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    pj 89 diode

    Abstract: 2N6770
    Text: MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet 2N 6770 P o w e r Field E ffe ct T ra n sisto r N -C h ann el E n h an cem en t-M od e S ilic o n G ate T M O S TM O S POWER FET 12 AMPERES These TM O S Pow er FETs are designed fo r h ig h v o lt­


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    2N6770 1950rM V115M. TQZ04AA pj 89 diode PDF