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    MJ15016

    Abstract: 2n3055a MJ15015 2N3055 NPN Transistor
    Text: ON Semiconductort NPN 2N3055A Complementary Silicon High−Power Transistors MJ15015 * PNP MJ15016 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


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    PDF 2N3055. 2N3055A MJ15015 MJ15016 2N3055A MJ15015, MJ15015 MJ15016 2N3055 NPN Transistor

    2N3055

    Abstract: NPN Transistor 2N3055 darlington 2N6576 2N6577 2N6578
    Text: 2H6576 2H6577 2N6578 I NPN SILICON POWER DARLINGTON General-purpose EpiBase for linear and switching Replacement for 2N3055 Popular Voltage transistors, suitable and Driver Performance Diode Protection Can Be Driven from Operating darl ington applications.


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    PDF 2H6576 2H6577 2N6578 2N3055 2N3055 NPN Transistor 2N3055 darlington 2N6576 2N6577 2N6578

    2N3055* motorola

    Abstract: mj15016 motorola 2n3055 motorola 1N6073 2N3055 2N3055A MJ15015 MJ15016 MJ2955 MJ2955A
    Text: MOTOROLA Order this document by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power


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    PDF 2N3055A/D 2N3055A MJ15015* 2N3055 MJ2955. MJ2955A MJ15016* 2N3055A/D* 2N3055* motorola mj15016 motorola 2n3055 motorola 1N6073 2N3055A MJ15015 MJ15016 MJ2955 MJ2955A

    mj15015g

    Abstract: No abstract text available
    Text: 2N3055AG NPN , MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


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    PDF 2N3055AG MJ15015G MJ15016G 2N3055. 2N3055AG MJ15015G, MJ15016G 2N3055A/D mj15015g

    2N3055

    Abstract: MJ2955 mj15015 MJ15016 MJ2955 mexico 1N6073 2N3055A MJ2955A
    Text: ON Semiconductort NPN 2N3055A Complementary Silicon High-Power Transistors MJ15015 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


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    PDF 2N3055A MJ15015 2N3055 MJ2955. MJ2955A MJ15016 r14525 2N3055A/D MJ2955 mj15015 MJ15016 MJ2955 mexico 1N6073 2N3055A MJ2955A

    1N6073

    Abstract: 2N3055 2N3055A MJ15015 MJ15016 2N3055A-D 2N30
    Text: ON Semiconductort NPN 2N3055A Complementary Silicon High-Power Transistors MJ15015 * PNP MJ15016 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


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    PDF 2N3055A MJ15015 MJ15016 2N3055. r14525 2N3055A/D 1N6073 2N3055 2N3055A MJ15015 MJ15016 2N3055A-D 2N30

    MJ15015

    Abstract: 2n3055a datasheet 2n3055AG MJ15016 MJ15015 TRANSISTOR MJ15015G MJ15015 application note 1N6073 2N3055 2N3055AG
    Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


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    PDF 2N3055A MJ15015 MJ15016 MJ15015 MJ15016 2N3055. 2N3055A/D 2n3055a datasheet 2n3055AG MJ15015 TRANSISTOR MJ15015G MJ15015 application note 1N6073 2N3055 2N3055AG

    MJ15015

    Abstract: 2N3055A MJ15016 MJ15015G MJ15015 application note 2N3055AG MJ15016G 1N6073 2N3055 DC variable power with 2n3055
    Text: 2N3055A NPN MJ15015, MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


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    PDF 2N3055A MJ15015, MJ15016 MJ15015 MJ15016 2N3055. 2N3055A/D 2N3055A MJ15015G MJ15015 application note 2N3055AG MJ15016G 1N6073 2N3055 DC variable power with 2n3055

    Untitled

    Abstract: No abstract text available
    Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


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    PDF 2N3055A MJ15015 MJ15016 MJ15015 MJ15016 2N3055. 2N3055A/D

    Untitled

    Abstract: No abstract text available
    Text: 2N3055A SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO3 MAXIMUM RATINGS IC 15 A IB 7.0 A VCE 60 V PDISS 115 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC


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    PDF 2N3055A 2N3055A

    2N3055A

    Abstract: Vce(sat) MJ2955A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A


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    PDF 2N3055A MJ2955A 2N3055A Vce(sat) MJ2955A

    2N3055A

    Abstract: MJ2955A
    Text: SavantIC Semiconductor Product Specification 2N3055A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type MJ2955A ·Excellent Safe Operating Area APPLICATIONS ·For high power audio ,stepping motor and other linear applications


