la 4127
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E11
la 4127
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E12
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E12
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E12
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E10
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E14
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Abstract: No abstract text available
Text: MMBTA06WT1 Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model − 4 kV ESD Rating: Machine Model − 400 V http://onsemi.com Features • Pb−Free Package May be Available. The G−Suffix Denotes a COLLECTOR 3 Pb−Free Lead Finish
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MMBTA06WT1
SC-70
MMBTA06WT1
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E13
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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S7030/S7031
SE-171
KMPD1023E13
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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SE-171
KMPD1023E14
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Untitled
Abstract: No abstract text available
Text: BSL207SP Rev. 2.02 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS on 41 mΩ • Super Logic Level (2.5 V rated) ID -6 A • 150°C operating temperature P-TSOP6-6 • Avalanche rated • dv/dt rated
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BSL207SP
L6327
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BP317
Abstract: BSX20 TRANSISTOR bsx20
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BSX20 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 14 Philips Semiconductors Product specification NPN switching transistor BSX20
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M3D125
BSX20
MAM264
SCA54
117047/00/02/pp8
BP317
BSX20
TRANSISTOR bsx20
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Untitled
Abstract: No abstract text available
Text: BSL207SP Rev. 2.05 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS on 41 mΩ • Super Logic Level (2.5 V rated) ID -6 A • 150°C operating temperature P-TSOP6-6 • Avalanche rated • dv/dt rated
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BSL207SP
IEC61249Â
H6327
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2SA1007
Abstract: 2SA1007A 2SC2337A C2337A A1007A 2SC2337 72-SA
Text: SEC SILICON POWER TRANSISTORS ELEC TR O N DEVICE 2SA1007,2SA1007A/2SC2337,2SC2337A AU DIO FREQUENCY POWER AM PLIFIER,HIG H FREQUENCY POWER AM PLIFIER AND HIGH CURRENT SW ITCHING PNP/N PN SILICON EPITAXIAL TRANSISTOR BUILT IN EMITTER BALLAST RESISTORS DESCRIPTION
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2SA1007
2SA1007A/2SC2337
2SC2337A
2SA1007
2SA1007A
2SC2337
2SC2337A
C2337A
A1007A
2SC2337
72-SA
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tr 1007 transistor
Abstract: No abstract text available
Text: TO SH IB A TA8490F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP TA8490F 3-PHASE FULL WAVE BRUSHLESS DC MOTOR DRIVER IC FOR CD-ROM DRIVES This 3-phase, full-wave, brushless DC motor driver 1C has been developed for use in CD-ROM drive spindle motors.
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TA8490F
TA8490F
-P-375
RN6006
SSOP30-P-375-1
tr 1007 transistor
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TA8490F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP TA8490F 3-PHASE FULL WAVE BRUSHLESS DC MOTOR DRIVER IC FOR CD-ROM DRIVES This 3-phase, full-wave, brushless DC motor driver 1C has been developed for use in CD-ROM drive spindle motors.
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TA8490F
TA8490F
RN6006
SSOP30-P-375-1
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PN2907A
Abstract: PN2907
Text: PN2907 PN2907A _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in plastic TO-92 package fo r general purpose applications. N-P-N complement is PN2222/A. QUICK REFERENCE D A T A PN2907 PN2907A
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PN2907
PN2907A
PN2222/A.
PN2907A
PN2907
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VPT09051
Abstract: VPT09050 SPD01N50M2 SPU01N50M2 DIODE MARKING CODE 623
Text: In fin eon SPU01N50M2 SPD01N50M2 Target data sheet technologies Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/df rated • Optimized capacitances • Improved noise immunity
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SPUx7N60S5/SPDx7N60S5
SPU01N50M2
SPD01N50M2
VPT09050
VPT09051
SPU01N50M2
P-T0251
01N50M2
Q67040-S4324
VPT09051
VPT09050
SPD01N50M2
DIODE MARKING CODE 623
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Microwave Oven Inverter Control IC
Abstract: No abstract text available
Text: PaiKföonic Others AN6718N Microwave Oven Inverter Control 1C • Overview The AN6718N is an IC for resonance type inverter con trol of microwave oven. It can directly control the IGBT Insulated Gate Bipolar Transistor and incorporates the various protective functions.
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AN6718N
AN6718N
i32fiS2
Microwave Oven Inverter Control IC
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Irgbc20fd2
Abstract: No abstract text available
Text: International PD - 9.788 ^Rectifier IRGBC20FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECO VERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all “tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGBC20FD2
10kHz)
T0-22QAB
C-100
Irgbc20fd2
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 346 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode vvoyss ' fé i • Avalanche-rated Pin 1 Pin 2 G Type B U Z 346 Vbs 50 V b 58 A flDS on 0.018 n Pin 3 D S Package Ordering Code TO-218AA C67078-S3120-A2 Maximum Ratings
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O-218AA
C67078-S3120-A2
flE35b05
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transistor 7g
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PHP10N10E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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PHP10N10E
T0220AB
transistor 7g
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MC 140 transistor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PINNING - SQT404 PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation Junction temperature Drain-source on-state resistance
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BUK7614-55
SQT404
MC 140 transistor
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D11AL
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PHP10N10E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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PHP10N10E
T0220AB
D11AL
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