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    TPM1 Price and Stock

    3peak Incorporated TPM1525-SO1R-S

    H-BRIDGE DRIVER 150V 8-SOP
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    DigiKey TPM1525-SO1R-S Cut Tape 8,000 1
    • 1 $4.12
    • 10 $2.717
    • 100 $1.9435
    • 1000 $1.52281
    • 10000 $1.52281
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    3peak Incorporated TPM16050-S6TR

    H-BRIDGE DRIVER IC STO23-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TPM16050-S6TR Digi-Reel 5,469 1
    • 1 $0.43
    • 10 $0.351
    • 100 $0.2392
    • 1000 $0.13453
    • 10000 $0.13453
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    TPM16050-S6TR Cut Tape 5,469 1
    • 1 $0.43
    • 10 $0.351
    • 100 $0.2392
    • 1000 $0.13453
    • 10000 $0.13453
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    TPM16050-S6TR Reel 3,000 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.11585
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    STMicroelectronics STPM10BTR

    IC ENERGY METER 1 PHASE 20TSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STPM10BTR Digi-Reel 2,668 1
    • 1 $2.89
    • 10 $2.599
    • 100 $2.1294
    • 1000 $1.52882
    • 10000 $1.52882
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    STPM10BTR Cut Tape 2,668 1
    • 1 $2.89
    • 10 $2.599
    • 100 $2.1294
    • 1000 $1.52882
    • 10000 $1.52882
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    STPM10BTR Reel 2,500 2,500
    • 1 -
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    • 1000 -
    • 10000 $1.39778
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    Avnet Americas STPM10BTR Reel 30 Weeks 2,500
    • 1 -
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    • 1000 -
    • 10000 $1.34069
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    STMicroelectronics STPM10BTR 1
    • 1 $2.83
    • 10 $2.54
    • 100 $2.08
    • 1000 $1.77
    • 10000 $1.77
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    Avnet Silica STPM10BTR 2,500 17 Weeks 2,500
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    Chip1Stop STPM10BTR Cut Tape 2,460
    • 1 $1.87
    • 10 $1.68
    • 100 $1.52
    • 1000 $1.51
    • 10000 $1.43
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    EBV Elektronik STPM10BTR 31 Weeks 2,500
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    South Electronics STPM10BTR
    • 1 -
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    Banner Engineering Corp STP-M12D-406

    CBL ASSY CIRC 4P M TO RJ45 6'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STP-M12D-406 Box 10 1
    • 1 $58
    • 10 $58
    • 100 $58
    • 1000 $58
    • 10000 $58
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    Mouser Electronics STP-M12D-406 5
    • 1 $58
    • 10 $58
    • 100 $58
    • 1000 $58
    • 10000 $58
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    Newark STP-M12D-406 Bulk 1
    • 1 $58
    • 10 $58
    • 100 $58
    • 1000 $58
    • 10000 $58
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    Neutron USA STP-M12D-406 12
    • 1 $132.22
    • 10 $132.22
    • 100 $132.22
    • 1000 $132.22
    • 10000 $132.22
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    Banner Engineering Corp STP-M12-815

    CBL ASSY CIRC 8P M TO RJ45 15'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STP-M12-815 Box 8 1
    • 1 $83
    • 10 $83
    • 100 $83
    • 1000 $83
    • 10000 $83
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    Mouser Electronics STP-M12-815 1
    • 1 $83
    • 10 $83
    • 100 $83
    • 1000 $83
    • 10000 $83
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    RS STP-M12-815 Bulk 1 1
    • 1 $83
    • 10 $83
    • 100 $83
    • 1000 $83
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    Find more TPM1 price and stock on Findchips.com