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    PDF 2N3055A MJ2955A 60Vdc 2N3055A MJ2955A

    Untitled

    Abstract: No abstract text available
    Text: ^zmi-Conductoi 'LPtoaucti, Dna. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 NPN 2N3055A Complementary Silicon High-Power TVansistors MJ15015 . . PowerBase complementary transistors designed for high


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    PDF 2N3055A MJ15015 2N3055 MJ2955. MJ2955A MJ15016 2N3055A MJ15015 MJ2955A

    Untitled

    Abstract: No abstract text available
    Text: c^ Jstisii*/ <£s.m.i-(lon.<Licko\ Una. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN 2N3055A Complementary Silicon High-Power TVansistors MJ15015 . . PowerBase complementary transistors designed for high


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    PDF 2N3055A MJ15015 2N3055 MJ2955. MJ2955A MJ15016 TQ-204AA 550REF

    RCA 40251

    Abstract: rca 2n6254 2N3055H RCA 40251 2N3055H 2N6254 2N6253 2n6254 rca 2N6371 S 40251
    Text: SEMELAB UIIHB POWER TR A N S ISTO R S 2N3055H, 2 N 6 2 5 3 , 2N 6254, 2N6371, 40251 H o m e ta x ia l-B a s e High-Power Silicon N -P -N Transistors • 2 N 6 2 5 4 : prem ium type fro m 2 N 3 0 5 5H Rugged, Broadly Applicable Devices For Industrial and Commercial Use


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    PDF 2N3055H, 2N6253, 2N6254, 2N6371, 2N3055H 2N6253 2N6254 RDF-10: RCA 40251 rca 2n6254 2N3055H RCA 40251 2N6254 2n6254 rca 2N6371 S 40251

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    2N3065

    Abstract: MJ16015 mj15015 MJ15016 2N3055A 2N3065A 3055A 2N3055* motorola
    Text: D FJt.3t.7SS4 n O T O R O L A SC -CXSTRS/R F> 6367254 MOTOROLA, SC XSTRS/R D 96D 8 0 2 7 5 F DDflOaTS T r i ^ b L ~ r ~ 3 3 - s ^ MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA NPN PNP 2N3055A MJ15015 MJ2955A MJ15016 C O M P L E M E N T A R Y S IL IC O N HIGH-POW ER TR A N SISTO R S


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    PDF 2N3055A MJ15015 MJ2955A MJ15016 2N3065 MJ16015 mj15015 MJ15016 2N3065A 3055A 2N3055* motorola

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    N3055

    Abstract: ZDT30 2N3440 2N3055 2N3439 ZT1480 ZT1482 ZT1484 ZT1486 ZT1488
    Text: S ILIC O N TR A N SISTO R S High Voltage n-p-n The transistors listed in the table below have maximum coliector-emitter voltage ratings of 100 volts or higher and may therefore be used in applications where high voltages are encountered. Further information on these transistors can be found on the page indicated in the last column of the table, or on request from Ferranti Ltd.


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    PDF ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 N3055 ZDT30

    2n3054

    Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
    Text: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c ­ to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include


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    PDF edi358 TA7557 TA7611 TA7612 TA7639 TA7640 TA7719 TA7739 TA7740 TA7741 2n3054 RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147

    Untitled

    Abstract: No abstract text available
    Text: 2N3055A m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T03 U 4J MAXIMUM RATINGS 7.0 A VCE p 1 DISS T 60 V .65 5 -675 115 W @ T c = 25°C -65 °C to +200 °C "^"sTG


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    PDF 2N3055A 2N3055A

    2N30S5

    Abstract: 2N305
    Text: 2N3055A 2N3055A NPN POWER TRANSISTOR High Power Audio, Stepping Motor and Other Linear Applications DIM A B C D E F G H J K I M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15 11,15 12,25 26,67 3,84 4,19 - PIN CONFIGURATION


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    PDF 2N3055A 2N30S5A 2N30S5 2N305

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN POWER TRANSISTOR IT ¡electronics . Semelab Limited 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally Suited For General Purpose Switching Screening Options Available


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    PDF 2N3055

    Transistor 2n3055

    Abstract: power transistor 2n3055 t03 package transistor pin dimensions tr 2n3055 2N3055 2n3055 pin
    Text: SILICON NPN POWER TRANSISTOR IT ¡electronics . Semelab Limited 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally Suited For General Purpose Switching Screening Options Available


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    PDF 2N3055 Transistor 2n3055 power transistor 2n3055 t03 package transistor pin dimensions tr 2n3055 2N3055 2n3055 pin