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    TPCF8 Price and Stock

    Toshiba America Electronic Components TPCF8A01(TE85L)

    MOSFET N-CH 20V 3A VS-8
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    DigiKey TPCF8A01(TE85L) Reel 4,000
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    Toshiba America Electronic Components TPCF8304(TE85L,F,M

    MOSFET 2P-CH 30V 3.2A VS-8
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    Toshiba America Electronic Components TPCF8B01(TE85L,F,M

    MOSFET P-CH 20V 2.7A VS-8
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    Toshiba America Electronic Components TPCF8201(TE85L,F,M

    MOSFET 2N-CH 20V 3A VS-8
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    DigiKey TPCF8201(TE85L,F,M Digi-Reel 1
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    TPCF8201(TE85L,F,M Reel
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    Toshiba America Electronic Components TPCF8402(TE85L,F,M

    MOSFET N/P-CH 30V 4A/3.2A VS-8
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    TPCF8402(TE85L,F,M Digi-Reel 1
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    Quest Components TPCF8402(TE85L,F,M 800
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    Find more TPCF8 price and stock on Findchips.com

    TPCF8 Datasheets (69)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TPCF8001 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPCF8001 Toshiba MOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: VS-8; Application Scope: mobile; R DS On (max 0.031) (max 0.023); I_S (A): (max 7) Original PDF
    TPCF8001 Toshiba MOSFET TPC Series Scan PDF
    TPCF8003 Toshiba Transistors - Mosfets Original PDF
    TPCF8003 Toshiba Japanese - Transistors - Mosfets Original PDF
    TPCF8003 Toshiba TPCF8003 - TRANSISTOR 7000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-3U1A, 8 PIN, FET General Purpose Small Signal Original PDF
    TPCF8004 Toshiba Transistors - Mosfets Original PDF
    TPCF8004 Toshiba Japanese - Transistors - Mosfets Original PDF
    TPCF8004 Toshiba TPCF8004 - Nch VDSS =30V Original PDF
    TPCF8101 Toshiba power MOSFET Original PDF
    TPCF8101 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPCF8101 Toshiba Pch Power MOSFET; Surface Mount Type: N; Package: VS-8; R DS On (max 0.085) (max 0.04) (max 0.028); I_S (A): (max -6) Original PDF
    TPCF8101(TE85L,F,M Toshiba TPCF8101 - X35 PB-F POWER MOSFET TRANSISTOR VS-8 MOQ=4000 V=-12 PD=2.5W Original PDF
    TPCF8101(TE85L,F,M Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 6A VS-8 Original PDF
    TPCF8102 Toshiba Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) Original PDF
    TPCF8102 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPCF8102(TE85L,F,M Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6A VS8 2-3U1A Original PDF
    TPCF8103 Toshiba MOSFET TPC Series Original PDF
    TPCF8103 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPCF8103 Toshiba Pch Power MOSFET; Surface Mount Type: Y; Package: VS-8; R DS On (max 0.3) (max 0.16) (max 0.11); I_S (A): (max -2.7) Original PDF

    TPCF8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TPCF8402

    Abstract: No abstract text available
    Text: TPCF8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type U-MOS IV / U-MOS III TPCF8402 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • • • • Unit: mm Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.)


    Original     		PDF TPCF8402 TPCF8402

    TPCF8301

    Abstract: No abstract text available
    Text: TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8301 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8301 TPCF8301

    toshiba f5d

    Abstract: TPCF8304
    Text: TPCF8304 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIV TPCF8304 ○ ノートブックＰＣ用 単位: mm ○ 携帯電子機器用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs| = 5.9S (標準)


    Original     		PDF TPCF8304 toshiba f5d TPCF8304

    TPCF8201

    Abstract: No abstract text available
    Text: TPCF8201 東芝電界効果トランジスタ シリコンＮチャネルMOS形 U-MOSIII TPCF8201 ○ 携帯電子機器用 単位: mm ○ ＤＣ－ＤＣコンバ－タ用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS(ON) = 38 mΩ (標準)


    Original     		PDF TPCF8201 TPCF8201

    2A101

    Abstract: TPCF8101
    Text: TPCF8101 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPCF8101 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 22 mΩ (標準)