    TPM1 Datasheets (105)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPM-10 Eaton Uncategorized - Miscellaneous - TPM 10 AMP FUSE Original PDF
    TPM10105 Traco Electronic DC/DC-Converter Original PDF
    TPM10105 Traco Electronic Mini Switcher Original PDF
    TPM10105 XP Power AC to DC Power Supply: Desktop: 5V Output Original PDF
    TPM10105C Traco Electronic DC/DC-Converter Original PDF
    TPM10105C Traco Electronic Mini Switcher Original PDF
    TPM10105C XP Power AC to DC Power Supply: Desktop: 5V Output Original PDF
    TPM10112 Traco Electronic DC/DC-Converter Original PDF
    TPM10112 Traco Electronic Mini Switcher Original PDF
    TPM10112C Traco Electronic DC/DC-Converter Original PDF
    TPM10112C Traco Electronic Mini Switcher Original PDF
    TPM10112C XP Power AC to DC Power Supply: Desktop: 12V Output Original PDF
    TPM10124 Traco Electronic Mini Switcher Original PDF
    TPM10124 Traco Electronic DC/DC-Converter Original PDF
    TPM10124C Traco Electronic Mini Switcher Original PDF
    TPM10124C Traco Electronic DC/DC-Converter Original PDF
    TPM10212 Traco Electronic Mini Switcher Original PDF
    TPM10212 Traco Electronic DC/DC-Converter Original PDF
    TPM10212 XP Power AC to DC Power Supply: Desktop: 12V/-12V Output Original PDF
    TPM10212C Traco Electronic DC/DC-Converter Original PDF

    TPM1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HEADER 10X2

    Abstract: PTG1 diode u2 40 HEADER 10X2 datasheet rx1 tx1 MC13192 MC9S08GT60 bkgd 10X2A
    Text: 5 4 3 2 1 DLP-RF2 MODULE 1 2 JP1 Reset Defaults D D ANTCTRLA7 U2 32 33 34 35 36 37 38 39 1 2 JP2 A6 ANTCTRLA7 PTA0/KBIP0 PTA1/KBIP1 PTA2/KBIP2 PTA3/KBIP3 PTA4/KBIP4 PTA5/KBIP5 PTA6/KBIP6 PTA7/KBIP7 IRQ 18 19 20 21 ANTCTRLD4 PTD0/TPM1CH0 PTD1/TPM1CH1 PTD3/TPM2CH0


    Original     		PDF 1uF/0603 470K/0603 MC13192 MC9S08GT60 HEADER 10X2 PTG1 diode u2 40 HEADER 10X2 datasheet rx1 tx1 MC13192 MC9S08GT60 bkgd 10X2A

    TPM1818-30

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-30 High Power GaAs FETs L, S-Band Features • High power - P1dB = 44.5 dBm at 1.8 GHz • High gain - G1dB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)


    Original     		PDF TPM1818-30 CharactTPM1818-30 2-16G1B) MW40020196 TPM1818-30

    TMD1414-2

    Abstract: TGM9398-25 8596-50
    Text: Product Guide 2014 Microwave Semiconductors GaAs MMICs L and S-band Partially Matched Power GaAs FETs Pout vs. Frequency Map 80 49 48 60 TPM2828-60❋ TPM1919-60 40 46 44 ● Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs . 3


    Original     		PDF TPM2828-60â TPM1919-60 TPM2828-9â TMD0708-2 TMD0608-4 TMD7185-2 TMD5872-2 TMD1925-3 TMD1013-1-431 TMD0507-2A TMD1414-2 TGM9398-25 8596-50

    Untitled

    Abstract: No abstract text available
    Text: TPM12/100-5/500 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 12ñ Load Current Max. (A)100m P(D) Max. (W) Nom. Supp (V) Minimum Operating Temp (øC) Maximum Operating Temp (øC) Package StyleModule Mounting StyleT Pinout Equivalence Code7-128


    Original     		PDF TPM12/100-5/500 Code7-128 NumberLN00700128 -12V/100mA V/500mA

    Untitled

    Abstract: No abstract text available
    Text: TPM15/100-5/500 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 15ñ Load Current Max. (A)100m P(D) Max. (W) Nom. Supp (V) Minimum Operating Temp (øC) Maximum Operating Temp (øC) Package StyleModule Mounting StyleT Pinout Equivalence Code7-128


