150 nr2d2 FD2S
    Text: Appendix Maximum Fanouts C Appendix C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.073ns, one fanout (SL = 0.00412pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2


    Original     		PDF 073ns, 00412pF) ao211 ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 ao221 AO331 ha 1452 Y 335 STDH150 nr2d2 FD2S

    T324

    Abstract: T325
    Text: ISDN MAGNETICS UPO Interface Transformer • Qualified per Bellcore TR-TSY-000357-1 TM9936 • Minimum interwinding breakdown voltage of 1500 Vrms ELECTRICAL SPECIFICATIONS at 25° C Part Number 2771J Turns Ratio ± 2% 1CT : 1.25 Primary Inductance* mH min


    Original     		PDF TM9936 TR-TSY-000357-1 2771J PEB2095 201-432-ter T324 T325

    t702 8

    Abstract: No abstract text available
    Text: MODEM MAGNETICS Global V.90 and V.34 Transformers • Intended for use in high-speed modem applications • Features very low interwinding capacitance, wellisolated windings, and low total harmonic distortion • Qualified per Bellcore TR-TSY-000357-1 TM9961


    Original     		PDF TM9961 EN60950 TR-TSY-000357-1 2778B t702 8

    BELLCORE TSY

    Abstract: 2771J PEB2095
    Text: ISDN MAGNETICS UPO Interface Transformer • Qualified per Bellcore TR-TSY-000357-1 TM00209 • Minimum interwinding breakdown voltage of 1500 Vrms ELECTRICAL SPECIFICATIONS at 25° C Part Number 2771J Turns Ratio ± 2% 1CT : 1.25 Primary Inductance* mH min


    Original     		PDF TR-TSY-000357-1 TM00209 2771J PEB2095 T2-22 BELLCORE TSY 2771J PEB2095

    2778B

    Abstract: FUSE 0300
    Text: MODEM MAGNETICS Global V.90 and V.34 Transformers • Intended for use in high-speed modem applications • Features very low interwinding capacitance, wellisolated windings, and low total harmonic distortion • Qualified per Bellcore TR-TSY-000357-1 TM00403


    Original     		PDF TM00403 EN60950 TR-TSY-000357-1 2778B FUSE 0300

    Untitled

    Abstract: No abstract text available
    Text: NOTES: REVISION B MHDMI-19-XX-X-XX-X-TR 1. REPRESENTS A CRITICAL DIMENSION. 2. MINIMUM RETENTION FORCE: 2.00N [.450 LB] 3. ROHS COMPLIANT. 4. TAPE & REEL WILL BE SUPPLIED WHETHER OR NOT-TR IS SPECIFIED. 5. FOR QUANTITIES UP TO 49 PIECES, NO LEADER, TR


    OCR Scan     		PDF MHDMI-19-XX-X-XX-X-TR UL94V-0 ISC\MKTG\MHDMI-19-XX-X-XX-X-TR-MKT-SLDDRW

    Untitled

    Abstract: No abstract text available
    Text: NOTES: REVISION C MHDMI-19-XX-X-XX-X-TR 1. REPRESENTS A CRITICAL DIMENSION. 2. MINIMUM RETENTION FORCE: 2.00N [.450 LB] 3. ROHS COMPLIANT. 4 . TAPE & REEL WILL BE SUPPLIED WHETHER OR NOT-TR IS SPECIFIED. 5. FOR QUANTITIES UP TO 49 PIECES, NO LEADER, TR


    OCR Scan     		PDF MHDMI-19-XX-X-XX-X-TR E130i, C5210 C2680

    Nanotec Electronic GmbH

    Abstract: No abstract text available
    Text: HYUNDAI REPRESENTATIVES CENTRAL REGION CANADA TECH T R EK , LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TR EK , LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TR EK , LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontano K2M 2A8


    OCR Scan     		PDF 20405S Nanotec Electronic GmbH

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C KM 44C1000ASL- 7 70 ns 20 ns 130ns KM 44C 1 00 0A S L - 8 80ns 20 ns 150ns K M 4 4 C 10OOASL-10 100ns 25 n s 18 0 n s


    OCR Scan     		PDF KM44C1000ASL 44C1000ASL- 130ns 150ns 10OOASL-10 100ns 20-LEAD

    HN27C301

    Abstract: HN27C301G HN27C101 HN27C101AG HN27C101G HN27C301AG
    Text: HN27C101 AG Series-HN27C301 AG Series 131072-word x 8-bit CMOS UV Erasable and Programmable ROM T he Hitachi HN27C101AG/HN27C301AG is a 1M b it u l tr a v i o le t e ra s a b le a n d e le c tr ic a lly program m able ROM . This device is packaged in a


    OCR Scan     		PDF HN27C101 HN27C301 131072-word HN27C101AG/HN27C301AG 32-pin AG-10/HN27C3 AG-10) HN27C101AG/HN27C301 AG-12/15/17/20/ HN27C301G HN27C101AG HN27C101G HN27C301AG

    157b

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C157B/BL/BLL 256K X 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: T h e S a m s u n g K M 4 1 6 C 1 5 7 B /B L /B L L is a C M O S h ig h tR A C tC A C tR C KM 416 C 157B /B L/B LL-5 50ns 15ns


    OCR Scan     		PDF KM416C157B/BL/BLL 110ns 130ns 150ns 40-LEAD 157b

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


    OCR Scan     		PDF CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58

    B083D

    Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
    Text: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Central Sem icon du ctor Corp. C M P F 4416A SILICON N-CHANNEL JFET DESCRIPTION: The C EN TR AL SEM ICO NDUC TO R CMPF4416A type is an epoxy molded NChannel Silicon Junction Field EffectTran$istor manufactured in an SOT-23 case, designed for VHF amplifier and mixer applications.


    OCR Scan     		PDF CMPF4416A OT-23

    diode t25 4 HO

    Abstract: diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001
    Text: blE D 441b2G5 DDIE^IM flbl « H I T H 2SJ117 H ITA CH I/tO PTO ELEC TR O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. • High Speed Switching.


    OCR Scan     		PDF 441bEG5 2SK310 diode t25 4 HO diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001

    M29XP1

    Abstract: 20D0 QQ-C-530 TEFLON MIL-P-19468 lt 626
    Text: REV. A DATE DESCRIPTION 1 2 /2 9 /0 0 UPDATE PLATING TO SILVER 3.20 [.1 2 6 ] 4.00 [.1 5 8 ] 8.30 [.3 2 7 ] RECOMMENDED CABLE STRIPPING DIM'S M29XP1.5 / cO f\| O o> tr > cm o i_n Csl T - < <J O < -1 1 .2 0 [. 4413- N0TES: FINISH (PLATING THICKNESS IN MICRO-INCHES)


    OCR Scan     		PDF M29XP1 QQ-B-626 QQ-C-530. 12D-315 213/U, 393/U 20D0 QQ-C-530 TEFLON MIL-P-19468 lt 626

    117L7

    Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
    Text: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.


    OCR Scan     		PDF 19JN8 19JN8 117L7 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7