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    TP50N06V

    Abstract: MTP50N06V
    Text: MOTOROLA O rder this docum ent by M TP50N06V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP50N06V TM OSV™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


    OCR Scan     		PDF TP50N06V/D MTP50N06V/D TP50N06V MTP50N06V

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    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP50N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TP50N06V TMOS V™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


    OCR Scan     		PDF MTP50N06V/D MTP50N06V 21A-06