    Original     		PDF TPCF8101 2A101 TPCF8101

    TPCF8102

    Abstract: No abstract text available
    Text: TPCF8102 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPCF8102 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 24 mΩ (標準)


    Original     		PDF TPCF8102 TPCF8102

    MCV MOSFET

    Abstract: TPCF8A01
    Text: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)


    Original     		PDF TPCF8A01 MCV MOSFET TPCF8A01

    TPCF8402

    Abstract: No abstract text available
    Text: TPCF8402 シリコンP,NチャネルMOS形 U-MOS IV / U-MOS III 東芝電界効果トランジスタ TPCF8402 ○ 携帯電子機器用 単位: mm ○ モータドライブ用 ○ ＤＣ－ＤＣコンバ－タ用 • 小型薄型で実装面積が小さい。


    Original     		PDF TPCF8402 20070701-JA TPCF8402

    TPCF8102

    Abstract: No abstract text available
    Text: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)


    Original     		PDF TPCF8102 TPCF8102

    TPCF8B01

    Abstract: No abstract text available
    Text: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8B01 TPCF8B01

    Untitled

    Abstract: No abstract text available
    Text: TPCF8305 MOSFETs Silicon P-Channel MOS U-MOS TPCF8305 1. Applications • Notebook PCs • Mobile Equipment 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.) (VGS = -4.5 V) (3)


    Original     		PDF TPCF8305

    TPCF8303

    Abstract: No abstract text available
    Text: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TPCF8303 TPCF8303

    TPCF8201

    Abstract: ta202
    Text: TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8201 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)


    Original     		PDF TPCF8201 TPCF8201 ta202

    47S marking code transistor

    Abstract: TPCF8103
    Text: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7S (typ.)


    Original     		PDF TPCF8103 47S marking code transistor TPCF8103

    toshiba f5b

    Abstract: TPCF8302 toshiba f5b data sheet
    Text: TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8302 TENTATIVE Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 44 mÙ (typ.) • High forward transfer admittance: |Yfs| = 6.2 S (typ.)


    Original     		PDF TPCF8302 toshiba f5b TPCF8302 toshiba f5b data sheet

    TPCF8102

    Abstract: A2430
    Text: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)


    Original     		PDF TPCF8102 TPCF8102 A2430

    Untitled

    Abstract: No abstract text available
    Text: TPCF8105 MOSFETs Silicon P-Channel MOS U-MOS TPCF8105 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = -4.5 V)


    Original     		PDF TPCF8105

    TPCF8306

    Abstract: No abstract text available
    Text: TPCF8306 MOSFETs Silicon P-Channel MOS U-MOS TPCF8306 1. Applications • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)


    Original     		PDF TPCF8306 TPCF8306

    Untitled

    Abstract: No abstract text available
    Text: TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8301 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8301

    Untitled

    Abstract: No abstract text available
    Text: TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8201 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)


    Original     		PDF TPCF8201

    TPCF8108

    Abstract: a2937
    Text: TPCF8108 MOSFET シリコンPチャネルMOS形 U-MOS TPCF8108 1. 用途 • リチウムイオン2次電池用 • パワーマネージメントスイッチ用 • ノートブックPC用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2)


    Original     		PDF TPCF8108 TPCF8108 a2937

    TPCF8B01

    Abstract: No abstract text available
    Text: TPCF8B01 東芝複合デバイス シリコンPチャネルMOS形 U-MOSIII ／ショットキバリア型 TPCF8B01 ○ ノートブック PC 用 単位: mm ○ 携帯電子機器用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。


    Original     		PDF TPCF8B01 -200A) TPCF8B01

    A6583

    Abstract: TPCF8305
    Text: TPCF8305 MOSFETs Silicon P-Channel MOS U-MOS TPCF8305 1. Applications • Notebook PCs • Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.) (VGS = -4.5 V) (3)


    Original     		PDF TPCF8305 A6583 TPCF8305

    TPCF8001

    Abstract: No abstract text available
    Text: TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8001 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 8 S (typ.)


    Original     		PDF TPCF8001 TPCF8001