TPCF8306
Abstract: No abstract text available
Text: TPCF8306 MOSFETs Silicon P-Channel MOS U-MOS TPCF8306 1. Applications • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)
|
Original
|
PDF
|
TPCF8306
TPCF8306
|
Untitled
Abstract: No abstract text available
Text: TPCF8306 MOSFETs Silicon P-Channel MOS U-MOS TPCF8306 1. Applications • Power Management Switches 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)
|
Original
|
PDF
|
TPCF8306
|
Untitled
Abstract: No abstract text available
Text: TPCF8306 MOSFETs Silicon P-Channel MOS U-MOS TPCF8306 1. Applications • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)
|
Original
|
PDF
|
TPCF8306
|
toshiba laptop charging CIRCUIT diagram
Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5
|
Original
|
PDF
|
BCE0082H
toshiba laptop charging CIRCUIT diagram
TPC8123
TPH1400ANH
TPCA8047-H
TPC 8127
TPC8123 cross reference
SSM3J328R
SSM3J334R
TPC8120
|
TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4
|
Original
|
PDF
|
|