    Original     		PDF TPM15/100-5/500 Code7-128 NumberLN00700128 -15V/100mA V/500mA

    SLB9635TT

    Abstract: 8111C Winbond W83627DHG SLB9635TT infineon W83627DHG Infineon SLB9635tt ALC888 via award motherboard VGA 20 PIN LCD MONITOR CABLE CONNECTION DIAGRAM F81216D
    Text: AIMB-210 Intel ATOM Mini-ITX with VGA/LVDS, 6 COM, and Dual LAN Features NEW • Intel® ATOM Mini-ITX motherboard supports N270 1.6 GHz processor • One 200-pin SODIMM up to 2 GB DDR2 533 SDRAM  Supports dual display for VGA, LVDS, and TV-Out  Built with 6 serial ports, 8 USB, CF, 2LAN and TPM1.2 optional


    Original     		PDF AIMB-210 200-pin 09-Nov-2009 SLB9635TT 8111C Winbond W83627DHG SLB9635TT infineon W83627DHG Infineon SLB9635tt ALC888 via award motherboard VGA 20 PIN LCD MONITOR CABLE CONNECTION DIAGRAM F81216D

    TPM1919-60

    Abstract: tpm1919 2-16G6A
    Text: MICROWAVE POWER GaAs FET TPM1919-60 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=48.0dBm at 1.96GHz „ HIGH GAIN G1dB=13.0dB at 1.96GHz „ PARTIALLY MATCHED TYPE „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS


    Original     		PDF TPM1919-60 96GHz 300mA IDS12 IDS12A TPM1919-60 tpm1919 2-16G6A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF TPM1818-30 2-16G1B) MW40020196

    TPM1617

    Abstract: TPM1617-8
    Text: TOSHIBA MICROWAVE MICROWAVE POWER G aAs FET S E M IC O N D U C T O R TPM1617-8 TECHNICAL DATA FEATURES: • HIGH POWER PidB ~ 3 9 .5 dBm at 1.6 GHz to 1 .7 GHz PARTIALLY ■ HIGH GAIN G“jdB = 13 dB at 1.6 GHz to 1.7 GHz HERMETICALLY SEALED PACKAGE MATCHED TYPE


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-14 High Power GaAs FETs L, S-Band Features • High power - P idB = 42.0 • High gain dBm at 1.8 GHz - G idB = 14.0 dB at 1.8 GHz • Partially m atched type • H erm etically sealed package Unit Min. Typ. Max dBm


    OCR Scan     		PDF TPM1818-14 2-11D1B)

    TPM1919

    Abstract: TPM1919-40
    Text: TPM1919-40 FEATURES: • H IG H PO W ER ■ PARTIALLY M A T C H E D TYPE ■ H E R M E T IC A LL Y SEA LED PACKAGE P-idB = 46. 0 dB m at 1. 9 G H z ■ H IG H GAIN GidB = 13 dB 3t 1. 9 G H z RF PERFO RM AN CE SPEC IFIC A TIO N S Ta = 25 °C C H A R A C TE R IS T IC S


    OCR Scan     		PDF TPM1919-40 TPM1919-40 TPM1919

    IRS12

    Abstract: No abstract text available
    Text: TPM1919-40 PRELIMINARY May 1996 TOSHIBA TPM1919-40 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS SYMBOL Output Power at 1dB Compression Point Pi dB Power Gain at 1dB Compression Point Gl dB Drain Current Power Added Efficiency CONDITION VDS- ÍOV


    OCR Scan     		PDF TPM1919-40 170mA -500A IRS12

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 1.8 GHz • High gain - G-idB = 12 dB at 1.8 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF TPM1818-30 2-16G1B) MW40020196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-14 High Power GaAs FETs L, S-Band Features • High power - P idB = 42.0 dBm at 1.8 GHz • High gain - G-jdB = 14.0 dB at 1.8 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF TPM1818-14 2-11D1B)

    TPM1919-40

    Abstract: SO47 TPM1919-40-311
    Text: TPM1919-40-311 FEA TU RES: • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE P 1dB = 47.0 dB m at 1.9 GHz ■ HIGH GAIN G 1dB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS SYMBOL Output Power at 1dB Compression Point


