b0914
Abstract: No abstract text available
Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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Original
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TP2510
125pF
DSFP-TP2510
B091408
b0914
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PDF
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A110507
Abstract: tp5aw
Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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Original
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TP2510
125pF
TP2510
O-243AA
OT-89)
O-243,
DSFP-TP2510
A110507
A110507
tp5aw
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PDF
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tp5aw
Abstract: TP2510 TP2510N8-G TP2510ND
Text: TP2510 Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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Original
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TP2510
125pF
O-243,
A082307
tp5aw
TP2510
TP2510N8-G
TP2510ND
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PDF
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tp5aw
Abstract: TP5A Most TP2510 TP2510N8-G TP2510ND
Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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Original
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TP2510
125pF
DSFP-TP2510
B022309
tp5aw
TP5A
Most
TP2510
TP2510N8-G
TP2510ND
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PDF
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tp5aw
Abstract: No abstract text available
Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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Original
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TP2510
125pF
TP2510
O-243AA
OT-89)
O-243,
DSFP-TP2510
B122707
tp5aw
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PDF
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Untitled
Abstract: No abstract text available
Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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Original
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TP2510
125pF
DSFP-TP2510
B022309
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PDF
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TP2510 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown
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Original
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TP2510
125pF
DSFP-TP2510
C081413
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PDF
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