TPT5610
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5610 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25℃) 3. BASE Collector current -1 A ICM: Collector-base voltage -25 V
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O-92L
TPT5610
O-92L
-500mA
-800mA,
-80mA
TPT5610
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TPT5610
Abstract: TPT5609
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5610 z z z TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Excellent linearity of Current Gain Low saturation voltage Complementary to TPT5609 MAXIMUM RATINGS 2. COLLECTOR
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PDF
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O-92L
TPT5610
O-92L
TPT5609
-500mA
-800mA,
-80mA
TPT5610
TPT5609
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TPT5610
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5610 z z z TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Excellent Linearity of Current Gain Low saturation voltage Complementary to TPT5609 MAXIMUM RATINGS 2. COLLECTOR
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Original
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PDF
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O-92L
TPT5610
O-92L
TPT5609
-500mA
-800mA,
-80mA
TPT5610
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TPT5610
Abstract: 85170 TPT5609 3700 transistor TO-92L IC 7800
Text: TPT5610 TO-92L Transistor PNP TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 7.800 8.200 3. BASE Features 1 2 3 0.600 0.800 Excellent linearity of Current Gain Low saturation voltage Complementary to TPT5609 MAXIMUM RATINGS 0.350 0.550 13.800 14.200
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Original
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PDF
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TPT5610
O-92L
O-92L
TPT5609
-500mA
-800mA,
-80mA
TPT5610
85170
TPT5609
3700 transistor
TO-92L
IC 7800
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TPT5609
Abstract: TPT5610 TO-92L
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5609 TO-92L TRANSISTOR NPN 1. EMITTER FEATURES z Excellent linearity of Current Gain z Low saturation voltage z Complementary to TPT5610 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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Original
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PDF
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O-92L
TPT5609
O-92L
TPT5610
500mA
800mA,
TPT5609
TPT5610
TO-92L
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5610 z z z TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Excellent linearity of Current Gain Low saturation voltage Complementary to TPT5609 MAXIMUM RATINGS 2. COLLECTOR
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Original
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PDF
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O-92L
TPT5610
O-92L
TPT5609
-500mA
-800mA,
-80mA
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TPT5610
Abstract: No abstract text available
Text: TPT5610 TPT5610 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25℃) 3. BASE Collector current ICM: -1 A Collector-base voltage -25 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃
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PDF
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TPT5610
O-92L
-500mA
-800mA,
-80mA
TPT5610
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TO-92L
Abstract: TPT5609 TPT5610 TO 92L NPN Transistor
Text: TPT5609 TO-92L Transistor NPN TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 3. BASE Features 1 2 7.800 8.200 3 0.600 0.800 Excellent linearity of Current Gain Low saturation voltage Complementary to TPT5610 0.350 0.550 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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Original
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PDF
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TPT5609
O-92L
O-92L
TPT5610
500mA
800mA,
TO-92L
TPT5609
TPT5610
TO 92L NPN Transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5609 TRANSISTOR NPN TO-92L FEATURES z Excellent Linearity of Current Gain z Low saturation voltage z Complementary to TPT5610 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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Original
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PDF
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O-92L
TPT5609
O-92L
TPT5610
500mA
800mA,
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