j6 transistor
Abstract: transistor j6 marking J6 transistors marking J6
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to TP9015NND03
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Original
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PDF
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WBFBP-03B
WBFBP-03B
TP9014NND03
TP9015NND03
TP9014NND03
j6 transistor
transistor j6
marking J6 transistors
marking J6
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m6 marking transistor
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to TP9014NND03
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Original
|
PDF
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WBFBP-03B
TP9015NND03
WBFBP-03B
TP9014NND03
Vol45
-100A,
-100mA,
-10mA
m6 marking transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to TP9014NND03
|
Original
|
PDF
|
WBFBP-03B
TP9015NND03
WBFBP-03B
TP9014NND03
-100mA,
-10mA
-10mA
30MHz
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to TP9015NND03
|
Original
|
PDF
|
WBFBP-03B
WBFBP-03B
TP9014NND03
TP9015NND03
|