    OCR Scan     		PDF TPM1919-40-311 11-OA TPM1919-40- TPM1919-40 SO47 TPM1919-40-311

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDU CTO R TPM1818-14 TECHNICAL DATA FEATURES : • HIGH POWER PARTIALLY MATCHED TYPE ■ p ld B = 41.5 dBm at 1-8 GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB = 12.0 dB at 1.8 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C


    OCR Scan     		PDF TPM1818-14

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROW AVE SEM ICO NDU CTO R TPM1919—40 TECHNICAL DATA FEATURES : • HIGH POWER ■ HIGH GAIN ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE pidB = 46. 0 dBm at 1. 9 GHz GidB = 13 dB at 1.9 GHz RF PER FO R M A N C E SPEC IFIC A TIO N S Ta = 2 5 °C


    OCR Scan     		PDF --TPM1919-40" TPM1919-40

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MICROWAVE POWER G aAs FET M ICROW AVE SEM ICO NDU CTO R TPM1818-30 TECHNICAL DATA FEATURES: • HIGH POWER ■ HIGH GAIN ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE pidB = 44.5 dBm at 1.8 GHz G-idB = ^2 dB at 1.8 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C


    OCR Scan     		PDF TPM1818-30 inch-off700

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-14 High Power GaAs FETs L, S-Band Features • High power " P-idB = 42.0 • High gain dBm at 1.8 G H Z - G idB = 14.0 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF TPM1818-14 2-11D1B) MW40010196

    TPM1617

    Abstract: TPM1617-8
    Text: High Power GaAs FET L, S-Band TPM1617-8 FEATURES: • HIGH POWER P ld B = 39.5 dBm at 1.6 GHz to 1 .7GHz ■ PARTIALLY MATCHED TYPE ■ HIGH GAIN GldB = 13 dB at 1.6 GHz to 1.7 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS (Ta = 25°C)


    OCR Scan     		PDF TPM1617-8 TPM1617 TPM1617-8

    TPM1919-40

    Abstract: No abstract text available
    Text: TPM1919-40 PRELIMINARY May 1996 TOSHIBA TPM1919-40 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL CONDITION Ta= 25°C Ì MIN. TYP. 45.0 46.0 dBm 12.0 13.0 dB MAX. UNIT Output Power at 1dB Compression Point Pi dB Power Gain at 1dB Compression Point


    OCR Scan     		PDF TPM1919-40 170mA TPM1919-40

    TPM1919-40

    Abstract: No abstract text available
    Text: T O S H IB A MICROWAVE POWER G aAs FET MICROW AVE SEM ICO NDUCTOR TPM1919-40-311 TECHNICAL DATA FEATURES : • HIGH POWER ■ HIGH GAIN PARTIALLY MATCHED TYPE P-idB = 47.0 dBm at 1.9 G Hz ■ HERMETICALLY SEALED PACKAGE ^idB = 13 dB at 1.9 GHz RF PERFO RM AN CE SPECIFICATIO NS Ta = 2 5 °C


    OCR Scan     		PDF TPM1919-40-311 2-16G6A) TPM1919-40-311------ TPM1919-40-311 TPM1919-40

    TPM1617-16

    Abstract: TPM1617
    Text: TPM1617-16 FEATURES: • HIGH POWER PldB = 42.5 dBm at 1.6 GHz to 1 .7 GHz > PARTIALLY MATCHED TYPE ■ HIGH GAIN GldB = 1 3 d B at 1,6 GHz to 1.7 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS Output Power at 1 dB Com­


    OCR Scan     		PDF -TPM1617-16 13dBat RCH725G QD2ET75 TPM1617-16 TPM1617

    tpm1919

    Abstract: TPM1919-60
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-60 TECHNICAL DATA FEATURES : • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE P-idB = 48.0 dBm at 1.9 GHz ■ HIGH GAIN G1dB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C


    OCR Scan     		PDF TPM1919-60 -TPM1919-60 tpm1919 TPM1919-60